MMST5401 [DIODES]
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; PNP小信号表面贴装晶体管
| 型号： | MMST5401 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMST5401
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMST5551)
Ideal for Medium Power Amplification and
Switching
Ultra-Small Surface Mount Package
SOT-323
Dim
A
Min
0.30
1.15
2.00
Max
0.40
1.35
2.20
A
·
·
C
B
C
TOP VIEW
B
C
D
0.65 Nominal
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.25
Mechanical Data
B
E
G
H
D
G
E
·
·
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
H
J
M
·
·
·
Terminal Connections: See Diagram
Marking: K4M
Weight: 0.006 grams (approx.)
K
0.90
0.25
0.10
K
L
J
L
M
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Symbol
Maximum Ratings
Characteristic
MMST5401
-160
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-150
V
-5.0
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
-200
mA
mW
K/W
°C
Pd
200
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
625
-55 to +150
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30170 Rev. B-1
1 of 2
MMST5401
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
IC = -100mA, IE = 0
C = -1.0mA, IB = 0
V(BR)CBO
V(BR)CEO
V(BR)EBO
-160
-150
-5.0
¾
¾
¾
V
V
V
I
IE = -10mA, IC = 0
VCB = -120V, IE = 0
nA
ICBO
IEBO
Collector Cutoff Current
¾
¾
-50
-50
V
CB = -120V, IE = 0, TA = 100°C
mA
VEB = -3.0V, IC = 0
Emitter Cutoff Current
nA
ON CHARACTERISTICS (Note 2)
I
IC
IC
C = -1.0mA, VCE = -5.0V
50
60
50
¾
240
¾
=
=
-10mA, VCE = -5.0V
-50mA, VCE = -5.0V
hFE
DC Current Gain
¾
IC = -10mA, IB = -1.0mA
C = -50mA, IB = -5.0mA
-0.2
-0.5
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
¾
¾
V
V
I
IC = -10mA, IB = -1.0mA
C = -50mA, IB = -5.0mA
-1.0
I
SMALL SIGNAL CHARACTERISTICS
VCB = -10V, f = 1.0MHz, IE = 0
Cobo
hfe
Output Capacitance
¾
6.0
pF
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
40
200
¾
VCE = -10V, IC = -10mA,
f = 100MHz
fT
100
300
8.0
MHz
dB
VCE = -5.0V, IC = -200mA,
RS = 10W, f = 1.0kHz
NF
¾
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30170 Rev. B-1
2 of 2
MMST5401
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