SBG2035CT [DIODES]

20A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 20A表面贴装肖特基整流器
SBG2035CT
型号: SBG2035CT
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

20A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
20A表面贴装肖特基整流器

整流二极管 瞄准线 功效
文件: 总2页 (文件大小:46K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SBG2030CT - SBG2045CT  
20A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
E
D2PAK  
Min  
Max  
10.69  
15.88  
1.14  
2.79  
4.83  
1.40  
1.40  
9.25  
0.64  
2.92  
2.79  
Dim  
A
G
H
A
9.65  
14.60  
0.51  
2.29  
4.37  
1.14  
1.14  
8.25  
0.30  
2.03  
2.29  
4
Surge Overload Rating to 225A Peak  
B
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
C
J
B
D
1
2
3
E
G
H
M
Mechanical Data  
D
K
J
Case: D2PAK Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagram  
Marking: Type Number  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
C
L
K
L
PIN 1  
PIN 3  
PIN 2 & 4  
M
All Dimensions in mm  
@ TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SBG  
2030CT  
SBG  
2040CT  
SBG  
2045CT  
SBG  
2035CT  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
25  
40  
28  
45  
32  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
V
A
Average Rectified Output Current  
@ TC = 105C  
20  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
225  
0.55  
A
Forward Voltage, per Element  
@ IF = 10A  
VFM  
IRM  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ Tj = 25C  
@ Tj = 100C  
1.0  
50  
mA  
Cj  
Typical Junction Capacitance (Note 2)  
650  
2.0  
pF  
K/W  
C  
RJC  
Typical Thermal Resistance Junction to Case (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +125  
Notes:  
1. Thermal resistance: junction to case mounted on heat sink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS30091 Rev. B-2  
1 of 2  
SBG2030CT - SBG2045CT  
100  
25  
20  
15  
Tj = 25°C  
10  
10  
1.0  
0.1  
5
0
Pulse Width = 300µs  
2% Duty Cycle  
0
50  
100  
150  
0
0.4  
0.8  
1.2  
1.6  
2.0  
TC, CASE TEMPERATURE (°C)  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
Fig. 1 Forward Current Derating Curve  
300  
250  
200  
150  
10000  
1000  
100  
Tj = 25°C  
f = 1.0MHz  
100  
50  
0
0.1  
1.0  
10  
100  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60Hz  
Fig. 3 Max Non-Repetitive Surge Current  
Fig. 4 Typical Junction Capacitance  
DS30091 Rev. B-2  
2 of 2  
SBG2030CT - SBG2045CT  

相关型号:

SBG2035CT-13

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, PLASTIC, D2PAK-3
DIODES

SBG2035CT-BP

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, D2PAK-3
MCC

SBG2035CT-T

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, PLASTIC, D2PAK-2
DIODES

SBG2035CT-T-F

20A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

SBG2040CT

20A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

SBG2040CT

SCHOTTKY BARRIER RECTIFIERS
LITEON

SBG2040CT-13

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 40V V(RRM), Silicon, PLASTIC, D2PAK-3
DIODES

SBG2040CT-BP

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 40V V(RRM), Silicon, D2PAK-3
MCC

SBG2040CT-T

暂无描述
DIODES

SBG2040CT-T-F

20A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

SBG2040CT-TP

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 40V V(RRM), Silicon, D2PAK-3
MCC

SBG2045CT

20A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES