MMST5551-13 [DIODES]
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3;
| 型号： | MMST5551-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: MMST5551
MMST5551
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
SOT-323
Complementary PNP Type Available
(MMST5401)
A
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
C
·
·
·
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
B
C
B
Available in Lead Free/RoHS Compliant Version (Note 2)
C
B
E
D
0.65 Nominal
G
H
Mechanical Data
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
G
H
K
J
·
·
Case: SOT-323
M
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
J
L
D
E
K
0.90
0.25
0.10
0°
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
L
C
M
Terminals: Solderable per MIL-STD-202, Method 208
a
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please See Ordering
Information, Note 5, on Page 2
All Dimensions in mm
E
B
·
·
·
Marking (See Page 2) : K4N
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
V
Collector-Base Voltage
180
160
Collector-Emitter Voltage
V
Emitter-Base Voltage
6.0
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
200
mA
mW
°C/W
°C
Pd
200
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
625
Tj, TSTG
-55 to +150
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30173 Rev. 5 - 2
1 of 3
MMST5551
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC = 100mA, IE = 0
180
160
6.0
¾
¾
¾
V
V
V
IC = 1.0mA, IB = 0
IE = 10mA, IC = 0
V
CB = 120V, IE = 0
nA
ICBO
IEBO
Collector Cutoff Current
¾
¾
50
50
VCB = 120V, IE = 0, TA = 100°C
mA
VEB = 4.0V, IC = 0
Emitter Cutoff Current
nA
ON CHARACTERISTICS (Note 3)
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
80
80
30
¾
250
¾
hFE
DC Current Gain
¾
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.15
0.20
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
¾
¾
V
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
1.0
SMALL SIGNAL CHARACTERISTICS
VCB = 10V, f = 1.0MHz, IE = 0
Cobo
hfe
Output Capacitance
¾
6.0
pF
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
50
250
¾
VCE = 10V, IC = 10mA,
f = 100MHz
fT
100
300
8.0
MHz
dB
V
CE = 5.0V, IC = 200mA,
NF
¾
RS = 1.0kW, f = 1.0kHz
(Note 4 & 5)
Ordering Information
Device
Packaging
Shipping
MMST5551-7
SOT-323
3000/Tape & Reel
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST5551-7-F.
Marking Information
K4N= Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K4N
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30173 Rev. 5 - 2
2 of 3
MMST5551
www.diodes.com
200
150
0.15
0.14
0.13
0.12
0.11
0.10
I
C = 10
IB
TA = 150°C
100
50
0
0.09
0.08
0.07
0.06
TA = 25°C
0.05
0.04
TA = -50°C
200
0
175
25
50
150
75 100 125
1
100
10
1000
TA, AMBIENT TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
1000
1.0
0.9
VCE = 5V
VCE = 5V
TA = -50°C
TA = 150°C
0.8
0.7
100
10
1
TA = 25°C
TA = 25°C
0.6
TA = -50°C
0.5
0.4
TA = 150°C
0.3
0.2
0.1
10
1
100
100
10
1
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs
Collector Current
Fig. 4, Base Emitter Voltage
vs. Collector Current
1000
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current
DS30173 Rev. 5 - 2
3 of 3
www.diodes.com
MMST5551
相关型号：
MMST5551-TP-HF
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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