MMST4124_09 [DIODES]

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管


型号：	MMST4124_09
厂家：	DIODES INCORPORATED
描述：	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NPN小信号表面贴装晶体管晶体晶体管
文件：	总3页 (文件大小：71K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMST4124

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Features

Mechanical Data

•

Epitaxial Planar Die Construction

•

Case: SOT-323

Case Material: Molded Plastic, "Green" Molding Compound,

Note 4. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminal Connections: See Diagram

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating) Solderable per MIL-STD-202, Method 208

Complementary PNP Type Available (MMST4126)

Ideal for Medium Power Amplification and Switching

Ultra-Small Surface Mount Package

Lead Free/RoHS Compliant (Note 2)

"Green" Device (Notes 3 and 4)

•

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.006 grams (approximate)

Top View

Device Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous (Note 1)

200

Thermal Characteristics

Characteristic

Power Dissipation (Note 1)

Symbol

Value

200

Unit

^οC/W

P_D

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

625

R_θ

-55 to +150

T_J, T_STG

°C

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Symbol

Min

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

5.0

⎯

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

⎯

I_C= 10μA, I_E= 0

I_C= 1.0mA, I_B= 0

I_E= 10μA, I_C= 0

V_CB= 20V, I_E= 0V

V_EB= 3.0V, I_C= 0V

Emitter Cutoff Current

I_EBO

⎯

ON CHARACTERISTICS (Note 5)

360

⎯

0.30

0.95

I_C= 2.0mA, V_CE= 1.0V

I_C= 50mA, V_CE= 1.0V

I_C= 50mA, I_B= 5.0mA

120

DC Current Gain

h_FE

⎯

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

V_CE(SAT)

V_BE(SAT)

⎯

4.0

8.0

C_obo

C_ibo

⎯

V_CB= 5.0V, f = 1.0MHz, I_E= 0

V_EB= 0.5V, f = 1.0MHz, I_C= 0

Input Capacitance

V_CE= 1.0V, I_C= 2.0mA,

f = 1.0kHz

Small Signal Current Gain

120

480

h_fe

f_T

⎯

V_CE= 20V, I_C= 10mA,

f = 100MHz

Current Gain-Bandwidth Product

300

MHz

⎯

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

5. Short duration pulse test used to minimize self-heating effect.

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www.diodes.com

January 2009

MMST4124

Document number: DS30163 Rev. 9 - 2

MMST4124

1,000

400

350

300

250

100

200

150

100

200

175

150

0.1

100 125

100

1,000

I_C, COLLECTOR CURRENT (mA)

T_A, AMBIENT TEMPERATURE (°C)

Fig. 2 Typical DC Current Gain vs.

Collector Current

Fig. 1 Power Dissipation vs.

Ambient Temperature (Note 1)

0.1

0.01

0.1

1,000

100

0.1

1,000

100

I_C, COLLECTOR CURRENT (mA)

Fig. 4 Typical Base-Emitter Saturation Voltage

vs. Collector Current

Fig. 3 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

f = 1MHz

ibo

obo

0.1

100

V_R, REVERSE VOLTAGE (V)

Fig. 5 Typical Capacitance Characteristics

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www.diodes.com

January 2009

MMST4124

Document number: DS30163 Rev. 9 - 2

MMST4124

Ordering Information (Notes 4 and 6)

Part Number

MMST4124-7-F

Case

SOT-323

Packaging

3000/Tape & Reel

Notes:

6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

K1B = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: N = 2002)

K1B

M = Month (ex: 9 = September)

Date Code Key

Year

1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Package Outline Dimensions

SOT-323

Dim

Min

0.25

1.15

2.00

1.20

1.80

0.0

0.90

0.25

0.10

0°

Max

0.40

1.35

2.20

1.40

2.20

0.10

1.00

0.40

0.18

8°

Typ

0.30

1.30

2.10

0.65

1.30

2.15

0.05

1.00

0.30

0.11

All Dimensions in mm

Suggested Pad Layout

Dimensions Value (in mm)

2.8

0.7

0.9

1.9

1.0

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product

described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall

assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,

harmless against all damages.

LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written

approval of the President of Diodes Incorporated.

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January 2009

MMST4124

Document number: DS30163 Rev. 9 - 2

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