BC549XBK [DIOTEC]
General Purpose Si-Epitaxial Planar Transistors; 通用硅外延平面晶体管
| 型号： | BC549XBK |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | General Purpose Si-Epitaxial Planar Transistors |
| 文件： | 总2页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC546xBK ... BC549xBK
BC546xBK ... BC549xBK
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
NPN
NPN
Version 2009-12-03
4.6±0.1
Power dissipation – Verlustleistung
500 mW
Plastic case
TO-92
Kunststoffgehäuse
(10D3)
Weight approx. – Gewicht ca.
0.18 g
C B E
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Special packaging bulk
Sonder-Lieferform Schüttgut
2 x 1.27
Dimensions - Maße [mm]
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC546
85 V
BC547
50 V
BC548/549
30 V
Collector-Emitter-voltage
E-B short
B open
E open
C open
VCES
VCEO
VCBO
VEB0
Ptot
Collector-Emitter-voltage
65 V
45 V
30 V
Collector-Base-voltage
80 V
50 V
30 V
Emitter-Base-voltage
5 V
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
500 mW 1)
100 mA
200 mA
200 mA
200 mA
IC
ICM
IBM
- IEM
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 10 µA
hFE
hFE
hFE
typ. 90
110 ... 220
typ. 120
typ. 150
200 ... 450
typ. 200
typ. 270
420 ... 800
typ. 400
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 100 mA
h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
hie
1.6 ... 4.5 kΩ 3.2 ...8.5 kΩ
6 ... 15 kΩ
hoe
18 < 30 µS
30 < 60 µS
typ. 2*10-4
60 < 110 µS
Reverser voltage transfer ratio
Spannungsrückwirkung
hre
typ. 1.5*10-4
typ. 3*10-4
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC546xBK ... BC549xBK
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
VCE = 80 V, (B-E short)
VCE = 50 V, (B-E short)
VCE = 30 V, (B-E short)
BC546
BC547
BC548 / BC549
ICES
ICES
ICES
–
–
–
0.2 nA
0.2 nA
0.2 nA
15 nA
15 nA
15 nA
VCE = 80 V, Tj = 125°C, (B-E short)
VCE = 50 V, Tj = 125°C, (B-E short)
VCE = 30 V, Tj = 125°C, (B-E short)
BC546
BC547
BC548 / BC549
ICES
ICES
ICES
–
–
–
–
–
–
4 µA
4 µA
4 µA
Collector-Emitter saturation voltage – Kollektor-EmitterSättigungsspg. 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
VCEsat
–
–
80 mV
200 mV
200 mV
600 mV
Base saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
VBEsat
–
–
700 mV
900 mV
–
–
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
VBE
VBE
580 mV
–
660 mV
–
700 mV
720 mV
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
–
–
–
300 MHz
3.5 pF
9 pF
–
6 pF
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC546 / BC547
BC548 / BC549
F
F
–
–
2 dB
1.2 dB
10 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC556 ... BC559
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC546A
BC547A
BC548A
BC546B
BC547B
BC548B
BC549B
BC547C
BC548C
BC549C
2
1
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG
相关型号：
©2020 ICPDF网 联系我们和版权申明