ZTX948STZ [DIODES]
Power Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | ZTX948STZ |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3 晶体 晶体管 功率双极晶体管 开关 局域网 |
| 文件： | 总3页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 JUNE 94
ZTX948
FEATURES
*
*
*
*
*
*
*
4.5 Amps continuous current
Up to 20 Amps peak current
Very low saturation voltage
Excellent gain up to 20 Amps
Very low leakage
C
B
E
Exceptional gain linearity down to 10mA
Spice model available
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-40
-20
Collector-Emitter Voltage
Emitter-Base Voltage
V
-6
V
Peak Pulse Current
-20
A
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-4.5
A
Ptotp
1.58
W
W
°C
Ptot
1.2
Tj:Tstg
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
-40
-40
-20
-6
-55
-55
-30
-8
V
V
V
V
IC=-100µA
Collector-Emitter Breakdown
Voltag
IC=-1µA, RB ≤1KΩ
IC=-10mA*
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
IE=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
-50
-1
nA
µA
VCB=-30V
VCB=-30V, Tamb=100°C
ICER
R ≤1KΩ
-50
-1
nA
µA
VCB=-30V
CB=-30V, Tamb=100°C
V
IEBO
-10
nA
VEB=-6V
Collector-Emitter Saturation
Voltage
VCE(sat)
-45
-90
-180
-230
-100
-150
-250
-310
mV
mV
mV
mV
IC=-0.5A, IB=-10mA*
IC=-2A, IB=-200mA*
IC=-4A, IB=-400mA*
IC=-5A, IB=-300mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-960
-1100 mV
IC=-5A, IB=-300mA*
3-309
ZTX948
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
VBE(on)
-860
-1000 mV
IC=-5A, VCE=-1V*
Static Forward
Current Transfer Ratio
hFE
100
100
75
60
15
200
200
160
130
40
IC=-10mA, VCE=-1V
IC=-1A, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
IC=-20A, VCE=-1V*
300
Transition Frequency
fT
80
MHz
pF
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Switching Times
Cobo
163
VCB=-10V, f=1MHz
ton
toff
120
126
ns
ns
IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
Rth(j-amb)
Rth(j-case)
150
50
°C/W
°C/W
4.0
3.0
2.0
1.0
D.C.
150
t
1
D=t
1/tP
100
50
0
tP
D=0.6
D=0.2
D=0.1
D=0.05
Single Pulse
-40 -20
0
20
0.0001 0.001
0.01
0.1
1
10
100
40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-310
ZTX948
TYPICAL CHARACTERISTICS
-55°C
+25°C
+175°C
IC/IB=50
IC/IB=10
Tamb=25°C
IC/IB=10
1.6
1.4
1.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
0.2
0.2
0
0
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
VCE=1V
IC/IB=10
1.6
1.4
1.6
1.4
1.2
300
200
100
1.2
1.0
1.0
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0
0
0.001
0.01
0.1
10 20
1
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
FE
IC - Collector Current (Amps)
BE(sat)
C
C
v I
h
v I
V
Single Pulse Test at Tamb=25°C
100
10
-55°C
+25°C
+100°C
+175°C
VCE=1V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
D.C.
1s
100ms
10ms
1.0ms
0.1ms
1
0
0.001
0.01
0.1
1
10 20
0.1
0.1
1
10
100
IC - Collector Current (Amps)
BE(on)
VCE - Collector Voltage (Volts)
C
V
v I
Safe Operating Area
3-311
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