BCV27 [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors
| 型号： | BCV27 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCV27, BCV47
NPN
Darlington Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-01-20
Power dissipation – Verlustleistung
250 mW
2.9±0.1
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
1.1
0.4
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
2
1
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B1 2 = E2 3 = C
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BCV27
BCV47
60 V
Collector-Emitter-voltage
VBE = 0
E open
C open
VCES
VCB0
VEB0
Ptot
30 V
40 V
Collector-Base-voltage
80 V
Emitter-Base-voltage
10 V
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
250 mW 1)
500 mA
800 mA
100 mA
150/C
IC
Peak Collector current – Kollektor-Spitzenstrom ICM
Base current – Basisstrom (dc)
IB
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 30 V
IE = 0, VCB = 60 V
BCV27
BCV47
ICB0
ICB0
–
–
–
–
100 nA
100 nA
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 10 V
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IEB0
–
–
–
–
100 nA
1 V
IC = 100 mA, IB = 0.1 mA VCEsat
1
2
)
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
8
Darlington Transistors
BCV27, BCV47
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 100 mA, IB = 0.1 mA
VBEsat
–
–
1.5 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
BCV27
BCV47
hFE
hFE
4000
2000
–
–
–
–
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 100 mA
BCV27
BCV47
hFE
hFE
10000
4000
–
–
–
–
BCV27
BCV47
hFE
hFE
20000
10000
–
–
–
–
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 5 V, IC = 10 mA
- VBEon
–
–
1.4 V
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
–
220 MHz
–
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BCV26, BCV46
Marking – Stempelung
BCV27 = FF
BCV47 = FG
Pinning – Anschlußbelegung
3
T1
T2
1
2
1
2
)
)
Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
9
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