MMST3904 [DIODES]
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管
| 型号： | MMST3904 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMST3904
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMST3906)
SOT-323
Dim
A
Min
0.30
1.15
2.00
Max
0.40
1.35
2.20
A
·
Ultra-Small Surface Mount Package
C
B
C
TOP VIEW
B
C
D
0.65 Nominal
B
E
Mechanical Data
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.25
D
G
E
G
H
·
·
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
H
J
M
K
·
·
·
Terminal Connections: See Diagram
Marking: K2N
Weight: 0.006 grams (approx.)
K
0.90
0.25
0.10
J
L
L
M
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Symbol
Maximum Ratings
Characteristic
MMST3904
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
60
40
V
6.0
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
200
mA
mW
K/W
°C
Pd
200
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
625
-55 to +150
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30082 Rev. 3P-1
1 of 2
MMST3904
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IC = 10mA, IE = 0
60
40
5.0
¾
¾
¾
¾
50
50
V
V
IC = 1.0mA, IB = 0
IE = 10mA, IC = 0
V
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
nA
nA
IBL
Base Cutoff Current
¾
ON CHARACTERISTICS (Note 2)
I
C = 100µA, VCE = 1.0V
C = 1.0mA, VCE = 1.0V
40
70
¾
¾
300
¾
I
IC
IC
I
=
=
10mA, VCE = 1.0V
50mA, VCE = 1.0V
hFE
DC Current Gain
100
60
¾
C = 100mA, VCE = 1.0V
30
¾
IC = 10mA, IB = 1.0mA
C = 50mA, IB = 5.0mA
0.25
0.30
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
¾
V
V
I
IC = 10mA, IB = 1.0mA
C = 50mA, IB = 5.0mA
0.65
¾
0.85
0.95
I
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
Cobo
Cibo
hie
¾
¾
4.0
8.0
10
pF
pF
Input Capacitance
Input Impedance
1.0
0.5
100
1.0
kW
x 10-4
hre
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
8.0
400
40
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
hfe
¾
hoe
mS
VCE = 20V, IC = 10mA,
f = 100MHz
fT
Current Gain-Bandwidth Product
Noise Figure
300
¾
MHz
dB
VCE = 5.0V, IC = 100mA,
RS = 1.0kW, f = 1.0kHz
NF
¾
5.0
SWITCHING CHARACTERISTICS
Delay Time
td
tr
¾
¾
35
35
ns
ns
VCC = 3.0V, IC = 10mA,
V
BE(off) = - 0.5V, IB1 = 1.0mA
Rise Time
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30082 Rev. 3P-1
2 of 2
MMST3904
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