ZVP2106ASMTA [DIODES]
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | ZVP2106ASMTA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件： | 总3页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVP2106A
ISSUE 2 – MARCH 94
FEATURES
*
*
60 Volt VDS
RDS(on)=5Ω
D
G
S
E-Line
TO92 Com patible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
UNIT
V
Dra in -S o u rce Vo ltag e
-60
-280
Co n tin u o u s Dra in Cu rren t at Ta m b=25°C
Pu ls e d Dra in Cu rre n t
ID
m A
A
IDM
-4
Ga te S o u rce Vo lta g e
VGS
V
± 20
Po w e r Dis s ip a tio n a t Ta m b=25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
700
m W
°C
Tj:Ts tg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN. MAX. UNIT CONDITIONS .
Dra in -S o u rce Bre akd o w n
Vo lta g e
BVDS S
-60
V
ID=-1m A, VGS=0V
Ga te-S o u rce Th res h o ld
Vo lta g e
VGS (th )
-1.5
-3.5
20
V
ID=-1m A, VDS= VGS
Ga te-Bo d y Lea ka g e
IGS S
IDS S
n A
VGS=± 20V, VDS=0V
Ze ro Ga te Vo lta g e Dra in
Cu rre n t
-0.5
-100
VDS=-60 V, VGS=0
VDS=-48 V, VGS=0V, T=125°C(2)
µA
µA
On -S ta te Dra in Cu rre n t(1)
ID(o n )
-1
A
VDS=-18 V, VGS=-10V
VGS=-10V,ID=-500m A
S ta tic Drain -S o u rce On -S ta te RDS (o n )
Res is ta n ce (1)
5
Ω
Fo rw a rd Tra n s co n d u ctan ce
(1)(2)
g fs
150
m S
VDS=-18V,ID=-500m A
In p u t Ca p a citan ce (2)
Cis s
100
60
p F
p F
Co m m o n S o u rce Ou tp u t
Cap acita n ce (2)
Co s s
VDS=-18V, VGS=0V, f=1MHz
Reve rs e Tra n s fe r
Cap acita n ce (2)
Crs s
20
p F
Tu rn -On De lay Tim e (2)(3)
Ris e Tim e (2)(3)
td (o n )
tr
td (o ff)
tf
7
n s
n s
n s
n s
15
12
15
VDD ≈-18V, ID=-500m A
Tu rn -Off De la y Tim e (2)(3)
Fa ll Tim e (2)(3)
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sam ple test.
(
3
)
3-417
Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
ZVP2106A
TYPICAL CHARACTERISTICS
-3.5
-2.0
-1.8
-1.6
VGS=
-20V
-18V
-3.0
VGS=
-10V
-14V
-2.5
-2.0
-1.4
-1.2
-12V
-10V
-9V
-8V
-7V
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.5
-1.0
-0.5
0
-9V
-8V
-7V
-6V
-5V
-4V
-3.5V
-6V
-5V
-4V
-50
0
-10
-20
-30
-40
0
-2
-4
-6
-8
-10
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output Characteristics
Saturation Characteristics
-10
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
-8
-6
VDS=-10V
-4
-2
ID=
-1A
-0.5A
-0.25A
0
0
-2
-4
-6
-8
-10
0
-2
-4
-6
-8
-10
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
Voltage Saturation Characteristics
VGS=-5V
-8V -9V 10V
-7V
-6V
10
5
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
R
e
c
n
ta
VGS=-10V
ID=-0.5A
s
i
s
e
e
R
rc
u
o
S
-
n
ai
Dr
VGS=VDS
ID=-1mA
0.6
1
-0.1
-40
120
180
140 160
-20
0
20 40 60 80 100
-1.0
-2.0
ID-Drain Current (Am ps)
Tj-Junction Temperature (°C)
On-resistance v drain current
Normalised RDS(on) and VGS(th) vs Temperature
3-418
ZVP2106A
TYPICAL CHARACTERISTICS
300
250
300
250
VDS=-10V
VDS=-10V
200
150
200
150
100
50
0
100
50
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
0
-2
-4
-6
-8
-10
V
GS-Gate Source Voltage (Volts)
D
I - Drain Current (Amps)
Transconductance v drain current
Transconductance v gate-source voltage
0
-2
-4
100
VDS=
80
60
-30V
-50V
-20V
-6
-8
Ciss
-10
40
20
0
-12
-14
-16
C
oss
Crss
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Q-Charge (nC)
0
-10
-20
-30
-40
-50
V
DS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-419
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