ZXMN10A07ZTA [DIODES]
100V N-CHANNEL ENHANCEMENT MODE MOSFET; 100V N沟道增强型MOSFET
| 型号： | ZXMN10A07ZTA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN10A07Z
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
=100V : R
=0.7 ; I =1.4A
DS(on) D
(BR)DSS
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage power management applications.
FEATURES
SOT89
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT89 package
APPLICATIONS
• DC-DC converters
• Power m anagem ent functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
PINOUT
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN10A07ZTA
7"
12m m
1000 units
DEVICE MARKING
• 7N10
(Top view )
ISSUE 6 - MAY 2004
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S E M IC O N D U C T O R S
ZXMN10A07Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
100
UNIT
V
Dra in -s o u rce vo lta g e
V
V
I
DS S
GS
Ga te -s o u rce vo lta g e
±20
V
(b )
Continuous drain current
1.4
A
@ V =10V; T =25°C
D
GS
A
(b )
(a )
@ V =10V; T =70°C
1.1
1.0
GS
A
@ V =10V; T =25°C
GS
A
(c)
Pu ls e d d ra in cu rre n t
I
I
I
4.2
A
A
DM
(b )
Co n tin u o u s s o u rce cu rre n t (b o d y d io d e )
2.1
S
(c)
Pu ls e d s o u rce cu rre n t (b o d y d io d e )
4.2
A
S M
(a )
Po w e r d is s ip a tio n a t T =25°C
A
P
1.5
W
D
Lin e a r d e ra tin g fa cto r
12
2.6
m W/°C
W
(b )
Po w e r d is s ip a tio n a t T =25°C
A
P
D
Lin e a r d e ra tin g fa cto r
21
m W/°C
°C
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e
T , T
-55 to +150
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
83.3
UNIT
°C/W
°C/W
(a )
J u n ctio n to a m b ie n t
R
R
⍜J A
⍜J A
(b )
J u n ctio n to a m b ie n t
47.4
NOTES
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface m ounted on FR4 PCB m easured at t Յ 10 sec.
(c) Repetitive rating 25m m x 25m m FR4 PCB, D = 0.02, pulse width 300s - pulse width lim ited by m axim um junction tem perature.
Refer to Transient Therm al Im pedance graph.
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ZXMN10A07Z
CHARACTERISTICS
ISSUE 6 - MAY 2004
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ZXMN10A07Z
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
am b
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -s o u rce b re a kd o w n vo lta g e
Ze ro g a te vo lta g e d ra in cu rre n t
Ga te -b o d y le a ka g e
V
100
V
A
nA
V
ID= 250A, VGS =0V
VDS = 100V, VGS =0V
VGS =Ϯ20V, VDS =0V
ID= 250A, VDS =VGS
(BR)DS S
I
1
DS S
I
100
GS S
Ga te -s o u rce th re s h o ld vo lta g e
V
2.0
GS (th )
S ta tic d ra in -s o u rce o n -s ta te
re s is ta n ce
R
0.7
0.9
⍀
V
V
V
= 10V, I = 1.5A
D
DS (o n )
GS
GS
DS
(1)
= 6V, I = 1A
D
⍀
(1) (3)
Fo rw a rd tra n s co n d u cta n ce
g
1.6
S
= 15V, I = 1A
D
fs
(3)
DYNAMIC
In p u t ca p a cita n ce
C
C
C
138
12
6
pF
pF
pF
is s
V
= 50V, V =0V
GS
DS
Ou tp u t ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e tra n s fe r ca p a cita n ce
(2) (3)
S WITCHING
Tu rn -o n -d e la y tim e
Ris e tim e
t
t
t
t
1.8
1.5
4.1
2.1
2.9
0.7
1
ns
ns
d (o n )
V
R
= 50V, I = 1A
D
DD
r
≅6.0⍀, V = 10V
Tu rn -o ff d e la y tim e
Fa ll tim e
ns
G
GS
d (o ff)
f
ns
To ta l g a te ch a rg e
Ga te -s o u rce ch a rg e
Ga te d ra in ch a rg e
S OURCE-DRAIN DIODE
Q
Q
Q
nC
nC
nC
g
V
= 50V, V = 10V
GS
g s
g d
DS
I = 1A
D
(1)
Dio d e fo rw a rd vo lta g e
V
t
0.85
0.95
V
T =25°C, I = 1.5A,
j S
S D
V
=0V
GS
(3)
Re ve rs e re co ve ry tim e
27
12
ns
T =25°C, I = 1A,
rr
j
F
(3)
d i/d t=100A/s
Re ve rs e re co ve ry ch a rg e
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
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ZXMN10A07Z
TYPICAL CHARACTERISTICS
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ZXMN10A07Z
TYPICAL CHARACTERISTICS
ISSUE 6 - MAY 2004
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ZXMN10A07Z
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
A
H
C
K
D B
G
F
N
Millim eters
DIM
Inches
Min
4.40
3.75
1.40
-
Max
4.60
4.25
1.60
2.60
0.45
0.55
1.80
2.85
3.10
1.60
Min
Max
0.181
0.167
0.630
0.102
0.018
0.022
0.072
0.112
0.112
0.063
A
B
C
D
F
0.173
.150
0.550
-
0.28
0.38
1.50
2.60
2.90
1.4
0.011
0.015
0.060
0.102
0.114
0.055
G
H
K
L
N
© Zetex Sem iconductors plc 2004
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ISSUE 6 - MAY 2004
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S E M IC O N D U C T O R S
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