MMST5401-7 [DIODES]

Small Signal Bipolar Transistor, 0.2A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3;


型号：	MMST5401-7
厂家：	DIODES INCORPORATED
描述：	Small Signal Bipolar Transistor, 0.2A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3 晶体小信号双极晶体管开关光电二极管 PC
文件：	总4页 (文件大小：126K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMST5401

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

SOT-323

Min

Complementary NPN Type Available (MMST5551)

Ideal for Low Power Amplification and Switching

Ultra-Small Surface Mount Package

Lead Free/RoHS Compliant (Note 2)

"Green" Device (Note 3 and 4)

Dim

Max

0.40

1.35

2.20

0.25

1.15

2.00

0.65 Nominal

Mechanical Data

0.30

1.20

1.80

0.0

0.40

1.40

2.20

0.10

1.00

0.40

0.18

8°

•

Case: SOT-323

Case Material: Molded Plastic, "Green" Molding

Compound, Note 4. UL Flammability Classification

Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminal Connections: See Diagram

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

•

0.90

0.25

0.10

0°

•

Marking Information: K4M, See Page 4

Ordering & Date Code Information: See Page 4

Weight: 0.006 grams (approximate)

All Dimensions in mm

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-160

-150

-5.0

-200

200

Unit

°C/W

P_d

Thermal Resistance, Junction to Ambient (Note 1)

625

R_θ

Operating and Storage Temperature Range

-55 to +150

T_j, T_STG

°C

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

MMST5401

DS30170 Rev. 9 - 2

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www.diodes.com

Electrical Characteristics ^@T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Symbol

Min

Max

Unit

Test Condition

I_C= -100μA, I_E= 0

I_C= -1.0mA, I_B= 0

I_E= -10μA, I_C= 0

-160

-150

-5.0

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

⎯

μA

V_CB= -120V, I_E= 0

V_CB= -120V, I_E= 0, T_A= 100°C

V_EB= -3.0V, I_C= 0

Collector Cutoff Current

-50

I_CBO

I_EBO

⎯

Emitter Cutoff Current

ON CHARACTERISTICS (Note 5)

I_C= -1.0mA, V_CE= -5.0V

⎯

240

⎯

DC Current Gain

h_FE

⎯

I_C

-10mA, V_CE= -5.0V

-50mA, V_CE= -5.0V

I_C= -10mA, I_B= -1.0mA

I_C= -50mA, I_B= -5.0mA

I_C= -10mA, I_B= -1.0mA

I_C= -50mA, I_B= -5.0mA

-0.2

-0.5

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE(SAT)

V_BE(SAT)

⎯

-1.0

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

6.0

200

300

8.0

⎯

C_obo

h_fe

f_T

⎯

V_CB= -10V, f = 1.0MHz, I_E= 0

V_CE= -10V, I_C= -1.0mA,

f = 1.0kHz

V_CE= -10V, I_C= -10mA, f = 100MHz

V_CE= -5.0V, I_C= -200μA,

R_S= 10Ω, f = 1.0kHz

Small Signal Current Gain

Current Gain-Bandwidth Product

Noise Figure

100

MHz

⎯

Notes:

5. Short duration pulse test used to minimize self-heating effect.

200

10.0

1.0

Note 1

150

100

0.1

0.01

200

175

150

75 100 125

100

1,000

I_C, COLLECTOR CURRENT (mA)

T_A, AMBIENT TEMPERATURE (°C)

Fig. 2, Collector Emitter Saturation Voltage

vs. Collector Current

Fig. 1, Max Power Dissipation vs.

Ambient Temperature

MMST5401

DS30170 Rev. 9 - 2

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www.diodes.com

1.0

0.9

0.8

10,000

1,000

100

= 5V

= -50°C

= 150°C

0.7

0.6

= 25°C

0.5

0.4

= 25°C

= 150°C

= -50°C

0.3

0.2

0.1

100

1,000

0.1

1.0

I_C, COLLECTOR CURRENT (mA)

Fig. 4, Base Emitter Voltage vs. Collector Current

100

I_C, COLLECTOR CURRENT (mA)

Fig. 3, DC Current Gain vs. Collector Current

1,000

100

= 10V

100

I_C, COLLECTOR CURRENT (mA)

Fig. 5, Gain Bandwidth Product vs. Collector Current

MMST5401

DS30170 Rev. 9 - 2

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www.diodes.com

Ordering Information (Notes 4 and 6)

Packaging

Shipping

Device

SOT-323

3000/Tape & Reel

MMST5401-7-F

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

K4M = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: N = 2002

M = Month ex: 9 = September

K4M

Date Code Key

Year

1998

1999

2000

2001

2002

2003

2004 2005

2006

2007

2008

2009

2010

2011

2012

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product

described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall

assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,

harmless against all damages.

LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written

approval of the President of Diodes Incorporated.

MMST5401

DS30170 Rev. 9 - 2

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www.diodes.com

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