MMBT123S-7-F [DIODES]
1A NPN SURFACE MOUNT TRANSISTOR; 1A NPN表面贴装晶体管
| 型号： | MMBT123S-7-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 1A NPN SURFACE MOUNT TRANSISTOR |
| 文件： | 总3页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: MMBT123S
MMBT123S
Lead-free
1A NPN SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
High Collector Current Rating
SOT-23
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
Suitable as a low voltage high current driver
Lead Free/RoHS Compliant (Note 2)
C
B
B
C
C
TOP VIEW
E
B
D
Mechanical Data
D
G
E
E
·
·
Case: SOT-23
H
G
H
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
M
J
J
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
L
K
Terminals: Solderable per MIL-STD-202, Method 208
L
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
C
M
·
·
·
·
Terminal Connections: See Diagram
Marking (See Page 2): K6D
a
All Dimensions in mm
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
E
B
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
MMBT123S
Unit
V
Collector-Base Voltage
45
Collector-Emitter Voltage
18
V
Emitter-Base Voltage
5
V
Collector Current - Continuous
Power Dissipation (Note 1)
1
300
A
Pd
mW
°C/W
°C
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
417
Tj, TSTG
-55 to +150
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30292 Rev. 6 - 2
1 of 3
MMBT123S
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC = 100mA, IE = 0
IC = 1mA, IB = 0
E = 100mA, IC = 0
45
18
5
¾
¾
¾
1
V
V
I
V
VCB = 40V, IE = 0
VEB = 4V, IC = 0
¾
¾
mA
mA
IEBO
Emitter Cutoff Current
1
ON CHARACTERISTICS (Note 3)
DC Current Gain
IC = 100mA, VCE = 1V
IC = 300mA, IB = 30mA
hFE
150
800
0.5
¾
VCE(SAT)
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
¾
V
VCB = 10V, f = 1.0MHz, IE = 0
Cobo
fT
¾
8
pF
VCB = 10V, IE = 50mA,
f = 100MHz
Current Gain-Bandwidth Product
100
¾
MHz
Notes: 3. Short duration pulse test used to minimize self-heating effect.
(Note 4)
Ordering Information
Device
Packaging
Shipping
MMBT123S-7-F
SOT-23
3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K6D = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
K6D
M = Month ex: 9 = September
Date Code Key
Year
Code
2002
2003
2004
2005
2006
2007
2008
2009
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30292 Rev. 6 - 2
2 of 3
MMBT123S
www.diodes.com
1000
100
1
350
300
250
200
150
100
50
0
VCE = 1.0V
200
0
175
25
50
150
75 100 125
0.0001
.001
.01
.1
1
10
TA, AMBIENT TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
Fig. 2, Typical DC Current Gain vs
Collector Current
100
1000
f = 1MHz
100
10
10
1
1
0.0001
1
0.1
100
10
10
.001
.01
.1
1
VCB, COLLECTOR-BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Fig. 3, Output Capacitance vs.
Collector-Base Voltage
Fig. 4, Collector Saturation Voltage vs
Collector Current
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30292 Rev. 6 - 2
3 of 3
MMBT123S
www.diodes.com
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