ZX5T1951G [DIODES]

60V PNP MEDIUM POWER TRANSISTOR IN SOT223;
ZX5T1951G
型号: ZX5T1951G
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

60V PNP MEDIUM POWER TRANSISTOR IN SOT223

文件: 总7页 (文件大小:196K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
A Product Line of  
Diodes Incorporated  
Green  
ZX5T1951G  
60V PNP MEDIUM POWER TRANSISTOR IN SOT223  
Features  
Mechanical Data  
BVCEO > -60V  
Case: SOT223  
IC = -6A Continuous Collector Current  
Case Material: Molded Plastic, "Green" Molding Compound;  
UL Flammability Rating 94V-0  
Low Saturation Voltage VCE(sat) < -95mV max @ -1A  
RCE(sat) = 40mfor a low Equivalent On-Resistance  
hFE Specified up to -10A for a High Gain Hold-Up  
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. "Green" Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish - Matte Tin Plated Leads; Solderable per  
MIL-STD-202, Method 208  
Weight: 0.112 grams (Approximate)  
Applications  
Motor Driving  
DC-DC Modules  
Backlight Inverters  
Actuator, Relay, and Solenoid Drivers  
SOT223  
C
E
C
B
C
B
E
Top View  
Top View  
Pin-Out  
Device Symbol  
Ordering Information (Note 4)  
Product  
ZX5T1951GTA  
Marking  
ZX5T1951  
Reel size (inches)  
7
Tape width (mm)  
12  
Quantity per reel  
1,000  
Notes:  
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-Free, "Green"  
and Lead-Free.  
3. Halogen- and Antimony-Free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
SOT223  
ZX5T1951 = Product Type Marking Code  
YWW = Date Code Marking  
ZX5T  
1951  
Y or Y = Last Digit of Year (ex: 5= 2015)  
WW or WW = Week Code (01~53)  
1 of 7  
www.diodes.com  
March 2015  
© Diodes Incorporated  
ZX5T1951G  
Datasheet Number: DS35304 Rev. 5 - 2  
A Product Line of  
Diodes Incorporated  
ZX5T1951G  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
VCBO  
VCES  
VCEO  
VEBO  
IC  
Value  
-90  
-90  
-60  
-7  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
Continuous Collector Current (Note 5)  
Peak Pulse Current  
-6  
A
-15  
-1  
A
ICM  
Base Current  
A
IB  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
3.0  
24  
Unit  
(Note 5)  
(Note 6)  
W
mW /°C  
Power Dissipation  
Linear Derating Factor  
PD  
1.6  
12.8  
(Note 5)  
(Note 6)  
(Note 7)  
42  
78  
RθJA  
RθJA  
Thermal Resistance, Junction to Ambient  
°C/W  
°C  
Thermal Resistance Junction to Lead  
12.3  
RθJL  
Operating and Storage Temperature Range  
-55 to +150  
TJ, TSTG  
ESD Ratings (Note 8)  
Characteristic  
Symbol  
Value  
Unit  
JEDEC Class  
Electrostatic Discharge - Human Body Model  
ESD HBM  
4,000  
V
3A  
Electrostatic Discharge - Machine Model  
ESD MM  
400  
V
C
Notes:  
5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under  
still air conditions whilst operating in a steady-state.  
6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.  
7. Thermal resistance from junction to solder-point (at the end of the collector lead).  
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
2 of 7  
www.diodes.com  
March 2015  
© Diodes Incorporated  
ZX5T1951G  
Datasheet Number: DS35304 Rev. 5 - 2  
A Product Line of  
Diodes Incorporated  
ZX5T1951G  
Thermal Characteristics  
V
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
CE(sat)  
10  
Limit  
Mounted on 52x52x1.6(mm)  
FR4 PCB 2oz coppor  
DC  
1
1s  
100ms  
100m  
10ms  
1ms  
Single Pulse. T =25°C  
Mounted on 25x25x1.6(mm)  
amb  
100µs  
52x52x1.6(mm) borad  
FR4 PCB 2oz coppor  
10m  
100m  
1
10  
100  
0
20 40 60 80 100 120 140 160  
Temperature (°C)  
-VCE Collector-Emitter Voltage (V)  
Safe Operating Area  
Derating Curve  
Mounted on 52x52x1.6(mm)  
Single Pulse. T =25°C  
40  
30  
20  
10  
0
amb  
FR4 PCB 2oz coppor  
)
52x52x1.6(mm) borad  
100  
10  
1
D=0.5  
Single Pulse  
D=0.2  
D=0.05  
D=0.1  
100µ 1m 10m 100m  
1
10  
100  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Width (s)  
Pulse Power Dissipation  
3 of 7  
www.diodes.com  
March 2015  
© Diodes Incorporated  
ZX5T1951G  
Datasheet Number: DS35304 Rev. 5 - 2  
A Product Line of  
Diodes Incorporated  
ZX5T1951G  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 9)  
Emitter-Base Breakdown Voltage  
Collector-Base Cut-Off Current  
Collector-Emitter Cut-Off Current  
Emitter Cutoff Current  
Symbol  
BVCBO  
BVCES  
BVCEO  
BVEBO  
ICBO  
Min  
Typ  
-120  
-120  
-80  
-8  
Max  
-
Unit  
V
Test Condition  
IC = -100µA  
-90  
-90  
-
V
IC = -100µA  
-60  
-
V
IC = -10mA  
-7  
-
V
IE = -100µA  
-
<1  
-50  
-50  
-10  
-
nA  
nA  
nA  
VCB = -72V  
-
<1  
ICES  
VCB = -72V  
-
<1  
IEBO  
VEB = -6V  
100  
240  
180  
70  
IC = -10mA, VCE = -2V  
IC = -2A, VCE = -2V  
100  
300  
-
Static Forward Current Transfer Ratio (Note 9)  
Collector-Emitter Saturation Voltage (Note 9)  
-
hFE  
40  
5
-
I
C = -5A, VCE = -2V  
14  
-
IC = -10A, VCE = -2V  
IC = -100mA, IB = -10mA  
IC = -1A, IB = -100mA  
IC = -2A, IB = -200mA  
IC = -5A, IB = -500mA  
IC = -5A, IB = -500mV  
IC = -5A, VCE = -2V  
-16  
-55  
-85  
-200  
-1  
-30  
-95  
-130  
-260  
-1.15  
-1.0  
70  
-
mV  
VCE(sat)  
-
-
Base-Emitter Saturation Voltage (Note 9)  
Base-Emitter Turn-On Voltage (Note 9)  
Output Capacitance (Note 9)  
-
V
V
VBE(sat)  
VBE(on)  
Cobo  
-
-0.89  
33  
-
pF  
VCB = -10V. f = 1MHz  
VCE = -10V, IC = -100mA  
f = 50MHz  
Transition Frequency  
Switching Time  
-
120  
-
MHz  
ns  
fT  
-
-
33  
80  
ton  
toff  
VCC = -10V, IC = -2A  
IB1 = -IB2 = -200mA  
215  
300  
Note:  
9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.  
4 of 7  
www.diodes.com  
March 2015  
© Diodes Incorporated  
ZX5T1951G  
Datasheet Number: DS35304 Rev. 5 - 2  
A Product Line of  
Diodes Incorporated  
ZX5T1951G  
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
1
100m  
10m  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Tamb=25°C  
IC/IB=10  
IC/IB=100  
IC/IB=50  
IC/IB=20  
100°C  
25°C  
IC/IB=10  
-55°C  
1m  
10m  
100m  
1
10  
100m  
1
10  
- IC Collector Current (A)  
VCE(SAT) v IC  
- IC Collector Current (A)  
VCE(SAT) v IC  
1.2  
1.0  
0.8  
0.6  
0.4  
VCE=2V  
IC/IB=10  
350  
300  
250  
200  
150  
100  
50  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
100°C  
-55°C  
25°C  
25°C  
-55°C  
100°C  
1
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
10  
- IC Collector Current (A)  
- IC Collector Current (A)  
hFE v IC  
VBE(SAT) v IC  
1.2  
1.0  
0.8  
0.6  
0.4  
VCE=2V  
-55°C  
25°C  
100°C  
1m  
10m  
100m  
1
10  
- IC Collector Current (A)  
VBE(ON) v IC  
5 of 7  
www.diodes.com  
March 2015  
© Diodes Incorporated  
ZX5T1951G  
Datasheet Number: DS35304 Rev. 5 - 2  
A Product Line of  
Diodes Incorporated  
ZX5T1951G  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.  
SOT223  
Dim Min Max Typ  
A
1.55 1.65 1.60  
A1 0.010 0.15 0.05  
b
b1  
C
0.60 0.80 0.70  
2.90 3.10 3.00  
0.20 0.30 0.25  
6.45 6.55 6.50  
3.45 3.55 3.50  
6.90 7.10 7.00  
D
E
E1  
e
-
-
-
-
4.60  
2.30  
e1  
L
0.85 1.05 0.95  
0.84 0.94 0.89  
All Dimensions in mm  
Q
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
Dimensions Value (in mm)  
C
C1  
X
X1  
Y
2.30  
6.40  
1.20  
3.30  
1.60  
1.60  
8.00  
Y1  
Y2  
6 of 7  
www.diodes.com  
March 2015  
© Diodes Incorporated  
ZX5T1951G  
Datasheet Number: DS35304 Rev. 5 - 2  
A Product Line of  
Diodes Incorporated  
ZX5T1951G  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2015, Diodes Incorporated  
www.diodes.com  
7 of 7  
www.diodes.com  
March 2015  
© Diodes Incorporated  
ZX5T1951G  
Datasheet Number: DS35304 Rev. 5 - 2  

相关型号:

ZX5T1951GTA

60V PNP MEDIUM POWER TRANSISTOR IN SOT223
DIODES

ZX5T1951G_15

60V PNP MEDIUM POWER TRANSISTOR IN SOT223
DIODES

ZX5T2E6

20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
DIODES

ZX5T2E6TA

20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
DIODES

ZX5T2E6TC

20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
DIODES

ZX5T3Z

40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
ZETEX

ZX5T3Z

40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER
DIODES

ZX5T3ZQTA

Small Signal Bipolar Transistor
DIODES

ZX5T3ZQTC

Small Signal Bipolar Transistor
DIODES

ZX5T3ZTA

40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
ZETEX

ZX5T3ZTA

40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER
DIODES

ZX5T3ZTC

Small Signal Bipolar Transistor
DIODES