ZXMN10A07F [DIODES]
100V N-CHANNEL ENHANCEMENT MODE MOSFET; 100V N沟道增强型MOSFET
| 型号： | ZXMN10A07F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN10A07F
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
V
= 100V : R
= 0.7
I = 0.8A
D
DS(on)
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage power management applications.
FEATURES
SOT23
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
•
•
•
•
DC-DC converters
Power Management functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
PINOUT
ZXMN10A07FTA
ZXMN10A07FTC
7”
8mm
8mm
3000 units
13”
10000 units
DEVICE MARKING
•
7N1
Top View
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S E M IC O N D U C T O R S
ZXMN10A07F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
100
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
V
V
A
DSS
GS
(b)
(b)
(a)
Continuous Drain Current @ V =10V; T =25°C
I
0.8
0.6
0.7
GS
GS
A
A
A
D
@ V =10V; T =70°C
@ V =10V; T =25°C
GS
(c)
Pulsed Drain Current
I
I
I
3.5
0.5
3.5
A
A
A
DM
S
(b)
Continuous Source Current (Body Diode)
(c)
Pulsed Source Current (Body Diode)
SM
(a)
Power Dissipation at T =25°C
A
Linear Derating Factor
P
625
5
mW
mW/°C
D
(b)
Power Dissipation at T =25°C
A
Linear Derating Factor
P
806
6.4
mW
mW/°C
D
Operating and Storage Temperature Range
T ;T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
200
UNIT
°C/W
°C/W
(a)
Junction to Ambient
R
R
⍜JA
⍜JA
(b)
Junction to Ambient
155
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t Յ 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
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S E M IC O N D U C T O R S
ZXMN10A07F
CHARACTERISTICS
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S E M IC O N D U C T O R S
ZXMN10A07F
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
S YMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS
S TATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
100
V
I =250A, V =0V
D GS
(BR)DSS
I
I
1
A
nA
V
V
=100V, V =0V
GS
DSS
DS
GS
100
4.0
V
=±20V, V =0V
GSS
DS
Gate-Source Threshold Voltage
Static Drain-Source On-State
V
R
2.0
I =250A, V =V
DS GS
D
GS(th)
DS(on)
0.7
0.9
V
V
=10V, I =1.5A
⍀
⍀
GS
GS
D
(1)
Resistance
=6V, I =1A
D
(1) (3)
Forward Transconductance
g
1.6
S
V
=15V,I =1A
D
fs
DS
(3)
DYNAMIC
Input Capacitance
C
C
C
138
12
6
pF
pF
pF
iss
V
=50 V, V =0V,
DS
GS
Output Capacitance
oss
rss
f=1MHz
Reverse Transfer Capacitance
(2) (3)
S WITCHING
Turn-On Delay Time
Rise Time
t
t
t
t
1.8
1.5
4.1
2.1
2.9
0.7
1
ns
ns
ns
ns
nC
nC
nC
d(on)
r
V
=50V, I =1A
D
DD
G
Turn-Off Delay Time
Fall Time
R =6.0⍀, V =10V
d(off)
f
GS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
S OURCE-DRAIN DIODE
Q
Q
Q
g
V
=50V,V =10V,
GS
DS
gs
gd
ID=1A
(1)
Diode Forward Voltage
V
0.85
0.95
V
T =25°C, I =1.5A,
j S
GS
SD
V
=0V
(3)
Reverse Recovery Time
t
27
12
ns
T =25°C, I =1.8A,
j S
di/dt=100A/µs
rr
(3)
Reverse Recovery Charge
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300µs; duty cycle Յ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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ZXMN10A07F
TYPICAL CHARACTERISTICS
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S E M IC O N D U C T O R S
ZXMN10A07F
TYPICAL CHARACTERISTICS
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S E M IC O N D U C T O R S
ZXMN10A07F
PACKAGE OUTLINE
PAD LAYOUT
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.
PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MIN
MILLIMETRES
INCHES
DIM
DIM
MIN
2.67
1.20
ᎏ
MAX
3.05
1.40
1.10
0.53
0.15
MAX
0.120
0.055
0.043
0.021
MIN
0.33
0.01
2.10
0.45
MAX
0.51
0.10
2.50
0.64
MIN
MAX
0.020
0.004
0.0985
0.025
A
B
C
D
F
0.105
0.047
ᎏ
H
K
L
0.013
0.0004
0.083
0.018
0.37
0.085
0.015
M
N
0.0034 0.0059
0.075 NOM
0.95 NOM
10Њ TYP
0.0375 NOM
G
1.90 NOM
10Њ TYP
© Zetex plc 2003
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These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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ISSUE 5 - J ULY 2003
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S E M IC O N D U C T O R S
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