ES3G [DIOTECH]

SURFACE MOUNT SUPER FAST RECTIFIER; 表面装载超快速整流器
ES3G
型号: ES3G
厂家: DIOTECH COMPANY.    DIOTECH COMPANY.
描述:

SURFACE MOUNT SUPER FAST RECTIFIER
表面装载超快速整流器

二极管 光电二极管 IOT 超快速恢复二极管
文件: 总2页 (文件大小:845K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ES3A THRU ES3J  
SURFACE MOUNT SUPER FAST RECTIFIER  
Reverse Voltage - 50 to 600 Volts  
Forward Current - 3.0 Ampere  
FEATURES  
SMC ( DO-214AB )  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
For surface mounted applications  
Super fast switching for high efficiency  
Low reverse leakage  
Built-in strain relief,ideal for automated placement  
High forward surge current capability  
High temperature soldering guaranteed:  
250 C/10 seconds at terminals  
.128(3.25)  
.108(2.75)  
.245(6.22)  
.220(5.59)  
.280(7.11)  
.260(6.60)  
.012(.305)  
.006(.152)  
.103(2.62)  
.079(2.00)  
MECHANICAL DATA  
Case: JEDEC DO-214AB molded plastic body  
Terminals: Solder plated , solderable per MIL-STD-750,  
Method 2026  
.008(.203)  
.002(.051)  
.060(1.52)  
.030(0.76)  
.320(8.13)  
.305(7.75)  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight:0.007 ounce, 0.24grams  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
ES3A  
ES3B  
ES3C  
ES3E  
ES3G  
ES3J  
ES3D  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
V
50  
35  
100  
70  
150  
105  
200  
300  
210  
400  
280  
600  
420  
V
R
RMS Reverse Voltage  
VR(RMS)  
IO  
140  
3.0  
V
A
Average Rectified Output Current  
@TC = 100°C  
Non-Repetitive Peak Forward Surge  
Current 8.3ms Single half sine-wave  
superimposed on rated load (JEDEC Method)  
A
IFSM  
100  
Forward Voltage  
@IF = 3.0A  
VFM  
IRM  
0.95  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage @TA = 125°C  
@TA = 25°C  
10  
500  
µA  
35  
45  
Reverse Recovery Time (Note 1)  
trr  
Cj  
nS  
pF  
°C  
Typical Junction Capacitance (Note 2)  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
ES3A THRU ES3J  
RATINGS AND CHARACTERISTIC CURVES  
10  
1.0  
0.1  
3.0  
2.0  
1.0  
0
Tj = 25°C  
Pulse Width: 300µs  
0.01  
25  
50  
75  
100  
125  
150  
175  
0
0.4  
0.8  
1.2  
1.6  
TT, TERMINAL TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
1000  
100  
10  
120  
100  
80  
Single Half-Sine-Wave  
(JEDEC Method)  
Tj = 125°C  
60  
40  
Tj = 25°C  
20  
0
1.0  
0
40  
80  
120  
1
10  
100  
NUMBER OF CYCLES AT 60Hz  
Fig. 3 Surge Current Derating Curve  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Fig. 4 Typical Reverse Characteristics  
trr  
+0.5A  
50NI (Non-inductive)  
10NI  
Device  
Under  
Test  
(-)  
0A  
(+)  
Pulse  
Generator  
(Note 2)  
50V DC  
Approx  
-0.25A  
(-)  
1.0Ω  
NI  
(+)  
Oscilloscope  
(Note 1)  
Notes:  
-1.0A  
1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF.  
2. Rise Time = 10ns max. Input Impedance = 50.  
Set time base for 50/100 ns/cm  
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit  

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