SBM340-13 [DIODES]

3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERMITE3; 3A表面贴装肖特基整流器POWERMITE3
SBM340-13
型号: SBM340-13
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERMITE3
3A表面贴装肖特基整流器POWERMITE3

整流二极管 瞄准线 功效
文件: 总3页 (文件大小:79K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SBM340  
3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
POWERMITEâ3  
Features  
·
Guard Ring Die Construction for  
Transient Protection  
·
·
·
Low Power Loss, High Efficiency  
Low Forward Voltage Drop  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
POWERMITEâ3  
E
A
Min  
4.03  
6.40  
Max  
4.09  
6.61  
Dim  
A
G
P
3
B
·
Plastic Material: UL Flammability  
Classification Rating 94V-0  
C
.889 NOM  
1.83 NOM  
1.10 1.14  
.178 NOM  
H
J
D
B
E
G
H
1
2
Mechanical Data  
5.01  
5.17  
4.43  
M
·
·
Case: POWERMITEâ3, Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagram  
Marking: Type Number  
Weight: 0.072 grams (approx.)  
J
4.37  
D
K
K
.178 NOM  
C
C
L
L
.71  
.36  
.77  
.46  
·
·
·
M
P
PIN 1  
PIN 2  
PIN 3, BOTTOMSIDE  
HEAT SINK  
1.73  
1.83  
All Dimensions in mm  
Note:  
Pins 1 & 2 must be electrically  
connected at the printed circuit board.  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
40  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
28  
3
V
A
Average Rectified Output Current  
(See also Figure 5)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave Superimposed on Rated Load  
IFSM  
50  
A
(JEDEC Method)  
@ TC = 100°C  
RqJS  
Tj  
Typical Thermal Resistance Junction to Soldering Point  
Operating Temperature Range  
3.4  
°C/W  
°C  
-55 to +125  
-55 to +150  
TSTG  
Storage Temperature Range  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Min  
Typ  
Max  
Unit  
Characteristic  
Symbol  
Test Condition  
V(BR)R  
IR = 0.5mA  
Reverse Breakdown Voltage (Note 1)  
40  
¾
¾
V
IF = 3A, Tj = 25°C  
IF = 3A, Tj = 125°C  
IF = 6A, Tj = 25°C  
IF = 6A, Tj = 125°C  
0.46  
0.40  
0.57  
0.54  
0.50  
0.44  
0.61  
0.58  
VFM  
Forward Voltage (Note 1)  
¾
V
mA Tj = 25°C, VR = 40V  
mA Tj = 100°C, VR = 40V  
15  
¾
500  
20  
IRM  
CT  
Reverse Current (Note 1)  
Total Capacitance  
¾
¾
f = 1.0MHz, VR = 4.0V DC  
pF  
180  
¾
Notes:  
1. Short duration test pulse used to minimize self-heating effect.  
DS30362 Rev. 2 - 2  
1 of 3  
www.diodes.com  
SBM340  
10,000  
1000  
10  
TJ = +125°C  
TJ = +125°C  
TJ = +75°C  
100  
10  
TJ = +75°C  
TJ = +25°C  
TJ = -25°C  
1.0  
TJ = +25°C  
1
0.1  
TJ = -25°C  
0.1  
0.01  
0.1  
0.2  
0.4  
0.3  
0.5  
0.6  
0.7  
0.8  
10  
20  
30  
0
40  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 1 Typical Forward Characteristics  
VR, INSTANTANEOUS REVERSE VOLTAGE (V)  
Fig. 2 Typical Reverse Characteristics  
50  
40  
1000  
f = 1 MHz  
TJ = 25°C  
Single Half-Sine-Wave  
(JEDEC Method)  
TC = 100°C  
30  
20  
100  
10  
10  
0
0.1  
1
10  
100  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
Fig. 4 Typical Capacitance vs. Reverse Voltage  
NUMBER OF CYCLES AT 60 Hz  
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current  
DS30362 Rev. 2 - 2  
2 of 3  
www.diodes.com  
SBM340  
4
4
3
3.5  
Tj = 125°C  
NOTE 2  
Note 1  
Note 2  
3
2.5  
2
2
1
0
1.5  
1
Note 3  
NOTE 3  
0.5  
0
4
1
3
0
2
5
6
7
25  
125  
50  
75  
100  
150  
IF(AV), AVERAGE FORWARD CURRENT (A)  
Fig. 6 Forward Power Dissipation  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 5 DC Forward Current Derating  
(Note 4)  
Ordering Information  
Device  
Packaging  
Shipping  
SBM340-13  
POWERMITEâ3  
5000/Tape & Reel  
Notes:  
1. TA = TSOLDERING POINT, RqJS = 3.4°C/W, RqSA = 0°C/W.  
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad  
dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W.  
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout  
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of  
95-115°C/W.  
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
SBM340 = Product type marking code  
= Manufacturers’ code marking  
YYWW = Date code marking  
YY = Last digit of year ex: 2 for 2002  
WW = Week code 01 to 52  
SBM340  
YYWW  
POWERMITE is a registered trademark of Microsemi Corporation.  
DS30362 Rev. 2 - 2  
3 of 3  
www.diodes.com  
SBM340  

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