ZXM66P03N8TA [DIODES]
30V P-CHANNEL ENHANCEMENT MODE MOSFET; 30V P沟道增强型MOSFET
| 型号： | ZXM66P03N8TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXM66P03N8
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
=-30V; R
=0.025 ; I =-7.9A
DS(ON)
(BR)DSS
D
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
TAPE WIDTH
QUANTITY
PER REEL
ZXM66P03N8TA
ZXM66P03N8TC
7”
12mm
12mm
500 units
2500 units
D
S
S
S
D
D
13”
DEVICE MARKING
• ZXM
Top View
66P03
ISSUE 1 - JANUARY 2006
SEMICONDUCTORS
1
ZXM66P03N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
-30
UNIT
Drain-Source Voltage
Gate- Source Voltage
V
V
V
A
DSS
V
20
GS
Continuous Drain Current V
=-10V; T =25°C(b)
I
-7.9
-6.3
-6.25
GS
A
D
V
=-10V; T =70°C(b)
GS
A
V
=-10V; T =25°C(a)
GS
A
Pulsed Drain Current (c)
I
I
-28
-4.1
-28
A
A
A
DM
I
S
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
SM
Power Dissipation at T =25°C (a)
A
P
1.56
12.5
W
mW/°C
D
Linear Derating Factor
Power Dissipation at T =25°C (b)
A
P
2.5
20
W
mW/°C
D
Linear Derating Factor
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
80
UNIT
°C/W
°C/W
Junction to Ambient (a)
R
θJA
Junction to Ambient (b)
NOTES
50
R
θJA
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature.
ISSUE 1 - JANUARY 2006
SEMICONDUCTORS
2
ZXM66P03N8
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
-30
V
I
=-250µA, V
=0V
(BR)DSS
D
GS
=-24V, V =0V
GS
I
-1
V
µA
DSS
DS
I
-100 nA
V
V
= 20V, V
=0V
DS
GSS
GS
Gate-Source Threshold Voltage
V
-1.0
I
V
=-250µA, V
GS
=
GS(th)
DS
D
Static Drain-Source On-State
Resistance (1)
R
0.025
0.035
V
V
=-10V, I =-5.6A
D
Ω
Ω
DS(on)
GS
GS
=-4.5V, I =-2.8A
D
Forward Transconductance (1)(3)
DYNAMIC (3)
g
14.4
S
V
=-15V,I =-5.6A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
1979
743
pF
pF
pF
iss
V
=-25 V, V
=0V,
DS
GS
f=1MHz
oss
rss
279
t
t
t
t
7.6
16.3
94.6
39.6
36
ns
ns
ns
ns
nC
d(on)
V
R
=-15V, I =-5.6A
D
r
DD
=6.2Ω, V
=-10V
GS
G
Turn-Off Delay Time
Fall Time
d(off)
f
Gate Charge
Q
V
=-15V,V
=-5V
g
DS
GS
GS
ID=-5.6A
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Q
Q
Q
62.5
4.9
nC
nC
nC
g
V
=-15V,V
=-10V
DS
gs
gd
ID=-5.6A
19.6
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
-0.95
V
T =25°C, I =-5.6A,
GS
SD
j
S
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
t
35
ns
T =25°C, I =-5.6A,
j F
rr
di/dt= 100A/µs
Q
39.9
nC
rr
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JANUARY 2006
SEMICONDUCTORS
3
ZXM66P03N8
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
Min
Min
4.80
Max
4.98
Max
A
B
C
D
E
F
0.189
0.196
1.27 BSC
0.53 REF
0.05 BSC
0.02 REF
0.36
3.81
1.35
0.10
5.80
0°
0.46
0.014
0.15
0.05
0.004
0.23
0°
0.018
3.99
1.75
0.25
6.20
8°
0.157
0.07
0.010
0.24
8°
G
J
K
L
0.41
1.27
0.016
0.050
© Zetex Semiconductors plc 2006
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Americas
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Corporate Headquarters
Zetex GmbH
Zetex Inc
Zetex (Asia) Ltd
Zetex Semiconductors plc
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United Kingdom
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Germany
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USA
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Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - JANUARY 2006
SEMICONDUCTORS
4
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