ZXMN3A01E6 [DIODES]
30V N-CHANNEL ENHANCEMENT MODE MOSFET; 30V N沟道增强型MOSFET
| 型号： | ZXMN3A01E6 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN3A01E6
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
V
= 30V; R
= 0.12 I = 3.0A
DS(ON) D
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT23-6
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A01E6TA
ZXMN3A01E6TC
7”
8mm
8mm
3000 units
13”
10000 units
DEVICE MARKING
Top View
•
3A1
ISSUE 2 - JULY 2002
1
ZXMN3A01E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
30
UNIT
Drain-Source Voltage
Gate Source Voltage
V
V
V
V
A
DSS
GS
20
Continuous Drain Current V
=10V; T =25°C (b)
I
3.0
2.4
2.4
GS
A
D
V
=10V; T =70°C (b)
GS
A
V
=10V; T =25°C (a)
GS
A
Pulsed Drain Current (c)
I
I
I
10
2.4
10
A
A
A
DM
S
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
SM
Power Dissipation at T =25°C (a)
A
P
1.1
8.8
W
mW/°C
D
Linear Derating Factor
Power Dissipation at T =25°C (b)
A
P
1.7
13.6
W
mW/°C
D
Linear Derating Factor
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
113
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
NOTES
R
R
θJA
θJA
70
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 2 - JULY 2002
2
ZXMN3A01E6
CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
10
1
RDS(on)
Limited
DC
1s
100ms
10ms
100m
10m
1ms
Single Pulse
Tamb=25°C
100µs
0.0
0
100m
10
Collecto1 r-Emitter Voltage (V)
20 40 60 80
140 160
Temperature1(0°C0 ) 120
V
DS
Safe Operating Area
Derating Curve
120
100
80
Tamb=25°C
100
10
1
Single Pulse
amb=25°C
T
D=0.5
D=0.2
60
40
Single Pulse
D=0.05
D=0.1
20
0.1
100µ 1m 10m 100m
1
100 1k
Pulse Width (s)10
100µ 1m 10m 100m
1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 2 - JULY 2002
3
ZXMN3A01E6
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
30
1
V
I
=250µA, V
=0V
(BR)DSS
D
GS
=30V, V =0V
GS
I
0.5
V
µA
nA
V
DSS
DS
I
100
V
=Ϯ20V, V
=0V
GSS
GS
DS
Gate-Source Threshold Voltage
V
R
I
=250µA, V
= V
GS(th)
DS(on)
DS
=10V, I =2.5A
GS
D
Static Drain-Source On-State Resistance
(1)
0.106 0.12
0.18
V
V
Ω
Ω
GS
GS
D
=4.5V, I =2.0A
D
Forward Transconductance (1)(3)
DYNAMIC (3)
g
3.5
S
V
=4.5V,I =2.5A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
190
38
pF
pF
pF
iss
V
=25 V, V
=0V,
DS
GS
f=1MHz
oss
rss
20
t
t
t
t
1.7
2.3
6.6.
2.9
2.3
ns
ns
ns
ns
nC
d(on)
V
R
=15V, I =2.5A
D
r
DD
=6.0Ω, V
=10V
G
GS
Turn-Off Delay Time
Fall Time
d(off)
f
Gate Charge
Q
V
=15V,V
=5V,
g
DS
GS
GS
ID=2.5A
Total Gate Charge
Q
Q
Q
3.9
0.6
0.9
nC
nC
nC
g
V
=15V,V
=10V,
DS
ID=2.5A
Gate-Source Charge
Gate-Drain Charge
gs
gd
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
0.84
0.95
V
T =25°C, I =1.7A,
GS
SD
J
S
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t
17.7
13.0
ns
T =25°C, I =2.5A,
J F
rr
di/dt= 100A/µs
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JULY 2002
4
ZXMN3A01E6
TYPICAL CHARACTERISTICS
T = 150°C
10V 7V
5V
10V
5V
7V
T = 25°C
10
1
10
1
4.5V
4V
4.5V
4V
3.5V
3V
3.5V
3V
2.5V
VGS
VGS
0.1
0.1
2.5V
2V
0.1
1
0.1
V
1
VDS Drain-Source Voltage1(0V)
Drain-Source Voltage1(0V)
Output Characteristics
DSOutput Characteristics
10
1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 10V
VDS = 10V
IDG=S 2.5A
RDS(on)
T = 150°C
VGS(th)
T = 25°C
3.0
V
=VDS
IDG=S 250uA
0.1
2.0
2.5
3.5
4.0
5.0
-50
0
50
100
150
VGS Gate-Source Voltage 4(V.5)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
3.5V
4V
VGS
3V
2.5V
10
T = 150°C
1
4.5V
5V
7V
10V
10
1
T = 25°C
0.1
0.1
0.4
T = 25°C
0.1
0.6
0.8
1.0
1.2
1
ID Drain Current (A)
V
Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
ISSUE 2 - JULY 2002
5
ZXMN3A01E6
TYPICAL CHARACTERISTICS
300
250
200
150
100
50
10
VGS =0V
f =1MHz
ID =2.5A
8
6
4
2
0
C
ISS
COSS
VDS =15V
C
RSS
0
0
1
2
3
4
0.1
1
10
VDS - Drain- SourceVoltage(V)
Capacitance v Drain-Source Voltage
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
ISSUE 2 - JULY 2002
6
ZXMN3A01E6
PACKAGE OUTLINE
PAD LAYOUT DETAILS
b
e
2
L
E1
E
DATUM A
a
e1
D
A
A2
A1
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.
PACKAGE DIMENSIONS
Millimetres
Inches
Min
Millimetres
Inches
Min
DIM
DIM
Min
0.90
0.00
0.90
0.35
0.09
2.80
Max
Max
0.057
0.006
0.051
0.019
0.008
0.118
Min
2.60
1.50
0.10
Max
Max
0.118
0.069
0.002
A
A1
A2
b
1.45
0.15
1.30
0.50
0.20
3.00
0.35
0
E
E1
L
3.00
1.75
0.60
0.102
0.059
0.004
0.035
0.014
0.0035
0.110
e
0.95 REF
1.90 REF
0° 10°
0.037 REF
0.074 REF
0° 10°
C
e1
L
D
© Zetex plc 2002
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 2 - JULY 2002
7
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