SBL1060 [DIODES]

10A SCHOTTKY BARRIER RECTIFIER; 10A肖特基整流器


型号：	SBL1060
厂家：	DIODES INCORPORATED
描述：	10A SCHOTTKY BARRIER RECTIFIER 10A肖特基整流器整流二极管瞄准线功效局域网
文件：	总2页 (文件大小：69K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SBL1030 - SBL1060

10A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

TO-220AC

Low Power Loss, High Efficiency

High Surge Capability

High Current Capability and Low Forward

Voltage Drop

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

Plastic Material: UL Flammability

Classification Rating 94V-0

Dim

Min

14.22

9.65

2.54

5.84

Max

15.88

10.67

3.43

6.86

6.35

Pin 1

Pin 2

12.70

0.51

14.73

1.14

3.53Æ 4.09Æ

Mechanical Data

3.56

1.14

0.30

2.03

4.83

1.40

0.64

2.92

5.33

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Pin 1

Pin 2

Polarity: See Diagram

Case

Weight: 2.24 grams (approx.)

Mounting Position: Any

Marking: Type Number

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SBL

1030

SBL

1035

SBL

1040

SBL

1045

SBL

1050

SBL

1060

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

24.5

31.5

Average Rectified Output Current

@ T_C= 95°C

(Note 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

250

V_FM

I_RM

Forward Voltage Drop

@ I_F= 10A, T_C= 25°C

0.60

0.75

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_C25°C

1.0

@ T_C= 100°C

C_j

Typical Junction Capacitance

(Note 2)

700

3.5

°C/W

°C

R_qJc

Thermal Resistance Junction to Case

Operating and Storage Temperature Range

(Note 1)

T_j,T_STG

-65 to +150

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

DS23042 Rev. C-2

1 of 2

SBL1030 - SBL1060

100

SBL1030CT - SBL10450CT

SBL1050CT - SBL1060CT

1.0

T_j= 25°C

Pulse width = 300µs

2% duty cycle

0.1

100

150

0.2

0.4

0.6

0.8

T_C, CASE TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

4000

300

250

200

150

T_j= 25°C

8.3 ms single half-sine-wave

JEDEC method

1000

100

0.1

1.0

100

V_R, REVERSE VOLTAGE (V)

NUMBER OF CYCLES AT 60Hz

Fig. 3 Max Non-Repetitive Surge Current

Fig. 4 Typical Junction Capacitance per Element

100

T_j= 100°C

T_j= 75°C

1.0

0.1

T_j= 25°C

0.01

120

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

DS23042 Rev. C-2

2 of 2

SBL1030 - SBL1060

相关型号：