MMBT4124-7-F [DIODES]

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管
MMBT4124-7-F
型号: MMBT4124-7-F
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
NPN小信号表面贴装晶体管

晶体 小信号双极晶体管 开关 光电二极管
文件: 总3页 (文件大小:70K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBT4124  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
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Features  
Mechanical Data  
Epitaxial Planar Die Construction  
Case: SOT-23  
Complementary PNP Type Available (MMBT4126)  
Ideal for Medium Power Amplification and Switching  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 2 and 4)  
Case Material: Molded Plastic, “Green” Molding Compound,  
Note 4. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating) Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
C
E
B
Top View  
Device Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
30  
Unit  
V
Collector-Emitter Voltage  
25  
V
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous (Note 1)  
200  
mA  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 1)  
Symbol  
Value  
300  
Unit  
mW  
PD  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
417  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 3)  
Symbol  
Min  
Max  
Unit  
Test Condition  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
30  
25  
5.0  
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
50  
50  
IC = 10μA, IE = 0  
IC = 1.0mA, IB = 0  
IE = 10μA, IC = 0  
VCB = 20V, IE = 0V  
VEB = 3.0V, IC = 0V  
V
nA  
nA  
Emitter Cutoff Current  
IEBO  
ON CHARACTERISTICS (Note 3)  
360  
0.30  
0.95  
IC = 2.0mA, VCE = 1.0V  
IC = 50mA, VCE = 1.0V  
IC = 50mA, IB = 5.0mA  
IC = 50mA, IB = 5.0mA  
120  
60  
DC Current Gain  
hFE  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
V
V
VCE(SAT)  
VBE(SAT)  
4.0  
8.0  
pF  
pF  
Cobo  
Cibo  
VCB = 5.0V, f = 1.0MHz, IE = 0  
VEB = 0.5V, f = 1.0MHz, IC = 0  
Input Capacitance  
VCE = 1.0V, IC = 2.0mA,  
f = 1.0kHz  
Small Signal Current Gain  
120  
480  
hfe  
fT  
VCE = 20V, IC = 10mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
300  
MHz  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead. Halogen and Antimony Free.  
3. Short duration pulse test used to minimize self-heating effect.  
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 3  
www.diodes.com  
January 2009  
© Diodes Incorporated  
MMBT4124  
Document number: DS30105 Rev. 11 - 2  
MMBT4124  
1,000  
400  
350  
300  
250  
100  
10  
200  
150  
100  
R
= 417°C/W  
θJA  
50  
0
1
200  
0
175  
TA, AMBIENT TEMPERATURE (°C)  
25  
50  
150  
100 125  
75  
1
0.1  
10  
100  
1,000  
IC, COLLECTOR CURRENT (mA)  
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)  
Fig. 2 Typical DC Current Gain vs. Collector Current  
1
10  
IC  
IB  
I
C
= 10  
= 10  
I
B
1
0.1  
0.01  
0.1  
0.1  
1
10  
1,000  
100  
0.1  
1
10  
1,000  
100  
IC, COLLECTOR CURRENT (mA)  
IC, COLLECTOR CURRENT (mA)  
Fig. 4 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
Fig. 3 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
15  
10  
5
f = 1MHz  
C
ibo  
C
obo  
0
0.1  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
Fig. 5 Typical Capacitance Characteristics  
2 of 3  
www.diodes.com  
January 2009  
© Diodes Incorporated  
MMBT4124  
Document number: DS30105 Rev. 11 - 2  
MMBT4124  
Ordering Information (Note 5)  
Part Number  
MMBT4124-7-F  
Case  
SOT-23  
Packaging  
3000/Tape & Reel  
Notes:  
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K1B = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: N = 2002)  
K1B  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015  
Code  
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
A
B
C
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
Package Outline Dimensions  
A
SOT-23  
Dim  
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013 0.10  
0.903 1.10  
-
0.45  
0.085 0.18  
0° 8°  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
0.40  
1.30  
2.40  
A
B
C
D
F
G
H
J
K
K1  
L
M
α
C
B
2.05  
3.00  
1.83  
2.90  
0.05  
1.00  
0.400  
0.55  
0.11  
-
H
M
K
K1  
-
D
F
J
0.61  
L
G
All Dimensions in mm  
Suggested Pad Layout  
Y
Dimensions Value (in mm)  
Z
X
Y
C
E
2.9  
0.8  
0.9  
2.0  
1.35  
Z
C
E
X
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
3 of 3  
www.diodes.com  
January 2009  
© Diodes Incorporated  
MMBT4124  
Document number: DS30105 Rev. 11 - 2  

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