ZUMT619 [DIODES]
Super323?SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR; Super323 ？ SOT323 NPN硅功率（开关）晶体管
| 型号： | ZUMT619 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Super323?SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR |
| 文件： | 总3页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Super323 SOT323 NPN SILICON POWER
ZUMT619
(SWITCHING) TRANSISTOR
ISSUE 2 - DECEMBER 2008
FEATURES
*
*
*
*
*
500mW POWER DISSIPATION
IC CONT 1A
2A Peak Pulse Current
Excellent HFE Characteristics Up To 2A (pulsed)
Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
*
*
LCD backlighting inverter circuits
Boost functions in DC-DC converters
DEVICE TYPE
ZUMT619
COMPLEMENT
ZUMT720
PARTMARKING
T63
RCE(sat)
160mΩ at 1A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
50
V
5
V
2
A
IC
1.0
200
A
IB
mA
mW
Power Dissipation at Tamb=25°C
Ptot
385 †
500 ‡
Operating and Storage Temperature Tj:Tstg
Range
-55 to +150
°C
†
‡
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT619
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
V(BR)CBO
MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
50
V
IC= 100µA
IC= 10mA*
IE= 100µA
VCB= 40V
VEB= 4V
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
50
5
V
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
10
10
10
nA
nA
nA
Emitter Cut-Off
Current
IEBO
Collector Emitter
Cut-Off Current
ICES
VCES= 40V
Collector-Emitter
Saturation Voltage
VCE(sat)
24
35
mV
mV
mV
mV
IC= 100mA, IB= 10mA*
IC= 250mA, IB= 10mA*
IC= 500mA, IB= 10mA*
IC= 1A, IB= 50mA*
60
80
120
160
200
270
Base-Emitter
VBE(sat)
VBE(on)
hFE
940
1100 mV
IC= 1A, IB= 50mA*
Saturation Voltage
Base-Emitter
Turn-On Voltage
850
1100 mV
I = 1A, VCE= 2V*
C
Static Forward
Current Transfer
Ratio
200
300
200
75
420
450
350
130
60
IC=10mA, VCE= 2V*
IC= 100mA, VCE=2 V*
IC= 500mA, VCE=2V*
IC= 1A, VCE= 2V*
20
IC= 1.5A, VCE=2 V*
Transition
Frequency
fT
215
MHz
IC= 50mA, VCE=10V
f= 100MHz
Output Capacitance
Turn-On Time
Cobo
t(on)
t(off)
6
pF
ns
VCB= 10V, f=1MHz
VCC=10 V, IC= 1A
150
425
IB1=IB2=100mA
Turn-Off Time
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZUMT619
TYPICAL CHARACTERISTICS
0.4
0.3
0.2
0.1
0
0.4
+25°C
IC/IB=50
0.3
IC/IB=10
IC/IB=50
IC/IB=100
-55°C
+25°C
+100°C
+150°C
0.2
0.1
0
1m
10m
100m
1
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
1.0
0.8
0.6
0.4
0.2
0
IC/IB=50
VCE=2V
800
600
400
200
0
+100°C
+25°C
-55°C
-55°C
+25°C
+100°C
+150°C
1m
10m
100m
1
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
1.15
0.9
10
1
0.6
0.3
0
DC
1s
100ms
10ms
1ms
100µs
100m
-55°C
+25°C
+100°C
+150°C
10m
100m
1
10
100
1m
10m
100m
1
10
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
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