ZXTP25020DFH [DIODES]
20V, SOT23, PNP medium power transistor; 20V ， SOT23 ， PNP中等功率晶体管
| 型号： | ZXTP25020DFH |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 20V, SOT23, PNP medium power transistor |
| 文件： | 总6页 (文件大小：512K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTP25020DFH
20V, SOT23, PNP medium power transistor
Summary
BV
BV
> -20V
CEO
ECO
> -4V
I
= 4A
C(cont)
V
< 60 mV @ 1A
= 39 m⍀
CE(sat)
CE(sat)
R
P = 1.25W
D
Complementary part number ZXTN25020DFH
Description
C
E
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
•
•
•
High power dissipation SOT23 package
High peak current
High gain
Low saturation voltage
E
B
Applications
C
•
•
•
MOSFET gate drivers
Power switches
Motor control
Pinout - top view
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTP25020DFHTA
7
8
3000
Device marking
1A3
Issue 1 - July 2006
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ZXTP25020DFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
V
V
V
-25
V
CBO
CEO
ECO
EBO
Collector-emitter voltage (forward blocking)
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
-20
-4
V
V
-7
V
(c)
I
-4
A
A
A
W
Continuous collector current
C
Base current
I
-1
B
Peak pulse current
I
-10
0.73
CM
(a)
P
P
P
P
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
=25°C
=25°C
=25°C
=25°C
D
D
D
D
amb
amb
amb
amb
5.84
1.05
mW/°C
W
(b)
(c)
(d)
8.4
mW/°C
W
1.25
9.6
mW/°C
W
1.81
14.5
mW/°C
°C
Operating and storage temperature range
T , T
-55 to 150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
171
°C/W
Junction to ambient
⍜JA
(b)
R
119
100
69
°C/W
°C/W
°C/W
Junction to ambient
⍜JA
(c)
R
Junction to ambient
⍜JA
(d)
R
Junction to ambient
⍜JA
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b)For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(d)As (c) above measured at t<5 seconds.
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
2
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ZXTP25020DFH
Characteristics
Issue 1 - July 2006
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3
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ZXTP25020DFH
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown
voltage
BV
-25
-20
-7
-55
V
V
V
V
I = -100A
C
CBO
CEO
EBO
ECO
(*)
Collector-emitterbreakdown BV
voltage (base open)
-45
-8.3
-8.5
<-1
I = -10mA
C
Emitter-base breakdown
voltage
BV
I = -100A
E
(*)
Emitter-collector breakdown BV
voltage (reverse blocking)
-4
I = -100A
C
Collector cut-off current
I
-50
-20
-50
-60
nA
A
nA
mV
V
V
V
= -20V
CBO
CB
CB
EB
= -20V, T
= 100°C
amb
Emitter cut-off current
I
<-1
-50
= -5.6V
EBO
(*)
Collector-emitter saturation
voltage
V
I = -1A, I = -100mA
CE(sat)
C
B
(*)
(*)
-150
-180
-155
-210
-240
-180
mV
mV
mV
mV
I = -1A, I = -10mA
C
B
I = -2A, I = -40mA
C
B
(*)
(*)
I = -4A, I = -400mA
C
B
Base-emitter saturation
voltage
V
V
h
-960 -1050
I = -4A, I = -400mA
BE(sat)
BE(on)
C
B
(*)
Base-emitter turn-on
voltage
-815
-900
900
mV
I = -4A, V = -2V
C
CE
(*)
Static forward current
transfer ratio
300
200
70
450
310
100
20
I = -10mA, V = -2V
FE
C
CE
(*)
I = -1A, V = -2V
C
CE
(*)
I = -4A, V = -2V
C
CE
(*)
I = -10A, V = -2V
C
CE
Transition frequency
Output capacitance
f
290
MHz I = -50mA, V = -10V
T
C
CE
f = 50MHz
(*)
C
21
30
pF
V
V
= -10V, f = 1MHz
OBO
CB
CC
Delay time
Rise time
t
t
t
t
14.2
16.3
186
= -10V. I = -1A, I
C B1
(d)
= I = -50mA.
B2
(r)
(s)
(f)
Storage time
Fall time
32.7
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTP25020DFH
Typical characteristics
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
5
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ZXTP25020DFH
Package outline - SOT23
L
H
G
N
D
3 leads
A
M
B
C
K
F
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Max.
Min.
2.67
1.20
-
Max.
3.05
1.40
1.10
0.53
0.15
Min.
0.105
0.047
-
Max.
0.120
0.055
0.043
0.021
0.0059
Min.
0.33
0.01
2.10
0.45
Max.
0.51
0.10
2.50
0.64
Max.
0.020
0.004
0.0985
0.025
A
B
C
D
F
H
K
L
0.013
0.0004
0.083
0.018
0.37
0.085
0.015
0.0034
M
N
-
0.95 NOM
0.0375 NOM
G
1.90 NOM
0.075 NOM
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
6
www.zetex.com
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