ZXMN3B04N8TC [DIODES]
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE; 30V N沟道增强型MOSFET 2.5V栅极驱动
| 型号： | ZXMN3B04N8TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| 文件： | 总7页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN3B04N8
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
V
=30V : R
(
)=0.025 ; I = 8.9A
(BR)DSS
DS on D
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that com bines the benefits of low on-resistance with fast switching
speed. This m akes them ideal for high efficiency, low voltage, power
m anagem ent applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC converters
• Power m anagem ent functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3B04N8TA
7”
12m m
12m m
500 units
ZXMN3B04N8TC
13”
2500 units
Top View
DEVICE MARKING
• ZXMN
3B04
ISSUE 2 - MAY 2004
1
S E M IC O N D U C T O R S
ZXMN3B04N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
UNIT
Dra in -s o u rce vo lta g e
V
V
30
V
DS S
GS
Ga te s o u rce vo lta g e
V
Ϯ12
(b )
(b )
(a )
Co n tin u o u s d ra in cu rre n t @ V =4.5V; T =25°C
I
8.9
A
GS
A
D
@ V =4.5V; T =70°C
7.3
A
GS
A
@ V =4.5V; T =25°C
GS
A
7.2
A
(c)
Pu ls e d d ra in cu rre n t
I
I
I
45
A
A
DM
(b )
Co n tin u o u s s o u rce cu rre n t (b o d y d io d e )
4.5
S
(c)
Pu ls e d s o u rce cu rre n t (b o d y d io d e )
45
A
S M
(a )
Po w e r d is s ip a tio n a t T =25°C
A
P
2
W
D
Lin e a r d e ra tin g fa cto r
16
m W/°C
W
(b )
Po w e r d is s ip a tio n a t T =25°C
A
P
3
24
D
Lin e a r d e ra tin g fa cto r
m W/°C
°C
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e
T :T
-55 to +150
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
62.5
UNIT
°C/W
°C/W
(a )
J u n ctio n to a m b ie n t
R
R
⍜J A
⍜J A
(b )
J u n ctio n to a m b ie n t
41.4
NOTES
(a) For a device surface m ounted on 50m m x 50m m FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface m ounted on FR4 PCB m easured at t Յ 10 sec.
(c) Repetitive rating - 25m m x 25m m FR4 PCB, D=0.02, pulse width 300s - pulse width lim ited by m axim um junction tem perature.
ISSUE 2 - MAY 2004
2
S E M IC O N D U C T O R S
ZXMN3B04N8
CHARACTERISTICS
ISSUE 2 - MAY 2004
3
S E M IC O N D U C T O R S
ZXMN3B04N8
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -s o u rce b re a kd o w n vo lta g e
Ze ro g a te vo lta g e d ra in cu rre n t
Ga te -b o d y le a ka g e
V
30
V
A
nA
V
I =250A, V =0V
D GS
(BR)DS S
I
I
0.5
V
=30V, V =0V
DS S
DS GS
100
V
=Ϯ12V, V =0V
GS S
GS DS
Ga te -s o u rce th re s h o ld vo lta g e
S ta tic d ra in -s o u rce o n -s ta te
V
R
0.7
I =250A, V = V
DS GS
D
GS (th )
DS (o n )
0.021 0.025
0.028 0.040
24
V
V
=4.5V, I =7.2A
⍀
GS
GS
D
(1)
re s is ta n ce
=2.5V, I =5.7A
D
⍀
(1) (3)
Fo rw a rd tra n s co n d u cta n ce
g
S
V
=15V,I =7.2A
D
fs
DS
(3)
DYNAMIC
In p u t ca p a cita n ce
C
C
C
2480
318
pF
pF
pF
is s
V
=15V, V =0V,
DS
GS
Ou tp u t ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e tra n s fe r ca p a cita n ce
184
(2) (3)
S WITCHING
Tu rn -o n d e la y tim e
Ris e tim e
t
t
t
t
9
ns
ns
d (o n )
V
=15V, V =4.5V
GS
DD
11.5
40
r
I =1A
D
Tu rn -o ff d e la y tim e
Fa ll tim e
ns
d (o ff)
f
R
≅6.0⍀,
G
16.6
23.1
4.9
ns
To ta l g a te ch a rg e
Ga te -s o u rce ch a rg e
Ga te -d ra in ch a rg e
S OURCE-DRAIN DIODE
Q
Q
Q
nC
nC
nC
g
V
=15V,V =4.5V,
DS
GS
g s
g d
ID=7.2A
6.2
(1)
Dio d e fo rw a rd vo lta g e
V
0.85
0.95
V
T =25°C, I =8A,
J S
S D
V
=0V
GS
(3)
Re ve rs e re co ve ry tim e
t
17.9
10
ns
T =25°C, I =3.2A,
J F
rr
(3)
d i/d t= 100A/s
Re ve rs e re co ve ry ch a rg e
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ2%.
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - MAY 2004
4
S E M IC O N D U C T O R S
ZXMN3B04N8
TYPICAL CHARACTERISTICS
ISSUE 2 - MAY 2004
5
S E M IC O N D U C T O R S
ZXMN3B04N8
TYPICAL CHARACTERISTICS
ISSUE 2 - MAY 2004
6
S E M IC O N D U C T O R S
ZXMN3B04N8
PACKAGE OUTLINE
⍜
D
P IN 1
C
S EATING P LANE
B
E
Controlling dim ensions are in inches. Approxim ate conversions are given in m illim eters
PACKAGE DIMENSIONS
Inches
Millim eters
Inches
Min Max
0.050 BSC
Millim eters
Min Max
1.27 BSC
DIM
DIM
Min
Max
0.069
0.010
0.197
0.244
0.157
0.050
Min
1.35
0.10
4.80
5.80
3.80
0.40
Max
A
A1
D
0.053
0.004
0.189
0.228
0.150
0.016
1.75
0.25
5.00
6.20
4.00
1.27
e
b
0.013
0.020
0.010
8Њ
0.33
0.19
0Њ
0.51
0.25
8Њ
c
0.008
0Њ
H
⍜
h
E
0.010
0.020
0.25
0.50
L
© Zetex Sem iconductors plc 2004
Europe
Am ericas
Asia Pacific
Corporate Headquarters
Zetex Gm bH
Zetex Inc
Zetex (Asia) Ltd
Zetex plc
Streitfeldstraß e 19
D-81673 München
Germ any
700 Veterans Mem orial Hwy
Hauppauge, NY 11788
USA
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Lansdowne Road, Chadderton
Oldham , OL9 9TY
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in m ajor countries world-wide.
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product inform ation, log on to www.zetex.com
ISSUE 2 - MAY 2004
7
S E M IC O N D U C T O R S
相关型号：
©2020 ICPDF网 联系我们和版权申明