UZXTBM322TC [DIODES]

Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 2 X 2 MM, MLP322, 5 PIN;


型号：	UZXTBM322TC
厂家：	DIODES INCORPORATED
描述：	Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 2 X 2 MM, MLP322, 5 PIN 开关晶体管
文件：	总6页 (文件大小：170K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ZXTBM322

MPPS™ Miniature Package Power Solutions

20V NPN LOW SATURATION TRANSISTOR

SUMMARY

CEO

= 20V; R

= 47m ; I = 4.5A

SAT C

DESCRIPTION

Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,

this new 4^thgeneration low saturation transistor offers extremely low on state

losses making it ideal for use in DC-DC circuits and various driving and power

management functions.

Additionally users will also gain several other key benefits:

Performance capability equivalent to much larger packages

Improved circuit efficiency & power levels

Lower package height (nom 0.9mm)

PCB area and device placement savings

Reduced component count

2mm x 2mm MLP

(single die)

FEATURES

•

Low Equivalent On Resistance

Extremely Low Saturation Voltage (150mV @1A)

h_FEspecified up to 6A

I_C= 4.5A Continuous Collector Current

2mm x 2mm MLP

APPLICATIONS

•

DC - DC Converters (FET Drivers)

Power switches

Motor control

PINOUT

LED backlighting

ORDERING INFORMATION

DEVICE

REEL

TAPE

WIDTH PER REEL

QUANTITY

ZXTBM322TA

ZXTBM322TC

7’‘

8mm

3000 units

10000 units

13’‘

2mm x 2mm Single MLP

underside view

DEVICE MARKING

ISSUE 2 - JUNE 2002

ZXTBM322

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

LIMIT

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current (c)

Continuous Collector Current (a)

Continuous Collector Current (b)

Base Current

CBO

CEO

EBO

7.5

4.5

1000

Power Dissipation at TA=25°C (a)

Linear Derating Factor

1.5

mW/°C

Power Dissipation at TA=25°C (b)

Linear Derating Factor

2.45

19.6

mW/°C

Power Dissipation at TA=25°C (d)

Linear Derating Factor

mW/°C

Power Dissipation at TA=25°C (e)

Linear Derating Factor

mW/°C

Operating and Storage Temperature Range

T :T

-55 to +150

°C

stg

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

°C/W

Junction to Ambient (a)

Junction to Ambient (b)

Junction to Ambient (d)

Junction to Ambient (e)

NOTES

θJA

125

(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.

(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at tр5 secs with all exposed pads

attached.

(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.

(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.

(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in

the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is

Rth=300°C/W giving a power rating of Ptot=420mW.

ISSUE 2 - JUNE 2002

ZXTBM322

TYPICAL CHARACTERISTICS

3.5

3.0

CE(SAT)

T_amb=25°C

Limited

2.5

2.0

1.5

1.0

0.5

0.0

2oz Cu

Note: e

100ms

10ms

0.1

1oz Cu

Note: a

1ms

100us

Single Pulse, T_amb=25°C

0.01

0.1

100 125 150

V Collector-Emitter Voltage (V)

Temperature (°C)

Derating Curve

Safe Operating Area

225

200

175

150

125

100

D=0.5

1oz copper

Single Pulse

D=0.05

D=0.1

D=0.2

2oz copper

100µ 1m 10m 100m

10 100 1k

0.1

100

Pulse Width(s)

BoardCuArea(sqcm)

Transient Thermal Impedance

Thermal Resistance v Board Area

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

=25°C

2oz copper

T_j^a_m^m_a^b_x=150°C

Continuous

1oz copper

0.1

100

BoardCuArea(sqcm)

Power Dissipation v Board Area

ISSUE 2 - JUNE 2002

ZXTBM322

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL

MIN.

TYP.

100

MAX. UNIT

CONDITIONS.

I =100␮A

Collector-Base Breakdown

Voltage

(BR)CBO

(BR)CEO

Collector-Emitter Breakdown

Voltage

I =10mA*

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

7.5

8.2

I =100␮A

(BR)EBO

CBO

=32V

Emitter Cut-Off Current

=6V

EBO

Collector Emitter Cut-Off Current

=16V

CES

Collector-Emitter Saturation

Voltage

I =0.1A, I =10mA*

C B

CE(sat)

150

135

250

270

I =1A, I =10mA*

C B

I =2A, I =50mA*

115

190

210

I =3A, I =100mA*

I =4.5A, I =125mA*

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

0.98

0.88

1.05

0.95

I =4.5A, I =125mA*

C B

BE(sat)

BE(on)

I =4.5A, V =2V*

Static Forward Current Transfer

Ratio

200

300

200

100

400

450

360

180

I =10mA, V =2V*

I =0.2A, V =2V*

I =2A, V =2V*

I =6A, V =2V*

Transition Frequency

100

140

MHz

I =50mA, V =10V

f=100MHz

Output Capacitance

Turn-On Time

=10V, f=1MHz

obo

(on)

(off)

170

400

=10V, I =3A

=I =10mA

B1 B2

Turn-Off Time

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

ISSUE 2 - JUNE 2002

ZXTBM322

TYPICAL CHARACTERISTICS

0.25

I_C/I_B=50

0.20

Tamb=25°C

100m

10m

100°C

25°C

0.15

0.10

0.05

0.00

I_C/I_B=100

I_C/I_B=50

-55°C

I_C/I_B=10

I_C^10mCollector Current ¹(A)

100m

V_CE(SAT)vI_C

630

540

450

360

270

180

V =2V

I_C/I_B=50

1.0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

100°C

25°C

0.8

0.6

0.4

-55°C

25°C

-55°C

100°C

100m

I_CCollector Current (A) ¹⁰

I_C^10mCollector Current ¹(A)

10m

100m

h vI_C

V_BE(SAT)vI_C

V =2V

1.0

0.8

0.6

0.4

-55°C

25°C

100°C

100m

I_C^10mCollector Current ¹(A)

V_BE(ON)vI_C

ISSUE 2 - JUNE 2002

ZXTBM322

MLP322 PACKAGE OUTLINE (2mm x 2mm Micro Leaded Package)

CONTROLLING DIMENSIONS IN MILLIMETRES

APPROX. CONVERTED DIMENSIONS IN INCHES

PACKAGE DIMENSIONS

MILLIMETRES

MIN. MAX.

0.80 1.00

INCHES

MIN.

MILLIMETRES

MIN. MAX.

INCHES

MIN. MAX.

DIM

MAX.

0.0393

0.002

0.0315

0.00

0.65 REF

2.00 BSC

0.0255 REF

0.0787 BSC

0.00

0.65

0.15

0.18

0.17

0.05

0.75

0.25

0.28

0.30

0.0255

0.0059

0.0070

0.0066

0.0295

0.0098

0.0110

0.0118

0.79

0.99

0.68

0.45

0.031

0.039

0.0267

0.0177

0.48

0.20

0.0188

0.0078

0.125 MAX.

0.075 BSC

0Њ 12Њ

0.005 REF

0.0029 BSC

0Њ 12Њ

2.00 BSC

0.0787 BSC

1.22

0.56

1.42

0.76

0.0480

0.0220

0.0559

0.0299

⍜

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usa.sales@zetex.com

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For the latest product information, log on to www.zetex.com

ISSUE 2 - JUNE 2002

UZXTBM322TC [DIODES]

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