MMBT5551-C-AE3-B-R [UTC]

HIGH VOLTAGE SWITCHING TRANSISTOR; 高电压开关晶体管


型号：	MMBT5551-C-AE3-B-R
厂家：	Unisonic Technologies
描述：	HIGH VOLTAGE SWITCHING TRANSISTOR 高电压开关晶体管晶体开关晶体管高压
文件：	总4页 (文件大小：51K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MMBT5551

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING

TRANSISTOR

ꢀ FEATURES

* High Collector-Emitter Voltage:

V_CEO=160V

* High current gain

SOT-23

*Pb-free plating product number:MMBT5551L

ꢀ ORDERING INFORMATION

Order Number

Pin Assignment

Package

Packing

Normal

Lead Free Plating

MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R SOT-23

Tape Reel

MMBT5551L-x-AE3-6-R

(1)Packing Type

(2)Pin Assignment

(3)Package Type

(4)Rank

(1) R: Tape Reel

(2) refer to Pin Assignment

(3) AE3: SOT-23

(4) x: refer to Classification of h_FE

(5) L: Lead Free Plating, Blank: Pb/Sn

(5)Lead Plating

ꢀ

MARKING

www.unisonic.com.tw

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MMBT5551

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

PARAMETER

Collector -Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

180

UNIT

Collector -Emitter Voltage

Emitter -Base Voltage

160

DC Collector Current

600

℃

Power Dissipation

P_D

350

Operating and Storage Junction Temperature

T_J,T_STG

-55 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

TEST CONDITIONS

I_C=100µA, I_E=0

I_C=1mA, I_B=0

MIN

180

160

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I_E=10µA, I_C=0

V_CB=120V, I_E=0

V_BE=4V, I_C=0

V_CE=5V, I_C=1mA

I_CBO

Emitter Cut-off Current

I_EBO

DC Current Gain(note)

h_FE

_CE=5V, I_C=10mA

_CE=5V, I_C=50mA

160

400

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

0.15

0.2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE(SAT)

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

V_BE(SAT)

Current Gain Bandwidth Product

Output Capacitance

f_T

V_CE=10V, I_C=10mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

I_C=0.25mA, V_CE=5V

R_S=1kΩ, f=10Hz ~ 15.7kHz

100

300

6.0

MHz

C_ob

Noise Figure

N_F

Note: Pulse test: PW<300µs, Duty Cycle<2%

ꢀ

CLASSIFICATION OF h_FE

RANK

RANGE

80-170

150-240

200-400

UNISONIC TECHNOLOGIES CO., LTD

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MMBT5551

■ TYPICAL CHARACTERICS

NPN EPITAXIAL SILICON TRANSISTOR

Fig.1 Collector Output Capacitance

Fig.2 DC Current Gain

VCE=5V

f=1MHz

IE=0

-1

Collector-Base Voltage (V)

Fig.3 Base-Emitter on Voltage

Collector Current, Ic (mA)

Fig.4 Saturation Voltage

Ic=10*I

VCE=5V

VBE(SAT)

-1

VCE(SAT)

-2

-1

0.2

0.4

0.6

0.8

1.0

Base-Emitter Voltage (V)

Collector Current, Ic (mA)

Fig.5 Current Gain-Bandwidth

Product

VCE=10V

Collector Current, Ic (mA)

UNISONIC TECHNOLOGIES CO., LTD

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MMBT5551

NPN EPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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