ZVN2110DWP [DIODES]
Small Signal Field-Effect Transistor, 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.042 X 0.042 INCH, G17, DIE-2;
| 型号： | ZVN2110DWP |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.042 X 0.042 INCH, G17, DIE-2 晶体 晶体管 开关 |
| 文件： | 总3页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN2110A
ISSUE 2 – MARCH 94
FEATURES
*
*
100 Volt VDS
RDS(on)= 4Ω
D
G
S
E-Line
TO92 Com patible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
UNIT
V
Dra in -S o u rce Vo ltag e
100
320
Co n tin u o u s Dra in Cu rren t at Ta m b=25°C
Pu ls e d Dra in Cu rre n t
ID
m A
A
IDM
6
Ga te S o u rce Vo lta g e
VGS
V
± 20
Po w e r Dis s ip a tio n a t Ta m b=25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
700
m W
°C
Tj:Ts tg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN.
MAX. UNIT CONDITIONS .
Dra in -S o u rce Bre akd o w n
Vo lta g e
BVDS S 100
V
ID=1m A, VGS=0V
Ga te-S o u rce Th res h o ld
Vo lta g e
VGS (th )
0.8
2.4
20
V
ID=1m A, VDS= VGS
Ga te-Bo d y Lea ka g e
IGS S
IDS S
n A
VGS=± 20V, VDS=0V
Ze ro Ga te Vo lta g e Dra in
Cu rre n t
1
100
VDS=100V, VGS=0
µA
µA
VDS=80V, VGS=0V, T=125°C(2)
On -S ta te Dra in Cu rre n t(1)
ID(o n )
1.5
A
VDS=25V, VGS=10V
VGS=10V,ID=1A
S ta tic Drain -S o u rce On -S ta te RDS (o n )
Res is ta n ce (1)
4
Ω
Fo rw a rd Tra n s co n d u ctan ce
(1)(2)
g fs
250
m S
VDS=25V,ID=1A
In p u t Ca p a citan ce (2)
Cis s
75
25
p F
p F
Co m m o n S o u rce Ou tp u t
Cap acita n ce (2)
Co s s
VDS=25 V, VGS=0V, f=1MHz
Reve rs e Tra n s fe r
Cap acita n ce (2)
Crs s
8
p F
Tu rn -On De lay Tim e (2)(3)
Ris e Tim e (2)(3)
td (o n )
tr
td (o ff)
tf
7
n s
n s
n s
n s
8
VDD ≈25V, ID=1A
Tu rn -Off De la y Tim e (2)(3)
Fa ll Tim e (2)(3)
13
13
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sam ple test
(3) Switching tim es m easured with 50 Ω source im pedance and <5ns rise tim e on a pulse generator
ZVN2110A
TYPICAL CHARACTERISTICS
VGS=
VGS=
10V
9V
2.0
2.0
1.6
1.2
10V
9V
8V
7V
6V
1.6
1.2
8V
7V
5V
6V
0.8
0.8
0.4
0
5V
4V
3V
0.4
0
4V
3V
100
2
4
6
8
10
0
20
40
60
80
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output Characteristics
Saturation Characteristics
10
2.8
2.4
2.0
1.6
8
6
VDS=25V
VDS=10V
1.2
0.8
0.4
4
2
ID=
1A
500m A
100m A
0
0
0
2
4
6
8
10
0
2
4
6
8
10
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
Voltage Saturation Characteristics
2.4
10
5
2.2
2.0
1.8
1.6
1.4
e
R
c
n
VGS=10V
ta
s
i
s
ID=1 A
e
R
ID=
rce
u
1A
500m A
100m A
o
S
-
n
VGS=VDS
ID=1m A
1.2
1.0
0.8
0.6
Drai
1
1
10
100
-40
80
120
100 140 160 180
-20
0
20 40 60
VGS-Gate Source Voltage (Volts)
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
On-resistance v gate-source voltage
ZVN2110A
TYPICAL CHARACTERISTICS
500
400
500
400
300
300
200
VDS=25V
VDS=25V
200
100
100
0
0
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
VGS-Gate Source Voltage (Volts)
ID(on)- Drain Current (Amps)
Transconductance v drain current
Transconductance v gate-source voltage
16
100
14
ID=1A
80
60
40
20
12
10
8
VDS=
20V
50V
80V
Ciss
6
4
2
0
Coss
Crss
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Q-Charge (nC)
10
20
40
50
30
VDS-Drain Source Voltage (Volts)
Gate charge v gate-source voltage
Capacitance v drain-source voltage
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