ZXMD63P02XTC [DIODES]
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET; 双路20V P沟道增强型MOSFET型号: | ZXMD63P02XTC |
厂家: | DIODES INCORPORATED |
描述: | DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET |
文件: | 总7页 (文件大小:202K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ZXMD63P02X
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
MSOP8
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXMD63P02XTA
ZXMD63P02XTC
7
12mm embossed
12mm embossed
1000 units
4000 units
Top View
13
DEVICE MARKING
•
ZXM63P02
ISSUE 1 - JUNE 2004
1
ZXMD63P02X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDSS
LIMIT
-20
UNIT
Drain-Source Voltage
Gate- Source Voltage
V
V
A
VGS
± 12
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)(d) ID
(VGS=4.5V; TA=70°C)(b)(d)
-1.7
-1.35
Pulsed Drain Current (c)(d)
IDM
-9.6
-1.4
-9.6
A
A
A
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
IS
ISM
PD
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
0.87
6.9
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD
1.04
8.3
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
RθJA
VALUE
143
UNIT
°C/W
°C/W
°C/W
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
RθJA
100
RθJA
120
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - JUNE 2004
2
ZXMD63P02X
CHARACTERISTICS
100
10
1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Refer Note (a)
Refer Note (b)
Refer Note (a)
DC
1s
100ms
10ms
1ms
100µs
0.1
0
0.1
1
10
100
0
20
40
60
80 100 120 140 160
V
- Drain-Source Voltage (V)
T - Temperature (°)
DS
Safe Operating Area
Derating Curve
120
100
80
60
40
20
0
160
140
120
100
80
Refer Note (b)
Refer Note (a)
D=0.5
D=0.5
60
40
D=0.2
D=0.2
D=0.1
D=0.05
20
D=0.1
D=0.05
Single Pulse
Single Pulse
0
0.0001 0.001
0.01
0.1
1
10
100
0.0001 0.001 0.01
0.1
1
10
100 1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
ISSUE 1 - JUNE 2004
3
ZXMD63P02X
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V(BR)DSS -20
IDSS
V
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
VGS=± 12V, VDS=0V
-1
µA
nA
V
IGSS
±100
Gate-Source Threshold Voltage
VGS(th)
RDS(on)
gfs
-0.7
1.3
ID=-250µA, VDS
=
VGS
Static Drain-Source On-State Resistance
(1)
0.27
0.40
VGS=-4.5V, ID=-1.2A
VGS=-2.7V, ID=-0.6A
Ω
Ω
Forward Transconductance (3)
DYNAMIC (3)
S
VDS=-10V,ID=-0.6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
290
120
50
pF
pF
pF
VDS=-15 V, VGS=0V,
f=1MHz
td(on)
tr
td(off)
tf
3.4
ns
ns
ns
ns
nC
nC
nC
9.6
V
DD =-10V, ID=-1.2A
RG=6.0Ω, RD=8.3Ω
(Refer to test
circuit)
Turn-Off Delay Time
Fall Time
16.4
20.4
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Qg
5.25
1.0
VDS=-16V,VGS=-4.5V,
ID=-1.2A
(Refer to test
circuit)
Qgs
Qgd
2.25
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
-0.95
V
Tj=25°C, IS=-1.2A,
VGS=0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
trr
21.7
9.6
ns
Tj=25°C, IF=-1.2A,
di/dt= 100A/µs
Qrr
nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
4
ZXMD63P02X
TYPICAL CHARACTERISTICS
10
10
3.5V
3V
5V
4.5V
4V
5V
4.5V
4V
3.5V
3V
+25 C
+150°C
2.5V
2.5V
-VGS
-VGS
2V
2V
1
1
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-VDS - Drain-Source Voltage (V)
-VDS - Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VDS=-10V
RDS(on)
VGS=-4.5V
ID=-1.2A
T=150 C
T=25 C
1
VGS=VDS
ID=-250uA
VGS(th)
0.1
1
1.5
2
2.5
3
3.5
4
4.5
-100
-50
0
50
100
150
200
-VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (°C)
Typical Transfer Characteristics
Normalised R
and V
GS(th)
DS(on)
v Temperature
10
10
1
1
T=150°C
T=25°C
0.1
VGS=-3V
VGS=-5V
0.1
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-ID - Drain Current (A)
-VSD - Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 1 - JUNE 2004
5
ZXMD63P02X
TYPICAL CHARACTERISTICS
700
600
500
400
300
200
100
0
5
Vgs=0V
f=1Mhz
ID=-1.2A
4.5
4
3.5
3
VDS=-16V
Ciss
Coss
Crss
2.5
2
1.5
1
0.5
0
0.1
1
10
100
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-VDS - Drain Source Voltage (V)
Q -Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Gate Charge Test Circuit
Basic Gate Charge Waveform
Switching Time Waveforms
Switching Time Test Circuit
ISSUE 1 - JUNE 2004
6
ZXMD63P02X
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
MIN
D
MIN
MAX
MAX
0.043
0.006
0.016
0.009
0.122
BSC
A
A1
B
1.10
0.15
0.40
0.23
3.10
BSC
3.10
BSC
0.70
6°
8
1
7
2
6
3
5
4
0.05
0.25
0.13
2.90
0.65
2.90
4.90
0.40
0°
0.002
0.010
0.005
0.114
0.0256
0.114
0.193
0.016
0°
C
e X 6
D
e
θ°
E
0.122
BSC
L
B
C
H
L
0.028
6°
Conforms to JEDEC MO-187 Iss A
q°
PAD LAYOUT DETAILS
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
agents and distributors in
major countries world-wide
Zetex plc 1999
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - JUNE 2004
7
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DIODES
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