ZVN2110G [ZETEX]
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET; N沟道增强型垂直DMOS FET
| 型号： | ZVN2110G |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 文件： | 总3页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN2110G
ISSUE 3 – OCTOBER 1995
✪
FEATURES
D
*
*
6A PULSE DRAIN CURRENT
FAST SWITCHING SPEED
S
D
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
ZVN2110
G
ZVP2110G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
UNIT
V
Dra in -S o u rce Vo lta g e
100
Co n tin u o u s Drain Cu rren t at Ta m b=25°C
Pu ls ed Dra in Cu rre n t
ID
500
m A
A
IDM
6
Ga te S o u rce Vo lta g e
VGS
V
± 20
2
Po w er Dis s ip a tio n a t Ta m b=25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
W
Tj:Ts tg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
BV
100
0.8
V
I =1m A, V =0V
D GS
DSS
V
GS(th)
2.4
V
I =1m A, V = V
DS GS
D
I
0.1 20
nA
V
GS
=± 20V, V =0V
DS
GSS
Zero Gate Voltage Drain Current
I
1
100
V
V
DS
=100V, V =0
=80V, V =0V, T=125°C(2)
GS
µA
µA
DSS
DS GS
On-State Drain Current(1)
I
1.5
2
A
V
=25V, V =10V
D(on)
DS GS
Static Drain-Source On-State
Resistance (1)
R
4
V
=10V, I =1A
Ω
DS(on)
GS D
Forward Transconductance (1)(2)
Input Capacitance (2)
g
250 350
m S
pF
pF
V
=25V, I =1A
fs
DS D
C
59
16
75
25
iss
Com m on Source Output
Capacitance (2)
C
V
=25 V, V =0V, f=1MHz
oss
DS GS
Reverse Transfer Capacitance (2)
Turn-On Delay Tim e (2)(3)
Rise Tim e (2)(3)
C
4
4
4
8
8
8
pF
ns
ns
ns
ns
rss
t
t
t
t
7
d(on)
8
r
V
DD
≈25V, I =1A
D
Turn-Off Delay Tim e (2)(3)
Fall Tim e (2)(3)
13
13
d(off)
f
DRAIN-SOURCE DIODE CHARACTERISTICS
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Dio d e Fo rw a rd Vo lta g e (1)
Reve rs e Re co ve ry Tim e
VS D
TRR
0.82
112
V
IS=0.32A, VGS=0
n s
IF=0.32A, VGS=0, IR=0.1A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
3 - 387
ZVN2110G
TYPICAL CHARACTERISTICS
V
10V
9V
GS=
V
GS=
2.0
2.0
1.6
1.2
10V
9V
8V
7V
6V
1.6
1.2
8V
7V
5V
6V
0.8
0.8
0.4
0
5V
4V
3V
0.4
0
4V
3V
100
2
4
6
8
10
0
20
40
60
80
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output Characteristics
Saturation Characteristics
10
2.8
2.4
2.0
1.6
8
6
V
DS=25V
VDS=10V
1.2
0.8
0.4
4
2
I
D=
1A
500m A
100m A
0
0
0
2
4
6
8
10
0
2
4
6
8
10
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
Voltage Saturation Characteristics
2.4
10
5
2.2
2.0
1.8
1.6
1.4
)
n
o
DS(
e
R
c
n
VGS=10V
ta
s
i
s
ID=1 A
e
R
ID=
rce
u
1A
500m A
100m A
o
S
-
n
V
GS=
VDS
1.2
1.0
0.8
0.6
Drai
ID=1m A
1
1
10
100
-40
80
-20
0
20 40 60
100 140 160 180
120
VGS-Gate Source Voltage (Volts)
T
j-Junction Temperature (°C)
On-resistance v gate-source voltage
Normalised RDS(on) and VGS(th) v Temperature
3 - 388
ZVN2110G
TYPICAL CHARACTERISTICS
500
400
300
500
400
300
200
VDS=25V
VDS=25V
200
100
100
0
0
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
VGS-Gate Source Voltage (Volts)
ID(on)- Drain Current (Amps)
Transconductance v drain current
Transconductance v gate-source voltage
16
100
14
ID=1A
80
60
40
20
12
10
8
VDS=
20V
50V
80V
C
iss
6
4
2
0
C
C
oss
rss
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Q-Charge (nC)
10
20
40
50
30
V
DS-Drain Source Voltage (Volts)
Gate charge v gate-source voltage
Capacitance v drain-source voltage
3 - 389
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