UZTX649 [DIODES]
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, E-LINE PACKAGE-3;
| 型号： | UZTX649 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, E-LINE PACKAGE-3 开关 晶体管 |
| 文件： | 总3页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR
ZTX649
MEDIUM POWER TRANSISTOR
ISSUE 2 APRIL 94
FEATURES
*
*
*
*
25 Volt VCEO
2 Amp continuous current
Low saturation voltage
Ptot=1 Watt
APPLICATIONS
C
B
E
*
*
Motor driver
E-Line
DC-DC converters
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
35
25
5
V
V
Peak Pulse Current
6
A
Continuous Collector Current
IC
2
A
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO 35
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 25
V
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
ICBO
5
IE=100µA
Collector Cut-Off
Current
0.1
10
VCB=30V
VCB=30V,T
µA
µA
=100°C
Emitter Cut-Off Current IEBO
0.1
VEB=4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
VBE(on)
0.12
0.23
0.3
0.5
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
0.9
1.25
V
IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
0.8
1
V
IC=1A, VCE=2V*
Static Forward Current hFE
Transfer Ratio
70
100
75
200
200
150
50
IC=50mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
300
15
Transition Frequency
fT
150
240
MHz
IC=100mA, VCE=5V
f=100MHz
3-216
ZTX649
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Output Capacitance
Switching Times
Cobo
ton
25
50
pF
ns
ns
VCB=10V f=1MHz
IC=500mA, VCC=10V
55
I
B1=IB2=50mA
toff
300
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
2.0
200
D=1 (D.C.)
t
1
D=t1/tP
Case temperature
t
P
1.5
100
D=0.5
1.0
0.5
0
D=0.2
D=0.1
Single Pulse
0
0.0001 0.001
-40 -20
0
20
0.01
0.1
1
10
100
40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-217
ZTX649
TYPICAL CHARACTERISTICS
220
200
0.8
0.6
0.4
0.2
180
160
140
120
VCE=2V
IC/IB=10
100
80
60
40
0
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
CE(sat)
IC - Collector Current (Amps)
FE
C
v I
h
C
v I
V
2.2
1.4
2.0
1.8
1.6
1.2
1.0
0.8
0.6
1.4
1.2
1.0
0.8
0.6
0.4
IC/IB=10
VCE=2V
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
BE(sat)
IC - Collector Current (Amps)
C
v I
V
BE(on)
V
C
v I
Single Pulse Test at Tamb=25°C
10
td
tr
tf
IB1=IB2=IC/10
ns
140
120
td
ts
ns
1.0
100
1000
800
tr
D.C.
1s
80
60
40
tf
ts
100ms
10ms
1.0ms
600
0.1
400
20
200
0
0
0.01
0.1
1
0.01
1
10
100
1000
VCE - Collector Voltage (Volts)
IC - Collector Current (Amps)
Safe Operating Area
Switching Speeds
3-218
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