SBL2030CT-A [DIODES]

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 30V V(RRM), Silicon;
SBL2030CT-A
型号: SBL2030CT-A
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 30V V(RRM), Silicon

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文件: 总3页 (文件大小:69K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SPICE MODELS: SBL2030CT SBL2035CT SBL2040CT SBL2045CT SBL2050CT SBL2060CT  
SBL2030CT - SBL2060CT  
20A SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
TO-220AB  
Min  
Dim  
A
B
C
D
E
Max  
15.75  
10.40  
3.43  
6.40  
3.93  
14.27  
2.70  
0.93  
3.78  
4.82  
1.39  
0.50  
2.79  
·
·
·
·
Low Power Loss, High Efficiency  
High Surge Capability  
L
14.48  
10.00  
2.54  
B
M
High Current Capability and Low Forward Voltage Drop  
C
For Use in Low Voltage, High Frequency Inverters, Free  
Wheeling, and Polarity Protection Applications  
D
E
K
5.90  
A
·
Lead Free Finish, RoHS Compliant (Note 3)  
2.80  
G
H
J
12.70  
2.40  
1
2
3
Mechanical Data  
·
·
Case: TO-220AB  
0.69  
G
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
J
N
K
L
3.54  
4.07  
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Polarity: As Marked on Body  
M
N
P
1.15  
H
H
P
0.30  
Pin 1 +  
Pin 2 -  
Pin 3 +  
+
Terminals: Finish – Bright Tin. Solderable per  
MIL-STD-202, Method 208  
2.04  
Case  
·
·
Marking: Type Number  
All Dimensions in mm  
Weight: 2.24 grams (approx.)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SBL  
SBL  
SBL  
SBL  
SBL  
SBL  
Characteristic  
Symbol  
Unit  
2030CT 2035CT 2040CT 2045CT 2050CT 2060CT  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
24.5  
31.5  
V
A
Average Rectified Output Current  
(Note 1)  
20  
@ TC = 95°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
250  
A
VFM  
IRM  
Forward Voltage Drop  
@ IF = 10A, TC = 25°C  
0.55  
0.75  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TC 25°C  
=
1.0  
50  
mA  
@ TC = 100°C  
Cj  
Typical Junction Capacitance (Note 2)  
650  
2.8  
pF  
°C/W  
°C  
RqJC  
Typical Thermal Resistance Junction to Case (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Notes:  
1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.  
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS23015 Rev. 7 - 2  
1 of 3  
SBL2030CT-SBL2060CT  
www.diodes.com  
ã Diodes Incorporated  
20  
16  
40  
10  
SBL2030CT - SBL2045CT  
12  
8
SBL2045CT - SBL2060CT  
1.0  
4
0
0.1  
0
50  
100  
150  
0.1  
0.3  
0.5  
0.7  
0.9  
1.1  
TC, CASE TEMPERATURE (°C)  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Voltage  
Fig. 1 Forward Current Derating Curve  
4000  
300  
250  
200  
Tj = 25°C  
8.3 ms single half-sine-wave  
JEDEC method  
f = 1.0MHz  
1000  
150  
100  
50  
0
100  
0.1  
1.0  
10  
100  
1
10  
NUMBER OF CYCLES AT 60Hz  
Fig. 3 Maximum Non-Repetitive Surge Current  
100  
VR, REVERSE VOLTAGE (V)  
Fig. 4 Typical Junction Capacitance  
100  
Tj = 100°C  
Tj = 75°C  
10  
1.0  
0.1  
Tj = 25°C  
0.01  
0
80  
40  
120  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Fig. 5 Typical Reverse Characteristics  
DS23015 Rev. 7 - 2  
2 of 3  
SBL2030CT-SBL2060CT  
www.diodes.com  
(Note 4)  
Ordering Information  
Device  
Packaging  
Shipping  
SBL20xxCT*  
TO-220AB  
50/Tube  
* xx = Device type, e.g. SBL2045CT  
4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.  
Notes:  
DS23015 Rev. 7 - 2  
3 of 3  
SBL2030CT-SBL2060CT  
www.diodes.com  

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