TB1100M [LITEON]
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE; 表面贴装晶闸管浪涌保护器件
| 型号： | TB1100M |
| 厂家： | 
LITE-ON TECHNOLOGY CORPORATION |
| 描述： | SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| 文件： | 总4页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LITE-ON
SEMICONDUCTOR
TB0640M thru TB3500M
Bi-Directional
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
58 to 320
VDRM
IPP
-
-
Volts
50
Amperes
FEATURES
SMB
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 50A @10/1000us or 250A
@8/20us
SMB
MIN.
4.06
3.30
1.96
0.15
5.21
0.05
2.01
0.76
DIM.
A
MAX.
4.57
3.94
2.21
0.31
5.59
0.20
2.62
1.52
High off state Impedance and low on state voltage
A
Plastic material has UL flammability classification
94V-0
B
B
C
C
D
E
F
MECHANICAL DATA
Case : Molded plastic
G
G
D
H
F
E
H
Polarity : Denotes none cathode band
Weight : 0.093 grams
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS
SYMBOL
PP
TSM
VALUE
UNIT
A
A
I
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction temperature range
50
I
25
℃
T
J
-40 to +150
-55 to +150
℃
T
STG
storage temperature range
THERMAL RESISTANCE
CHARACTERISTICS
SYMBOL
VALUE
UNIT
Rth(J-L)
Rth(J-A)
℃
Junction to leads
20
100
0.1
/W
℃
/W
Junction to ambient on print circuit (on recommended pad layout)
Typical positive temperature coefficient for brekdown voltage
△
△
V / T
BR J
℃
%/
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
2/10 us
STANDARD
I
PP (A)
300
100
Peak value (Ipp)
GR-1089-CORE
tr= rise time to peak value
tp= Decay time to half value
8/20 us
10/160 us
10/700 us
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
250
150
100
Half value
50
0
10/560 us
FCC Part 68
75
50
tr
tp
TIME
REV. 0, 09-Oct-2001, KSWB06
10/1000 us
GR-1089-CORE
℃
ELECTRICAL CHARACTERISTICS @ TA= 25 unless otherwise specified
TB0640M thru TB3500M
RATED
OFF-STATE
LEAKAGE
CURRENT
@ VDRM
ON-STATE
VOLTAGE
T
@ I =1.0A
REPETITIVE
OFF-STATE
VOLTAGE
BREAKOVER
VOLTAGE
BREAKOVER
CURRENT
HOLDING
CURRENT
OFF-STATE
CAPACITANCE
PARAMETER
SYMBOL
UNITS
V
DRM
I
DRM
V
BO
V
T
I
BO
-
I
BO+
I
H-
I
H+
Co
pF
Volts
Max
uA
Volts
Max
Volts
Max
mA
Min
mA
mA
Min
mA
LIMIT
Max
Max
Max
Typ
58
65
5
5
77
88
3.5
3.5
50
50
800
800
150
150
800
800
140
140
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
75
5
98
3.5
50
800
150
800
140
90
5
5
130
160
3.5
3.5
50
50
800
800
150
150
800
800
90
90
120
TB1500M
TB1800M
140
5
180
3.5
50
800
150
800
90
160
190
5
5
220
265
3.5
3.5
50
50
800
800
150
150
800
800
90
60
TB2300M
TB2600M
TB3100M
220
275
320
5
5
5
300
350
400
3.5
3.5
3.5
50
50
50
800
800
800
150
150
150
800
800
800
60
60
60
TB3500M
I
SYMBOL
PARAMETER
V
DRM
Stand-off Voltage
I
PP
I
DRM
Leakage current at stand-off voltage
Breakdown voltage
V
BR
I
BO
I
H
I
BR
Breakdown current
I
BR
I
DRM
V
BO
Breakover voltage
Breakover current
V
V
BR
I
BO
V
DRM
V
BO
V
T
I
H
Holding current
On state voltage
Note: 1
V
T
Peak pulse current
I
PP
C
O
Off state capacitance
Note: 2
REV. 0, 09-Oct-2001, KSWB06
H L L
NOTES: 1. I > (V /R ) If this criterion is not obeyed, the TSPD Triggers but does not return correctly to high-resistance state.
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0VRMS signal; VR=2VDC bias.
RATING AND CHARACTERISTICS CURVES
TB0640M thru TB3500M
FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE
vs JUNCTION TEMPERATURE
1.20
100
1.15
10
1.10
1.05
VBR (TJ)
1.0
0.1
℃
VBR (TJ=25
)
VDRM=50V
1.0
0.01
0.95
0.001
0.90
-25
0
25
50
75
100
125
150
-50
-25
0
50
75
100
125
150
175
25
℃
℃
)
T
J
, JUNCTION TEMPERATURE (
)
T
J
, JUNCTION TEMPERATURE (
FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE
FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE
vs JUNCTION TEMPERATURE
100
1.10
VBO (TJ)
1.05
℃
)
VBO (TJ=25
10
1.0
℃
T = 25
J
1
0.95
1
10
-50
-25
0
50
75
100
125
150
175
25
℃
T
J
, JUNCTION TEMPERATURE (
)
V (T); ON STATE VOLTAGE
FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT
vs JUNCTION TEMPERATURE
FIG. 6 - RELATIVE VARIATION OF JUNCTION
CAPACITANCE vs REVERSE VOLTAGE BIAS
1.6
1
1.4
1.2
1
0.8
0.6
0.4
0.2
IH (TJ)
C (VR)
O
℃
℃
Tj =25
f=1MHz
= 1V
IH (TJ=25
)
C (VR = 1V)
O
V
RMS
0.1
1
10
100
-50
-25
0
25
50
75
100
125
VR, REVERSE VOLTAGE
℃
T , JUNCTION TEMPERATURE ( )
J
REV. 0, 09-Oct-2001, KSWB06
TYPICAL CIRCUIT APPLICATIONS
TB0640M thru TB3500M
FUSE
RING
TELECOM
EQUIPMENT
TSPD 1
E.G. MODEM
TIP
RING
PTC
TSPD 1
TELECOM
EQUIPMENT
TSPD 2
PTC
E.G. ISDN
TIP
RING
PTC
TSPD 2
TSPD 3
TELECOM
EQUIPMENT
TSPD 1
E.G. LINE
CARD
TIP
PTC
The PTC (Positive Temperature Coefficient) is an overcurrent protection device
REV. 0, 09-Oct-2001, KSWB06
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