MMBTA42 [DIODES]

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管


型号：	MMBTA42
厂家：	DIODES INCORPORATED
描述：	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NPN小信号表面贴装晶体管晶体晶体管光电二极管放大器 PC
文件：	总2页 (文件大小：49K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMBTA42

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

SOT-23

Epitaxial Planar Die Construction

Complementary PNP Type Available

(MMBTA92)

Ideal for Medium Power Amplification and

Switching

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

TOP VIEW

Mechanical Data

Case: SOT-23, Molded Plastic

Case Material - UL Flammability Rating 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

Marking (See Page 2): K3M

Ordering & Date Code Information: See Page 2

Weight: 0.008 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Symbol

Maximum Ratings

Characteristic

MMBTA42

300

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

300

Emitter-Base Voltage

6.0

Collector Current (Note 1) (Note 3)

Power Dissipation (Note 1)

500

K/W

°C

P_d

300

R_qJA

T_j, T_STG

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

417

-55 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Symbol

Min

Max

Unit

Test Condition

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= 100mA, I_E= 0

I_C= 1.0mA, I_B= 0

_E= 100mA, I_C= 0

300

6.0

V_CB= 200V, I_E= 0

V_CE= 6.0V, I_C= 0

100

I_EBO

Collector Cutoff Current

ON CHARACTERISTICS (Note 2)

I_C= 1.0mA, V_CE= 10V

I_C

10mA, V_CE= 10V

30mA, V_CE= 10V

h_FE

DC Current Gain

I_C= 20mA, I_B= 2.0mA

V_CE(SAT)

V_BE(SAT)

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

0.5

0.9

V_CB= 20V, f = 1.0MHz, I_E= 0

C_cb

f_T

3.0

V_CE= 20V, I_C= 10mA,

f = 100MHz

Current Gain-Bandwidth Product

MHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance

rating (R_qJA), power dissipation rating (P_d) and power derating curve (figure 1).

DS30062 Rev. 4 - 2

1 of 2

MMBTA42

Ordering Information

(Note 4)

Device

Packaging

Shipping

MMBTA42-7

SOT-23

3000/Tape & Reel

Notes:

4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

K3M = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: N = 2002

M = Month ex: 9 = September

K3M

Date Code Key

Year

1998

1999

2000

2001

2002

2003

2004

2005

2006

2007

2008

2009

Code

Month

Code

Jan

Feb

March

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

350

300

250

200

150

100

200

175

150

75 100 125

T_A, AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs

Ambient Temperature

DS30062 Rev. 4 - 2

2 of 2

MMBTA42

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