MMBT4124LT1 [ONSEMI]
20 V NPN 双极晶体管;
| 型号： | MMBT4124LT1 |
| 厂家： | 
ONSEMI |
| 描述： | 20 V NPN 双极晶体管 小信号双极晶体管 |
| 文件： | 总5页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT4124LT1G
General Purpose Transistor
NPN Silicon
Features
http://onsemi.com
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
1
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
25
Unit
Vdc
BASE
V
CEO
V
CBO
30
Vdc
2
V
EBO
5.0
Vdc
EMITTER
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
200
mAdc
C
3
Symbol
Max
Unit
Total Device Dissipation
P
D
1
FR−5 Board (Note 1) @T = 25°C
225
1.8
W
mW/°C
A
2
Derate above 25°C
SOT−23 (TO−236)
CASE 318
Thermal Resistance, Junction−to−Ambient
R
ꢀ
JA
556
°C/W
STYLE 6
Total Device Dissipation Alumina
P
D
Substrate (Note 2) @T = 25°C
300
2.4
W
A
Derate above 25°C
mW/°C
MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
ꢀ
417
°C/W
°C
JA
T , T
J
−55 to +150
stg
ZC M G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
RecommendedOperating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
G
ZC = Device Code
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
dependingupon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
3000 / Tape & Reel
MMBT4124LT1G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 2
MMBT4124LT1/D
MMBT4124LT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 3)
V
25
30
5.0
−
−
−
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
C
E
Collector−Base Breakdown Voltage
(I = 10 ꢁ Adc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 10 ꢁ Adc, I = 0)
−
Vdc
E
C
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
I
50
50
nAdc
nAdc
CBO
EBO
CB
E
Emitter Cutoff Current
(V = 3.0 Vdc, I = 0)
−
EB
C
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
−
(I = 2.0 mAdc, V = 1.0 Vdc)
120
60
360
−
C
CE
(I = 50 mAdc, V = 1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = 50 mAdc, I = 5.0 mAdc)
V
−
0.3
Vdc
Vdc
CE(sat)
C
B
Base−Emitter Saturation Voltage (Note 3)
(I = 50 mAdc, I = 5.0 mAdc)
V
−
0.95
BE(sat)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
300
−
−
MHz
pF
pF
−
T
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
C
CE
Input Capacitance
C
ibo
8.0
4.0
480
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
EB
C
Collector−Base Capacitance
(I = 0, V = 5.0 V, f = 1.0 MHz)
C
h
−
cb
E
CB
Small−Signal Current Gain
(I = 2.0 mAdc, V = 10 Vdc, R = 10 k ꢂ, f = 1.0 kHz)
120
fe
C
CE
S
Current Gain − High Frequency
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
|h |
fe
−
3.0
120
−
480
C
CE
(I = 2.0 mAdc, V = 10 V, f = 1.0 kHz)
C
CE
Noise Figure
NF
−
5.0
dB
(I = 100 ꢁ Adc, V = 5.0 Vdc, R = 1.0 k ꢂ, f = 1.0 kHz)
C
CE
S
3. Pulse Test: Pulse Width = 300 ꢁ s, Duty Cycle = 2.0%.
200
100
10
7.0
t
s
5.0
70
50
t
d
C
ibo
30
20
3.0
2.0
t
f
t
r
C
obo
V
= 3 V
CC
10.0
I /I = 10
C B
V
= 0.5 V
EB(off)
7.0
5.0
1.0
30 40
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 1. Capacitance
Figure 2. Switching Times
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2
MMBT4124LT1G
AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
(VCE = 5 Vdc, TA = 25°C)
Bandwidth = 1.0 Hz
12
10
14
f = 1 kHz
SOURCE RESISTANCE = 200 ꢂ
= 1 mA
I
= 1 mA
C
12
10
8
I
C
I
= 0.5 mA
C
SOURCE RESISTANCE = 200 ꢂ
= 0.5 mA
8
6
4
2
0
I
= 50 ꢁ A
C
I
C
I
= 100 ꢁ A
SOURCE RESISTANCE = 1 kꢂ
= 50 ꢁ A
C
6
I
C
4
SOURCE RESISTANCE = 500 ꢂ
= 100 ꢁ A
2
I
C
0
0.1 0.2
0.4
1
2
4
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (kꢂ)
S
Figure 3. Frequency Variations
Figure 4. Source Resistance
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)
300
200
100
50
20
10
5
100
70
50
30
2
1
5.0
10
5.0
10
0.1
0.2
0.5
1.0
2.0
0.1
0.2
0.5
1.0
2.0
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Current Gain
Figure 6. Output Admittance
10
7.0
5.0
20
10
5.0
2.0
3.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2
0.5
1.0
2.0
5.0
10
0.1
0.2
0.5
1.0
2.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. Input Impedance
Figure 8. Voltage Feedback Ratio
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3
MMBT4124LT1G
STATIC CHARACTERISTICS
2.0
1.0
T = +125°C
J
V
CE
= 1 V
+25°C
-ꢀ55°C
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I , COLLECTOR CURRENT (mA)
C
Figure 9. DC Current Gain
1.0
0.8
0.6
0.4
0.2
T = 25°C
J
30 mA
100 mA
I
= 1 mA
10 mA
C
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 10. Collector Saturation Region
1.2
1.0
1.0
T = 25°C
J
V
@ I /I = 10
C B
0.5
0
BE(sat)
+25°C to +125°C
-ꢀ55°C to +25°C
ꢀ
for V
CE(sat)
VC
0.8
V
BE
@ V = 1 V
CE
-ꢀ0.5
-ꢀ1.0
-ꢀ1.5
-ꢀ2.0
0.6
0.4
0.2
0
-ꢀ55°C to +25°C
+25°C to +125°C
V
@ I /I = 10
C B
CE(sat)
ꢀ
for V
BE(sat)
VB
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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4
MMBT4124LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
b
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
2.10
2.40
2.64
0.083
0.094
0.104
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
ǒinches
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
MountingTechniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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MMBT4124LT1/D
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