ZVP4525ZTC [DIODES]
250V P-CHANNEL ENHANCEMENT MODE MOSFET; 250V P沟道增强型MOSFET
| 型号： | ZVP4525ZTC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 250V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总9页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZVP4525Z
250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
=-250V; R
=14 ; I =-205mA
DS(ON)
(BR)DSS
D
DESCRIPTION
This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage switching circuits.
SOT89
SOT223 and SOT23-6 versions are also available.
FEATURES
• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• Complementary N-channel Type ZVN4525Z
• SOT89 package
S
APPLICATIONS
D
G
D
• Earth Recall and dialling switches
• Electronic hook switches
• High Voltage Power MOSFET Drivers
• Telecom call routers
Top View
• Solid state relays
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm) QUANTITY
PER REEL
ZVP4525ZTA
ZVP4525ZTC
7
12mm embossed
12mm embossed
1000 units
4000 units
13
DEVICE MARKING
• P52
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
1
ZVP4525Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
250
UNIT
V
V
DSS
Drain-Source Voltage
V
40
Gate Source Voltage
V
GS
Continuous Drain Current (V
(V
=10V; TA=25°C)(a)
=10V; TA=70°C)(a)
I
I
-205
-164
mA
mA
GS
GS
D
D
I
-1
A
A
A
DM
Pulsed Drain Current (c)
-0.75
-1
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
I
I
S
SM
Power Dissipation at T =25°C (a)
A
Linear Derating Factor
P
1.2
9.6
W
mW/°C
D
-55 to +150
°C
Operating and Storage Temperature Range
T :T
j stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
103
UNIT
°C/W
°C/W
Junction to Ambient (a)
R
θJA
Junction to Ambient (b)
NOTES
50
R
θJA
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
2
ZVP4525Z
CHARACTERISTICS
1
100m
10m
1m
1.2
1.0
0.8
0.6
0.4
RDS(on)
Limit
DC
1s
100ms
10ms
1ms
Single Pulse
Tamb=25°C
0.2
0.0
100µs
100
1
10
0
20
40
60
80
100 120 140 160
VCE Collector-Emitter Voltage (V)
Safe Operating Area
Temperature (°C)
Derating Curve
120
100
80
60
40
20
0
100
10
1
Tamb=25°C
Single Pulse
Tamb=25°C
D=0.5
Single Pulse
D=0.05
D=0.2
D=0.1
1
0.1
100µ 1m
10m 100m
10
100
1k
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
3
ZVP4525Z
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
-250
-285
V
I
=-1mA, V
=0V
GS
(BR)DSS
D
Zero Gate Voltage Drain Current
Gate-Body Leakage
I
I
-30
1
-500
nA
V
=-250V, V
= 40V, V
=0V
DSS
GSS
DS
GS
DS
100 nA
V
=0V
GS
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
V
R
-0.8
80
-1.5
-2.0
V
I
=-1mA, V
= V
DS GS
GS(th)
DS(on)
D
10
13
14
18
V
I
V
I
=-10V,
GS
Ω
Ω
=-200mA
D
=-3.5V,
GS
=-100mA
D
Forward Transconductance (3)
DYNAMIC (3)
g
200
mS
V
=-10V,I =-0.15A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
73
pF
pF
pF
iss
V
=-25 V, V
=0V,
DS
GS
12.8
3.91
f=1MHz
oss
rss
t
t
t
t
1.53
3.78
17.5
7.85
2.45
0.22
0.45
ns
ns
ns
ns
nC
nC
nC
d(on)
V
A
R
=-30V, I =-200m
D
DD
r
=50Ω, V
=-10V
GS
G
Turn-Off Delay Time
Fall Time
d(off)
f
(refer to test circuit)
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Q
Q
Q
3.45
0.31
0.63
g
V
=-25V,V
=-10V,
GS
DS
ID=-200mA(refer to
test circuit)
gs
gd
V
0.97
V
T =25°C, I =-200mA,
SD
j
S
V
=0V
GS
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t
205
21
290
29
ns
T =25°C, I =-200mA,
j F
rr
di/dt=100A/μs
Q
nC
rr
(1) Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
ZVP4525Z
TYPICAL CHARACTERISTICS
0.6
10V
5V
T = 25°C
T = 150°C
1.0
0.8
0.6
0.4
0.2
0.0
10V
0.4
5V
VGS
4V
VGS
4V
3.5V
3V
0.2
3.5V
3V
2.5V
2V
2.5V
2V
0.0
0
5
10
15
0
5
10
15
-VDS Drain-Source Voltage (V)
Output Characteristics
-VDS Drain-Source Voltage (V)
Output Characteristics
1
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
ID = 200mA
T = 25°C
RDS(on)
T = 150°C
0.1
VGS(th)
VGS = VDS
ID = 1mA
VDS = 10V
2
3
4
5
-50
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Normalised Curves v Temperature
Typical Transfer Characteristics
100
VGS
2V
3V
2.5V
1
3.5V
T = 150°C
4V
0.1
5V
10V
T = 25°C
0.8
10
0.01
T = 25°C
1
0.4
0.6
1.0
1.2
0.01
0.1
-ID Drain Current (A)
On-Resistance v Drain Current
-VDS Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
ZVP4525Z
CHARACTERISTICS
175
150
125
100
75
10
8
VGS = 0V
f = 1MHz
ID = 200mA
CISS
COSS
VDS = 25V
CRSS
6
4
50
2
25
0
0
0.1
1
10
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain - Source Voltage (V)
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
ZVP4525Z
TEST CIRCUITS
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
ZVP4525Z
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in thisdesign/application note are offered as design ideas. It is the responsibility ofthe user toensure thatthe circuit is fitforthe user's
application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with
respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence),
breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use
of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating
to the products or services concerned.
Terms and Conditions
All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the
terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales
channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of
hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and
ELV directives.
Product status key:
"Preview"Future device intended for production at some point. Samples may be available
"Active"Product status recommended for new designs
"Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect
"Not recommended for new designs"Device is still in production to support existing designs and production
"Obsolete"Production has been discontinued
Datasheet status key:
"Draft version"This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
"Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to
the test conditions and specifications may occur, at any time and without notice.
"Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and
without notice.
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
52
ZVP4525Z
PAD LAYOUT DETAILS
PACKAGE DIMENSIONS
DIM
Millimetres
Min
Inches
2.4
Max
4.60
4.25
1.60
2.60
0.45
0.55
1.80
2.85
3.10
1.60
Min
0.173
0.150
0.550
-
Max
A
B
C
D
F
4.40
3.75
1.40
-
0.181
0.167
0.630
0.102
0.018
0.022
0.072
0.112
0.122
0.063
4.0
1.5
0.28
0.38
1.50
2.60
2.90
1.40
0.011
0.015
0.060
0.102
0.114
0.055
G
H
K
L
1.2
1.0
3.2
1.2
SOT89 pattern.
Minimum Pad Size (dimensions in mm)
N
A
H
C
K
D B
G
F
N
L
© Zetex Semiconductors plc 2007
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Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
53
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