KBU808 [DIOTECH]

SINGLE PHASE SILICON BRIDGE RECTIFIER; 单相硅桥式整流器器
KBU808
型号: KBU808
厂家: DIOTECH COMPANY.    DIOTECH COMPANY.
描述:

SINGLE PHASE SILICON BRIDGE RECTIFIER
单相硅桥式整流器器

二极管
文件: 总2页 (文件大小:727K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KBU8005 THRU KBU810  
SINGLE PHASE SILICON BRIDGE RECTIFIER  
Reverse Voltage - 50 to 1000 Volts  
Forward Current - 8.0 Ampere  
FEATURES  
KBU  
.15 X23L  
Ideal for printed circuit board  
Surge overload rating: 300A peak  
High case dielectric strength  
High temperature soldering guaranteed:  
260°C/10 seconds at 5lbs. (2.3kg) tension  
.157(4.0)*45°  
(3.8 X5.7L)  
HOLE THRU  
.935(23.7)  
.895(22.7)  
300  
(7.5)  
.700(17.8)  
.600(16.8)  
.780(19.8)  
.740(18.8)  
1.00  
(25.4)  
MECHANICAL DATA  
MIN.  
Case: UL-94 Class V-0 recognized Flame Retardant Epoxy  
.052(1.3)DIA.  
.048(1.2)TYP.  
Terminals  
:
Plated leads solderable per  
MIL-STD 202, method 208  
.087(2.2)  
.071(1.8)  
.220(5.6)  
.180(4.6)  
Mounting Position: Any  
Marking: Type Number  
.276(7.0)  
.256(6.5)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
KBU  
8005  
KBU  
801  
KBU  
802  
KBU  
804  
KBU  
806  
KBU  
808  
KBU  
810  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
V
RWM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
V
R
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
8.0  
V
A
Average Rectified Output Current  
@TC = 100°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
FSM  
300  
1.0  
A
V
I
Forward Voltage (per element)  
@IF = 4.0A  
VFM  
IR  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
10  
1.0  
µA  
mA  
Rating for Fusing (t < 8.3ms) (Note 1)  
Typical Thermal Resistance (Note 2)  
I2t  
373  
7.5  
2s  
A
R
JC  
K/W  
°C  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Non-repetitive for t > 1ms and < 8.3ms.  
2. Thermal resistance junction to case per element mounted on PC board with 13.0x13.0x0.03mm thick land areas.  
KBU8005 THRU KBU810  
RATINGS AND CHARACTERISTIC CURVES  
FIG.1- MAXIMUM NON-REPETITIVE FORWARD  
FIG.2- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
SURGE CURRENT PER BRIDGE ELEMENT  
300  
250  
200  
8
6
TJ=250C  
8.3ms Single Half Sine Wave  
JEDEC Method  
150  
100  
50  
4
2
MOUNTED ON 4X4 INCH  
COPPER PC BOARD  
0.5" (12.7mm) LEAD LENGTH  
0
0
1
2
5
10  
50  
20  
100  
150  
0
50  
100  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE. (oC)  
FIG.3- TYPICAL INSTANTANEOUS FORWARD  
FIG.4- TYPICAL REVERSE CHARACTERISTICS  
CHARACTERISTICS PER BRIDGE ELEMENT  
PER BRIDGE ELEMENT  
100  
100  
40  
Tj=1000C  
20  
10  
10  
4
2
1
1
0.4  
0.2  
0.1  
Tj=250C  
PULSE WIDTH-300 S  
1% DUTY CYCLE  
Tj=250C  
0.1  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
20  
40  
60  
80  
100  
120  
140  
INSTANTANEOUS FORWARD VOLTAGE. (V)  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  

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