ZXTN2007G [DIODES]
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223; 30V NPN型中功率低饱和晶体管采用SOT223
| 型号： | ZXTN2007G |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 |
| 文件： | 总6页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTN2007G
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BVCEO = 30V : RSAT = 28m ; IC = 7A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 30V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
SOT223
• Extemely low equivalent on-resistance; RSAT = 28m at 6.5A
• 7 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 20 amps
APPLICATIONS
• DC - DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXTN2007GTA
ZXTN2007GTC
7”
1,000 units
4,000 units
12mm
embossed
13"
TOP VIEW
DEVICE MARKING
ZXTN
2007
ISSUE 2 - MAY 2006
1
SEMICONDUCTORS
ZXTN2007G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
BV
BV
BV
80
V
CBO
CEO
EBO
30
V
7
V
A
(a)
Continuous collector current
I
I
7
20
C
Peak pulse current
(a)
A
CM
Power dissipation at T =25°C
A
P
3.0
W
D
Linear derating factor
24
mW/°C
W
(b)
Power dissipation at T =25°C
A
P
1.6
D
Linear derating factor
12.8
mW/°C
°C
Operating and storage temperature range
T , T
-55 to +150
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
42
UNIT
°C/W
°C/W
(a)
Junction to ambient
R
R
⍜JA
⍜JA
(b)
Junction to ambient
78
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 2 - MAY 2006
2
SEMICONDUCTORS
ZXTN2007G
CHARACTERISTICS
ISSUE 2 - MAY 2006
3
SEMICONDUCTORS
ZXTN2007G
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
SYMBOL
PARAMETER
MIN.
80
80
30
7
TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
BV
BV
BV
BV
125
125
40
V
V
I =100A
C
CBO
CER
CEO
EBO
I =1A, RBՅ1k⍀
C
V
I =10mA*
C
8.1
V
I =100A
E
I
50
0.5
100
0.5
10
nA
A
nA
A
nA
V
V
V
V
=70V
CB
CBO
=70V, T
=100ЊC
=100ЊC
CB
amb
Collector cut-off current
I
=70V
CER
CB
RՅ1k⍀
=70V, T
CB
amb
Emitter cut-off current
I
V
=6V
EB
EBO
Collector-emitter saturation voltage
V
25
35
35
mV I =0.5A, I =20mA*
C B
CE(SAT)
50
mV I =1A, I =100mA*
C B
50
65
mV I =1A, I =20mA*
C B
100
185
125
220
mV I =2A, I =20mA*
C B
mV I =6.5A, I =300mA*
C
B
Base-emitter saturation voltage
Base-emitter turn-on voltage
V
V
h
1025 1130
mV I =6.5A, I =300mA*
C B
BE(SAT)
BE(ON)
FE
920
175
200
150
30
1000
mV I =6.5A, V =1V*
C CE
Static forward current transfer ratio
100
100
100
20
I =10mA, V =1V*
C CE
300
I =1A, V =1V*
C
CE
I =7A, V =1V*
C
CE
I =20A, V =1V*
C
CE
Transition frequency
f
140
MHz I =100mA, V =10V
T
C
CE
f=50MHz
Output capacitance
Switching times
C
48
37
pF
V
=10V, f=1MHz*
CB
OBO
t
t
ns I =1A, V =10V,
ON
C
CC
425
I
=-I =100mA
B2
OFF
B1
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
ISSUE 2 - MAY 2006
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SEMICONDUCTORS
ZXTN2007G
TYPICAL CHARACTERISTICS
ISSUE 2 - MAY 2006
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SEMICONDUCTORS
ZXTN2007G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
Millimeters
Min Max
2.30 BSC
4.60 BSC
Inches
Min Max
DIM
DIM
Min
-
Max
Min
Max
0.071
0.004
0.033
0.122
0.013
0.264
A
A1
b
1.80
0.10
0.84
3.10
0.33
6.70
-
e
e1
E
0.0905 BSC
0.181 BSC
0.02
0.66
2.90
0.23
6.30
0.0008
0.026
0.114
0.009
0.248
6.70
7.30
0.264
0.287
b2
C
E1
L
3.30
0.90
-
3.70
0.130
0.355
-
0.146
-
-
-
-
D
-
© Zetex Semiconductors plc 2005
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ISSUE 2 - MAY 2006
6
SEMICONDUCTORS
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