SBL1650PT [DIODES]

16A SCHOTTKY BARRIER RECTIFIER; 16A肖特基整流器


型号：	SBL1650PT
厂家：	DIODES INCORPORATED
描述：	16A SCHOTTKY BARRIER RECTIFIER 16A肖特基整流器
文件：	总2页 (文件大小：67K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SBL1630PT - SBL1660PT

16A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

Low Power Loss, High Efficiency

High Surge Capability

High Current Capability and Low Forward

Voltage Drop

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Application

Plastic Material - UL Flammability

Classification 94V-0

TO-3P

Dim

Min

3.20

Max

3.50

4.59

5.16

20.80

19.70

2.10

21.30

20.20

2.40

0.51

0.76

15.90

1.70

16.40

2.70

3.10 Æ 3.30 Æ

*2 Places

3.50

5.20

1.12

1.93

2.97

11.70

4.51

5.70

1.22

2.18

3.22

12.80

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 5.6 grams (approx)

Mounting Position: Any

4.30 Typical

Marking: Type Number

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SBL

Characteristic

Symbol

Unit

1630PT 1635PT 1640PT 1645PT 1650PT 1660PT

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

24.5

31.5

Average Rectified Output Current

(Note 1)

@ T_C= 95°C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

250

Forward Voltage Drop

@ I_F= 8.0A, T_C= 25°C

V_FM

I_RM

0.55

0.70

Peak Reverse Current

at Rated DC Blocking Voltage

@T_C25°C

0.5

@ T_C= 100°C

C_j

Typical Junction Capacitance (Note 2)

700

3.5

K/W

°C

R_qJc

Typical Thermal Resistance Junction to Case (Note 1)

Operating and Storage Temperature Range

T_j,T_STG

-65 to +150

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

DS23046 Rev. B-2

1 of 2

SBL1630PT-SBL1660PT

100

SBL1630PT - SBL1645PT

SBL1650PT - SBL1660PT

1.0

0.1

T_j= 25°C

Pulse width = 300 µs

2% duty cycle

100

150

0.2

0.4

0.6

0.8

T_C, CASE TEMPERATURE (°C)

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 1 Forward Current Derating Curve

Fig. 2 Typical Forward Characteristics per Element

300

4000

8.3 ms single half-sine-wave

JEDEC method

T_j= 25°C

250

200

150

1000

100

0.1

1.0

V_R, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance per Element

100

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Surge Current

100

T_j= 100°C

T_j= 75°C

1.0

0.1

T_j= 25°C

0.01

120

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics per Element

DS23046 Rev. B-2

2 of 2

SBL1630PT-SBL1660PT

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