TB1100H [DIODES]
100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE; 100A的双向表面贴装晶闸管浪涌保护器件
| 型号： | TB1100H |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| 文件： | 总4页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TB0640H - TB3500H
100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR
SURGE PROTECTIVE DEVICE
Features
·
·
·
·
·
·
100A Peak Pulse Current @ 10/1000ms
400A Peak Pulse Current @ 8/20ms
58 - 320V Stand-Off Voltages
Oxide-Glass Passivated Junction
Bi-Directional Protection In a Single Device
A
SMB
Min
High Off-State impedance and Low On-State
Voltage
Dim
A
Max
4.57
3.94
2.21
0.31
5.59
0.20
2.62
1.52
4.06
3.30
1.96
0.15
5.21
0.05
2.01
0.76
B
C
B
Mechanical Data
C
·
Case: SMB, Molded Plastic
Plastic Material: UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
D
·
E
D
F
·
·
G
G
H
F
H
·
Polarity: None; Bi-Directional Devices Have No
Polarity Indicator
All Dimensions in mm
E
·
·
·
Weight: 0.093 grams (approx.)
Marking: Date Code & Marking Code (See Page 4)
Ordering Information: See Page 4
@ TA = 25°C unless otherwise specified
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Non-Repetitive Peak Impulse Current
Non-Repetitive Peak On-State Current
Junction Temperature Range
Symbol
Ipp
Value
100
50
Unit
A
@10/1000us
ITSM
Tj
@8.3ms (one-half cycle)
A
-40 to +150
-55 to +150
20
°C
TSTG
Storage Temperature Range
°C
R
qJL
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Ambient
°C/W
°C/W
%/°C
R
qJA
100
DVBR/DTj
Typical Positive Temperature Coefficient for Breakdown Voltage
0.1
Maximum Rated Surge Waveform
Peak Value (Ipp
)
100
50
0
Waveform
2/10 us
Standard
Ipp (A)
500
tr = rise time to peak value
tp = decay time to half value
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
8/20 us
400
Half Value
10/160 us
10/700 us
10/560 us
10/1000 us
250
ITU-T, K20/K21
FCC Part 68
200
160
GR-1089-CORE
100
tp
tr
0
TIME
DS30360 Rev. 3 - 2
1 of 4
TB0640H - TB3500H
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Off-State
Leakage
Current @
VDRM
Rated
Repetitive
Off-State
Voltage
On-State
Voltage
@ IT = 1A
Breakover
Current
IBO
Holding Current
IH
Breakover
Voltage
Off-State
Capacitance
Marking
Code
Part Number
Min
Min
VDRM (V)
IDRM (uA)
VBO (V)
VT (V)
CO (pF)
Max (mA)
Max (mA)
(mA)
(mA)
50
50
50
50
50
50
50
50
50
50
50
TB0640H
TB0720H
TB0900H
TB1100H
TB1300H
TB1500H
TB1800H
TB2300H
TB2600H
TB3100H
TB3500H
58
65
5
5
5
5
5
5
5
5
5
5
5
77
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
800
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
150
800
800
800
800
800
800
800
800
800
800
800
200
200
200
120
120
120
120
80
T064H
T072H
T090H
T110H
T130H
T150H
T180H
T230H
T260H
T310H
T350H
88
75
98
90
130
160
180
220
265
300
350
400
120
140
160
190
220
275
320
80
80
80
Symbol
Parameter
VDRM
IDRM
VBR
IBR
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
VBO
IBO
Breakover voltage
Breakover current
IH
Holding current
NOTE: 1
VT
On state voltage
Peak pulse current
Off-state capacitance
IPP
CO
NOTE: 2
Notes:
1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias.
I
I
PP
I
BO
I
H
I
BR
I
DRM
V
V
BR
V
T
V
V
DRM
BO
DS30360 Rev. 3 - 2
2 of 4
TB0640H - TB3500H
1.2
100
1.15
V
BR
= (T )
J
10
V
BR
= (T = 25°C)
J
1.1
1.05
1
1
0.1
V
= 50V
DRM
0.95
0.01
0.9
-50
50
125
75 100 150 175
-25
0
25
0.001
0
-25
25
50
75
100 125
150
T , JUNCTION
J
TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Temperature
Fig. 1 Off-State Current vs. Junction Temperature
100
1.1
V = (T )
BO J
V
BO
= (T = 25°C)
J
1.05
10
1
T = 25°C
j
0.95
1
-25
25
175
150
-50
0
50 75 100 125
1
5
1.5
2
2.5
V , ON-STATE VOLTAGE (V)
3
3.5
4
4.5
T , JUNCTION TEMPERATURE (ºC)
J
Fig. 3 Relative Variation of Breakover Voltage
T
vs. Junction Temperature
Fig. 4 On-State Current vs. On-State Voltage
1.4
1.3
1.2
1.1
1
1
0.9
0.8
0.7
T = 25°C
j
C
= (V )
R
O
f = 1 Mhz
0.6
0.5
0.4
0.3
V
= 1V
C
O
= (V = 1V)
R
RMS
I
= (T )
J
H
I
H
= (T = 25°C)
J
0.1
-50
-25
25
50
75
100 125
0
1
10
V , REVERSE VOLTAGE (V)
R
100
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 Relative Variation of Holding Current vs.
Junction Temperature
Fig. 6 Relative Variation of Normalized Capacitance
vs. Reverse Voltage Bias
DS30360 Rev. 3 - 2
3 of 4
TB0640H - TB3500H
(Note 3)
Ordering Information
Device
Packaging
Shipping
TB0640H-13
TB0720H-13
TB0900H-13
TB1100H-13
TB1300H-13
TB1500H-13
TB1800H-13
TB2300H-13
TB2600H-13
TB3100H-13
TB3500H-13
SMB
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXXXX = Product Type Marking Code
YWW
XXXXX
YWW = Date Code Marking
Y = Year ex: 2 = 2002
WW = Week
Date Code Key
Year
2002
2003
2004
Code
2
3
4
DS30360 Rev. 3 - 2
4 of 4
TB0640H - TB3500H
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