ZXMHC3A01N8 [DIODES]
30V SO8 Complementary enhancement mode MOSFET H-Bridge; 30V SO8互补增强型MOSFET的H桥
| 型号： | ZXMHC3A01N8 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V SO8 Complementary enhancement mode MOSFET H-Bridge |
| 文件： | 总11页 (文件大小：721K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXMHC3A01N8
30V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
ID
Device
V(BR)DSS
QG
RDS(on)
TA= 25°C
125mΩ @ VGS= 10V
180mΩ @ VGS= 4.5V
210mΩ @ VGS= -10V
330mΩ @ VGS= -4.5V
2.7A
N-CH
30V
3.9nC
2.2A
-2.1A
-1.6A
P-CH
-30V
5.2nC
P1S/P2S
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
P1G
P2G
Features
P1D/N1D
P2D/N2D
•
2 x N + 2 x P channels in a SOIC package
Applications
N1G
N2G
•
DC Motor control
DC-AC Inverters
•
N1S/N2S
Ordering information
Device
Reel size Tape width Quantity
(inches)
(mm)
per reel
ZXMHC3A01N8TC
13
12
2,500
Device marking
ZXMHC
3A01
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ZXMHC3A01N8
Absolute maximum ratings
Parameter
Symbol
N-
P-
Unit
channel channel
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
30
-30
V
V
±20
±20
(b)
(b)
(a)
(f)
2.72
2.18
2.17
2.21
-2.06
-1.65
-1.64
-1.67
A
ID
Continuous Drain current @ VGS= 10V; TA=25°C
@ VGS= 10V; TA=70°C
@ VGS= 10V; TA=25°C
@ VGS= 10V; TL=25°C
(c)
IDM
11.7
1.60
11.7
-8.84
-1.60
-8.84
A
A
A
Pulsed Drain current @ VGS= 10V; TA=25°C
(b)
Continuous Source current (Body diode) at TA =25°C
IS
(c)
Pulsed Source current (Body diode) at TA =25°C
ISM
PD
(a)
0.87
6.94
1.36
10.9
0.90
7.19
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
(b)
W
mW/°C
Power dissipation at TA =25°C
P
D
P
D
Linear derating factor
(f)
W
mW/°C
Power dissipation at TL =25°C
Linear derating factor
T , T
j
Operating and storage temperature range
-55 to 150
stg
°C
Thermal resistance
Parameter
Symbol
Value
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
(a)
R
θJA
144
Junction to ambient
(b)
R
θJA
92
Junction to ambient
(d)
R
θJA
106
254
139
Junction to ambient
(e)
R
θJA
Junction to ambient
(f)
R
θJL
Junction to lead
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.
(b) Same as note (a), except the device is measured at t ≤ 10 sec.
(c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the
maximum junction temperature.
(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still
air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when
operating in a steady-state condition with one active die.
(e) For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when
operating in a steady-state condition with one active die.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state
condition with one active die.
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ZXMHC3A01N8
Thermal characteristics
RDS(ON)
10
RDS(ON)
10
1
Limited
Limited
1
DC
DC
1s
1s
100ms
100m
100ms
100m
10m
10ms
10ms
1ms
1ms
Note (a)
Note (a)
100us
10
100us
10
10m
Single Pulse, Tamb=25°C
1
Single Pulse, Tamb=25°C
1
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
1.0
140
One Active Die
25 x 25mm 1oz
120
100
Any one
active die
D=0.5
80
0.5
60
Single Pulse
D=0.05
D=0.1
10
D=0.2
40
20
0
0.0
100µ 1m 10m 100m
1
100
1k
0
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Derating Curve
One Active Die
Single Pulse
100
10
1
T
amb=25°C
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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ZXMHC3A01N8
N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source breakdown
voltage
30
V
V(BR)DSS
ID = 250μA, VGS= 0V
Zero Gate voltage Drain
current
IDSS
0.5
µA
nA
VDS= 30V, VGS= 0V
VGS= ±20V, VDS= 0V
ID= 250μA, VDS= VGS
IGSS
Gate-Body leakage
±100
Gate-Source threshold
voltage
VGS(th)
1.0
3.0
V
Static Drain-Source
VGS= 10V, ID= 2.5A
VGS= 4.5V, ID= 2.0A
0.125
0.180
RDS(on)
(a)
Ω
on-state resistance
Forward
gfs
(a) (c)
3.5
S
VDS= 15V, ID= 2.5A
Transconductance
Dynamic
(c)
Capacitance
190
38
Input capacitance
Output capacitance
Ciss
pF
pF
VDS= 25V, VGS= 0V
Coss
f= 1MHz
Reverse transfer
capacitance
Crss
20
pF
(b) (c)
Switching
Turn-on-delay time
Rise time
1.7
2.3
6.6
2.9
ns
ns
ns
ns
td(on)
tr
td(off)
tf
VDD= 15V, VGS= 10V
ID= 2.5A
Turn-off delay time
Fall time
RG ≅ 6.0Ω,
(c)
Gate charge
Total Gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
3.9
0.6
0.9
nC
nC
nC
Qg
VDS=15V, VGS= 10V
ID= 2.5A
Qgs
Qgd
(a)
IS= 1.25A, VGS= 0V
Diode forward voltage
0.95
V
VSD
trr
(c)
17.7
13.0
ns
nC
Reverse recovery time
IS= 2.5A, di/dt= 100A/μs
(c)
Qrr
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
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ZXMHC3A01N8
N-channel typical characteristics
T =150°C
10V
7V
10V
5V
7V
5V
T =25°C
10
1
10
1
4.5V
4.5V
4V
4V
3.5V
3.5V
3V
3V
2.5V
VGS
VGS
0.1
0.1
2.5V
2V
0.1
1
10
0.1
1
10
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
10
1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS =10V
ID =2.5A
VDS =10V
RDS(on)
T =150°C
VGS(th)
T =25°C
3.0
VGS =VDS
ID =250uA
0.1
2.0
2.5
3.5
4.0
4.5
5.0
-50
0
50
100
150
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
Tj Junction Temperature (°C)
Normalised Curves v Temperature
3.5V
4V
VGS
3V
2.5V
10
T =150°C
1
4.5V
5V
1
7V
10V
T =25°C
0.1
0.1
0.4
T =25°C
0.1
0.6
0.8
1.0
1.2
1
10
ID Drain Current (A)
On-Resistance v Drain Current
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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ZXMHC3A01N8
N-channel typical characteristics –continued
300
10
8
VGS =0V
f =1MHz
ID =2.5A
250
200
150
100
50
6
CISS
COSS
VDS =15V
4
CRSS
2
0
0
0
1
2
3
4
0.1
1
10
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Test circuits
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
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ZXMHC3A01N8
P-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source breakdown
voltage
-30
V
V(BR)DSS
ID = -250μA, VGS= 0V
Zero Gate voltage Drain
current
IDSS
-0.5
µA
nA
VDS= -30V, VGS= 0V
VGS= ±20V, VDS= 0V
ID= -250μA, VDS= VGS
IGSS
Gate-Body leakage
±100
Gate-Source threshold
voltage
VGS(th)
-1.0
-3.0
V
Static Drain-Source
VGS= -10V, ID= -1.4A
VGS= -4.5V, ID= -1.1A
0.210
0.330
RDS(on)
(a)
Ω
on-state resistance
Forward
gfs
(a) (c)
2.5
S
VDS= -15V, ID= -1.4A
Transconductance
Dynamic
(c)
Capacitance
204
Input capacitance
Output capacitance
Ciss
pF
pF
VDS= -15V, VGS= 0V
Coss
39.8
f= 1MHz
Reverse transfer
capacitance
Crss
25.8
pF
(b) (c)
Switching
Turn-on-delay time
Rise time
1.2
2.3
ns
ns
ns
ns
td(on)
tr
td(off)
tf
VDD= -15V, VGS= -10V
ID= -1.0A
Turn-off delay time
Fall time
12.1
7.5
RG ≅ 6.0Ω
(c)
Gate charge
Total Gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
5.2
0.7
0.9
nC
nC
nC
Qg
VDS= -15V, VGS= -10V
ID= -1.4A
Qgs
Qgd
(a)
IS= -1.5A, VGS= 0V
Diode forward voltage
-0.85
19
-0.95
V
VSD
trr
(c)
ns
nC
IS= -0.95A,
Reverse recovery time
(c)
di/dt= 100A/μs
15
Qrr
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
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ZXMHC3A01N8
P-channel typical characteristics
T =25°C
10V
T =150°C
10V
5V
10
1
10
1
5V
4V
4V
3.5V
3V
3.5V
3V
2.5V
2.5V
-VGS
2V
2V
0.1
0.01
0.1
0.01
-VGS
1.5V
0.1
1
10
0.1
1
10
-VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
VGS =-10V
ID =-1.4A
RDS(on)
T =150°C
1
T =25°C
VGS(th)
VGS =VDS
ID =-250uA
0.1
-VDS =10V
1
2
3
4
5
-50
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
2V
10
T =25°C
100
10
1
-VGS
2.5V
T =150°C
1
3V
3.5V
4V
T =25°C
0.1
5V
10V
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
-VSD Source-Drain Voltage (V)
-ID Drain Current (A)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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ZXMHC3A01N8
P-channel typical characteristics –continued
300
250
200
150
100
50
10
VGS =0V
f =1MHz
ID =-1.4A
8
6
4
2
0
CISS
COSS
CRSS
VDS =-15V
0
0.1
1
10
0
2
4
6
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test circuits
Current
regulator
QG
50k
Same as
D.U.T
0.2F
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
Pulse width Ͻ 1S
Duty factor 0.1%
tr
td(off)
tr
td(on)
t(on)
t(on)
Switching time waveforms
Switching time test circuit
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ZXMHC3A01N8
Packaging details - SO8
DIM
Inches
Min.
Millimeters
DIM
Inches
Min. Max.
0.050 BSC
Millimeters
Max.
Max.
0.069
0.010
0.197
0.244
0.157
0.050
Min.
Max.
1.75
0.25
5.00
6.20
4.00
1.27
Min.
A
A1
D
0.053
0.004
0.189
0.228
0.150
0.016
1.35
0.10
4.80
5.80
3.80
0.40
e
b
c
θ
-
1.27 BSC
0.013
0.020
0.33
0.51
0.008
0.010
0.19
0.25
H
0°
-
8°
-
0°
-
8°
E
-
-
L
-
-
-
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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ZXMHC3A01N8
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DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS
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