TB0900H-13-F [DIODES]

100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE; 100A的双向表面贴装晶闸管浪涌保护器件
TB0900H-13-F
型号: TB0900H-13-F
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
100A的双向表面贴装晶闸管浪涌保护器件

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中文:  中文翻译
下载:  下载PDF数据表文档文件
TB0640H - TB3500H  
100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR  
SURGE PROTECTIVE DEVICE  
Features  
·
·
·
·
·
·
·
100A Peak Pulse Current @ 10/1000ms  
400A Peak Pulse Current @ 8/20ms  
58 - 320V Stand-Off Voltages  
Oxide-Glass Passivated Junction  
Bi-Directional Protection In a Single Device  
High Off-State impedance and Low On-State Voltage  
B
SMB  
Min  
Dim  
A
Max  
3.94  
4.57  
2.21  
0.31  
5.59  
0.20  
1.52  
2.62  
Helps Equipment Meet GR-1089-CORE, IEC 61000-4-5, FCC Part  
68, ITU-T K.20/K.21, and UL497B  
3.30  
4.06  
1.96  
0.15  
5.00  
0.10  
0.76  
2.00  
A
J
C
B
·
·
UL Listed Under Recognized Component Index, File Number  
156346  
C
Lead Free Finish/RoHS Compliant (Note 1)  
D
E
D
Mechanical Data  
·
G
H
Case: SMB  
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
J
G
H
All Dimensions in mm  
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
E
Terminals: Lead Free Plating (Matte Tin Finish).  
Solderable per MIL-STD-202, Method 208  
·
·
·
·
Polarity: None; Bi-Directional Devices Have No Polarity Indicator  
Marking: Date Code & Marking Code (See Page 4)  
Ordering Information: See Page 4  
Weight: 0.093 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Non-Repetitive Peak Impulse Current  
Non-Repetitive Peak On-State Current  
Junction Temperature Range  
Symbol  
Ipp  
Value  
100  
50  
Unit  
A
@10/1000us  
ITSM  
@8.3ms (one-half cycle)  
A
Tj  
-40 to +150  
-55 to +150  
20  
°C  
TSTG  
RqJL  
Storage Temperature Range  
°C  
Thermal Resistance, Junction to Lead  
Thermal Resistance, Junction to Ambient  
°C/W  
°C/W  
%/°C  
RqJA  
100  
DVBR/DTj  
Typical Positive Temperature Coefficient for Breakdown Voltage  
0.1  
Maximum Rated Surge Waveform  
Waveform  
2/10 us  
Standard  
Ipp (A)  
500  
Peak Value (Ipp  
)
100  
50  
0
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
tr = rise time to peak value  
tp = decay time to half value  
8/20 us  
400  
Half Value  
10/160 us  
10/700 us  
10/560 us  
10/1000 us  
250  
ITU-T, K.20/K.21  
FCC Part 68  
200  
160  
GR-1089-CORE  
100  
tp  
tr  
0
TIME  
DS30360 Rev. 7 - 2  
1 of 4  
TB0640H - TB3500H  
www.diodes.com  
ã Diodes Incorporated  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Off-State  
Leakage  
Current @  
VDRM  
Rated  
Repetitive  
Off-State  
Voltage  
On-State  
Voltage  
@ IT = 1A  
Breakover  
Current  
IBO  
Holding Current  
IH  
Breakover  
Voltage  
Off-State  
Capacitance  
Marking  
Code  
Part Number  
Min  
Min  
VDRM (V)  
IDRM (uA)  
VBO (V)  
VT (V)  
C
O (pF)  
Max (mA)  
Max (mA)  
(mA)  
(mA)  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
TB0640H  
TB0720H  
TB0900H  
TB1100H  
TB1300H  
TB1500H  
TB1800H  
TB2300H  
TB2600H  
TB3100H  
TB3500H  
58  
65  
5
5
5
5
5
5
5
5
5
5
5
77  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
200  
200  
200  
120  
120  
120  
120  
80  
T064H  
T072H  
T090H  
T110H  
T130H  
T150H  
T180H  
T230H  
T260H  
T310H  
T350H  
88  
75  
98  
90  
130  
160  
180  
220  
265  
300  
350  
400  
120  
140  
160  
190  
220  
275  
320  
80  
80  
80  
Symbol  
Parameter  
VDRM  
IDRM  
VBR  
IBR  
Stand-off Voltage  
Leakage current at stand-off voltage  
Breakdown voltage  
Breakdown current  
VBO  
IBO  
Breakover voltage  
Breakover current  
IH  
Holding current  
NOTE: 2  
VT  
On state voltage  
Peak pulse current  
Off-state capacitance  
IPP  
CO  
NOTE: 3  
Notes:  
1. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
2. > (V /R ) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge  
I
H
L
L
recovery time does not exceed 30ms.  
3. Off-state capacitance measured at f = 1.0MHz, 1.0V  
signal, V = 2V  
R
bias.  
DC  
RMS  
I
IPP  
IBO  
IH  
IBR  
IDRM  
V
VBR  
VT  
VDRM  
VBO  
DS30360 Rev. 7 - 2  
2 of 4  
TB0640H - TB3500H  
www.diodes.com  
1.2  
100  
10  
1.15  
VBR= (TJ)  
VBR = (TJ = 25°C)  
1.1  
1.05  
1
1
0.1  
0.01  
VDRM = 50V  
0.95  
0.9  
-50  
50  
125  
75 100 150 175  
-25  
0
25  
0.001  
0
-25  
25  
50  
75  
100 125  
150  
TJ, JUNCTION  
TEMPERATURE (°C)  
Fig. 2 Relative Variation of Breakdown Voltage  
vs. Junction Temperature  
TJ, JUNCTION TEMPERATURE (°C)  
Fig. 1 Off-State Current vs. Junction Temperature  
100  
1.1  
VBO= (TJ)  
VBO = (TJ = 25°C)  
1.05  
10  
1
Tj = 25°C  
0.95  
-25  
25  
TJ, JUNCTION TEMPERATURE (ºC)  
175  
1
-50  
0
50 75 100 125  
150  
1
5
1.5  
2
2.5  
VT, ON-STATE VOLTAGE (V)  
3
3.5  
4
4.5  
Fig. 3 Relative Variation of Breakover Voltage  
vs. Junction Temperature  
Fig. 4 On-State Current vs. On-State Voltage  
1.4  
1.3  
1.2  
1.1  
1
1
0.9  
0.8  
0.7  
Tj = 25°C  
CO= (VR  
)
f = 1 Mhz  
RMS = 1V  
0.6  
0.5  
0.4  
0.3  
V
CO = (VR = 1V)  
IH = (TJ)  
IH = (TJ = 25°C)  
0.1  
-50  
-25  
25  
50  
75  
100 125  
0
1
10  
VR, REVERSE VOLTAGE (V)  
100  
TJ, JUNCTION TEMPERATURE (°C)  
Fig. 5 Relative Variation of Holding Current vs.  
Junction Temperature  
Fig. 6 Relative Variation of Normalized Capacitance  
vs. Reverse Voltage Bias  
DS30360 Rev. 7 - 2  
3 of 4  
TB0640H - TB3500H  
www.diodes.com  
(Note 4)  
Ordering Information  
Device  
Packaging  
SMB  
Shipping  
TB0640H-13-F  
TB0720H-13-F  
TB0900H-13-F  
TB1100H-13-F  
TB1300H-13-F  
TB1500H-13-F  
TB1800H-13-F  
TB2300H-13-F  
TB2600H-13-F  
TB3100H-13-F  
TB3500H-13-F  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
SMB  
SMB  
SMB  
SMB  
SMB  
SMB  
SMB  
SMB  
SMB  
SMB  
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
XXXXX = Product Type Marking Code (See Table on Page 2)  
YWW = Date Code Marking  
Y = Year ex: 2 = 2002  
YWW  
XXXXX  
WW = Week Code 01 to 52  
Date Code Key  
Year  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
2
3
4
5
6
7
8
9
IMPORTANT NOTICE  
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-  
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;  
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such  
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.  
LIFE SUPPORT  
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the  
component may directly threaten life or cause injury without the express written approval of Diodes Incorporated.  
DS30360 Rev. 7 - 2  
4 of 4  
TB0640H - TB3500H  
www.diodes.com  

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