MMBT5551 [DIODES]
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管
| 型号： | MMBT5551 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5551
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMBT5401)
Ideal for Medium Power Amplification and
Switching
SOT-23
A
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
C
·
B
C
B
TOP VIEW
B
E
C
Mechanical Data
·
D
G
E
D
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K4N
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
H
E
·
G
H
K
M
J
·
·
L
J
C
K
·
·
·
·
L
M
a
E
B
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Symbol
Maximum Ratings
Characteristic
MMBT5551
180
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
160
V
Emitter-Base Voltage
6.0
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
200
mA
mW
°C/W
°C
Pd
300
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
417
-55 to +150
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC = 100mA, IE = 0
IC = 1.0mA, IB = 0
IE = 10mA, IC = 0
180
160
6.0
¾
¾
¾
V
V
V
V
V
CB = 120V, IE = 0
nA
ICBO
IEBO
Collector Cutoff Current
¾
¾
50
50
CB = 120V, IE = 0, TA = 100°C
mA
VEB = 4.0V, IC = 0
Emitter Cutoff Current
nA
ON CHARACTERISTICS (Note 2)
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
80
80
30
¾
250
¾
hFE
DC Current Gain
¾
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.15
0.20
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
¾
¾
V
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
1.0
SMALL SIGNAL CHARACTERISTICS
VCB = 10V, f = 1.0MHz, IE = 0
Cobo
hfe
Output Capacitance
¾
6.0
pF
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
50
250
¾
V
CE = 10V, IC = 10mA,
fT
100
300
8.0
MHz
dB
f = 100MHz
V
CE = 5.0V, IC = 200mA,
NF
¾
RS = 1.0kW, f = 1.0kHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30061 Rev. 4 - 2
1 of 2
MMBT5551
www.diodes.com
(Note 3)
Ordering Information
Device
Packaging
Shipping
MMBT5551-7
SOT-23
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K4N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K4N
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30061 Rev. 4 - 2
2 of 2
MMBT5551
www.diodes.com
相关型号：
MMBT5551-13
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES
MMBT5551-B-AE3-R
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
UTC
©2020 ICPDF网 联系我们和版权申明