SBL3060PT [DIODES]
30A SCHOTTKY BARRIER RECTIFIER; 30A肖特基整流器
| 型号： | SBL3060PT |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30A SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBL3030PT - SBL3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material : UL Flammability
Classification Rating 94V-0
TO-3P
Dim
A
B
C
D
E
Min
3.20
Max
3.50
·
·
·
A
B
4.59
5.16
H
20.80
19.70
2.10
21.30
20.20
2.40
·
·
J
S
R
C
D
G
H
J
0.51
0.76
K
15.90
1.70
16.40
2.70
L
P*
*2 Places
Q
K
L
3.10Æ
3.50
3.30Æ
4.51
G
Mechanical Data
·
N
M
N
P
5.20
5.70
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
1.12
1.22
·
E
1.93
2.18
M
M
·
·
·
·
Polarity: As Marked on Body
Marking: Type Number
Weight: 2.24 grams (approx.)
Mounting Position: Any
Q
R
S
2.97
3.22
11.70
12.80
4.30 Typical
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SBL
SBL
SBL
SBL
SBL
SBL
Characteristic
Symbol
Unit
3030PT 3035PT 3040PT 3045PT 3050PT 3060PT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
@ TC = 95°C
30
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
275
A
VFM
IRM
Forward Voltage Drop
@ IF = 15A, TC = 25°C
0.55
0.70
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 100°C
1.0
75
mA
Cj
Typical Junction Capacitance
(Note 2)
1100
2.0
pF
K/W
°C
RqJc
Typical Thermal Resistance Junction to Case
Operating and Storage Temperature Range
(Note 1)
Tj, TSTG
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS23018 Rev. E-2
1 of 2
SBL3030PT - SBL3060PT
30
24
100
SBL3030PT - SBL30450PT
10
18
12
SBL3050PT - SBL3060PT
1.0
6
0
Tj = 25°C
Pulse width = 300 µs
2% duty cycle
0.1
150
100
50
0.2
0.4
0.6
0.8
0
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Fwd Characteristics per Element
4000
300
Tj = 25°C
f = 1MHz
8.3 ms single half-sine-wave
JEDEC method
250
200
1000
150
100
50
0
100
0.1
1.0
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance per Element
10
100
1
10
NUMBER OF CYCLES AT 60 Hz
100
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
TC = 100°C
10
TC = 75°C
1.0
TC = 25°C
0.1
0.01
0
40
80
120
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics per Element
DS23018 Rev. E-2
2 of 2
SBL3030PT - SBL3060PT
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