SBL1650CT [DIODES]
16A SCHOTTKY BARRIER RECTIFIER; 16A肖特基整流器型号: | SBL1650CT |
厂家: | DIODES INCORPORATED |
描述: | 16A SCHOTTKY BARRIER RECTIFIER |
文件: | 总2页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SBL1630CT - SBL1660CT
16A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AB
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
L
Dim
A
B
C
D
E
Min
14.22
9.65
2.54
5.84
¾
Max
15.88
10.67
3.43
B
M
C
D
E
·
·
K
A
6.86
6.35
1
2
3
G
H
J
12.70
2.29
0.51
14.73
2.79
G
1.14
Mechanical Data
J
N
K
L
3.53Æ 4.09Æ
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 2.24 grams (approx.)
Mounting Position: Any
3.56
1.14
0.30
2.03
4.83
1.40
0.64
2.92
H
H
P
M
N
P
Pin 1
Pin 2
Pin 3
·
·
·
·
Case
All Dimensions in mm
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SBL
SBL
SBL
SBL
SBL
SBL
Characteristic
Symbol
Unit
1630CT 1635CT 1640CT 1645CT 1650CT 1660CT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
(Note 1)
16
@ TC = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
250
A
VFM
IRM
Forward Voltage Drop
@ IF = 8.0A, TC = 25°C
0.55
0.70
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TC 25°C
=
0.5
50
mA
@ TC = 100°C
Cj
Typical Junction Capacitance (Note 2)
700
3.5
pF
°C/W
°C
RqJc
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS23014 Rev. F-2
1 of 2
SBL1630CT-SBL1660CT
20
16
12
40
10
SBL1630 - SBL1645
SBL1645 - SBL1660
8
1.0
4
0
Tj = 25°C
Pulse width = 300
2% duty cycle
µs
0.1
0
50
100
150
0.1
0.3
0.5
0.7
0.9
1.1
TC, CASE TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Voltage
Fig. 1 Forward Current Derating Curve
4000
300
250
200
150
Tj = 25°C
8.3ms single half-sine-wave
JEDEC method
1000
100
50
0
100
0.1
1.0
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
100
10
Tj = 100°C
Tj = 75°C
1.0
Tj = 25°C
0.1
0.01
0
40
80
120
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23014 Rev. F-2
2 of 2
SBL1630CT-SBL1660CT
相关型号:
SBL1650CT-BP
Rectifier Diode, 1 Phase, 2 Element, 16A, 50V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
SBL1650PT
肖特基势垒二极管Schottky Barrier Diodes,低压降肖特基势垒二极管Low VF Schottky Barrier Diodes,Tj = -40°C ~ +125°C, Tjm = +125°C。
SIRECTIFIER
SBL1660
肖特基势垒二极管Schottky Barrier Diodes,低压降肖特基势垒二极管Low VF Schottky Barrier Diodes,Tj = -40°C ~ 125°C, Tjm = 125°C。
SIRECTIFIER
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