SBR30U45CTI [DIODES]

Rectifier Diode, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN;


型号：	SBR30U45CTI
厂家：	DIODES INCORPORATED
描述：	Rectifier Diode, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN
文件：	总3页 (文件大小：71K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SBR30U45CT

SBR30U45CTF

SBR30U45CTI

SBR30U45CTB

Using state-of-the-art SBR IC process technology,

the following features are made possible in a single device:

Major ratings and characteristics

Device optimized for low forward voltage drop to

maximize efficiency in Power Supply applications

Characteristics

_F(AV)Rectangular Waveform

Values

Units

V_RRM

V_F@15A, Tj=125^OC

0.41

V, typ

^OC

Tj (operating/storage)

-65 to 150

ELECTRICAL:

MECHANICAL:

* Ultra-Low Forward Voltage Drop

* Reliable High Temperature Operation

* Super Barrier Design

* Molded Plastic TO-220AB, TO-262, TO-263, and

ITO-220 packages

* Softest, fast switching capability

* 150^OC Operating Junction Temperature

Case Styles

SBR30U45CT

SBR30U45CTF

SBR30U45CTI

SBR30U45CTB

Common

Cathode

Common

Cathode

Common

Cathode

Anode

_Anode1

_Anode1 ^Cathode

Anode

TO-220AB

ITO-220

TO-262

TO-263

________________________________________________________________________________________________

www.apdsemi.com Version 2.0 - April 2006

SBR30U45CT

SBR30U45CTF

SBR30U45CTI

SBR30U45CTB

Maximum Ratings and Electrical Characteristics

(at 25^OC unless otherwise specified)

SYMBOL

UNITS

V_RM

V_RWM

V_RRM

DC Blocking Voltage

Working Peak Reverse Voltage

Peak Repetitive Reverse Voltage

Volts

Average Rectified Forward Current

(Rated V_R-20Khz Square Wave) - 50% duty

cycle

I_O

Amps

Peak Forward Surge Current - 1/2 60hz

I_FSM

I_RRM

260

Amps

Peak Repetitive Reverse Surge Current

(2uS-1Khz)

Instantaneous Forward Voltage (per leg)

I_F= 15A; T_J= 25^OC

Typ

---

Max

0.46

0.58

0.43

V_F

Volts

I_F= 30A; T_J= 25^OC

I_F= 15A; T_J= 125^OC

---

Maximum Instantaneous Reverse Current at

Rated V_RM

Typ

---

Max

0.5

100

I_R

T_J= 25^OC

T_J= 125^OC

Maximum Rate of Voltage Change

(at Rated V_R)

10,000

dv/dt

V/uS

Maximum Thermal Resistance JC (per leg)

Package = TO-220AB, TO-262, & TO-263

Package = ITO-220

^OC/W

^OC

Rθ_JC

Operating and Storage Junction Temperature

T_J

-65 to +150

NOTE: Dice are available for customer applications.

* Pulse width < 300 uS, Duty cycle < 2%

________________________________________________________________________________________________

www.apdsemi.com Version 2.0 - April 2006

SBR30U45CT

SBR30U45CTF

SBR30U45CTI

SBR30U45CTB

100

Tj=150C

Tj=125C

Tj=150C

Tj=75C

Tj=25C

Tj=125C

Tj=75C

0.30

Tj=25C

0.1

0.00

0.10

0.20

0.40

0.50

0.60

Vr, Reverse Voltage (Volts)

Vf, Instantaneous Forward Voltage (Volts)

Figure 1: Typical Reverse Current

Figure 2: Typical Forward Voltage

100

125

150

Tc, Case Temp (C)

Figure 3: Current Derating, Case

APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without

limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual

performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license

under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer

purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or

unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part..

1 Lagoon Drive, Suite 410, Redwood City, CA 94065, USA

Ph: 650 508 8896 FAX: 650 508 8865

Homepage: www.apdsemi.com

email: info@apdsemi.com

________________________________________________________________________________________________

www.apdsemi.com Version 2.0 - April 2006

相关型号：