VN10LF [DIODES]
SOT23 N-CHANNEL ENHANCEMENT; SOT23封装N沟道增强
| 型号： | VN10LF |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SOT23 N-CHANNEL ENHANCEMENT |
| 文件： | 总1页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
VN10LF
ISSUE 2 – J ANUARY 1996
FEATURES
*
*
60 Volt VDS
RDS(on)=5Ω
S
D
PARTMARKING DETAIL –
MY
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
UNIT
V
Dra in -S o u rce Vo ltag e
60
150
Co n tin u o u s Dra in Cu rren t at Ta m b = 25°C
Pu ls e d Dra in Cu rre n t
ID
mA
A
IDM
3
Ga te S o u rce Vo lta g e
VGS
V
± 20
Po w e r Dis s ip a tio n a t Ta m b = 25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
330
mW
°C
Tj:Ts tg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN.
TYP.
MAX. UNIT
V
CONDITIONS .
Dra in -S o u rce
BVDS S
60
ID=100µA, VGS=0V
Bre akd o w n Vo ltag e
Ga te-S o u rce
VGS (th )
0.8
2.5
V
ID=1m A, VDS= VGS
Bre akd o w n Vo ltag e
Ga te Bo d y Lea ka g e
IGS S
IDS S
100
10
n A
V
GS=± 20V, VDS=0V
Ze ro Ga te Vo lta g e
Dra in Cu rre n t (1)
VDS=60 V, VGS=0V
µA
On S ta te Dra in
Cu rre n t(1)
ID(o n )
750
100
m A
VDS=15 V, VGS=10V
S ta tic Drain S o u rce On RDS (o n )
S ta te Re s is tan ce (1)
5.0
7.5
V
V
GS=10V, ID=500m A
GS=5V, ID=200m A
Ω
Ω
Fo rw a rd
g fs
m S
VDS=15V, ID=500m A
Tra n s co n d u cta n ce
(1)(2)
In p u t Ca p a citan ce (2)
Cis s
60
25
p F
p F
Co m m o n S o u rce
Co s s
VDS=25 V, VGS=0V
f=1MHz
Ou tp u t Ca p a cita n ce (2)
Reve rs e Tra n s fe r
Cap acita n ce (2)
Crs s
5
p F
Tu rn -On Tim e (2)(3)
Tu rn -Off Tim e (2)(3)
t(o n )
t(o ff)
3
4
10
10
n s
n s
VDD ≈15V, ID=600m A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
Spice param eter data is available upon request for this device
For typical characteristics graphs see ZVN3306F datasheet.
3 - 308
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