BYW53P [DIOTEC]
Standard Controlled Avalanche Rectifiers; 标准控制雪崩整流器型号: | BYW53P |
厂家: | DIOTEC SEMICONDUCTOR |
描述: | Standard Controlled Avalanche Rectifiers |
文件: | 总2页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYW52P ... BYW56P
BYW52P ... BYW56P
Standard Controlled Avalanche Rectifiers
Standard-Gleichrichter mit kontrolliertem Durchbruchsverhalten
Version 2009-06-16
Nominal current
Nennstrom
2 A
Ø 3±0.05
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
200...1000 V
Plastic case
DO-15
Kunststoffgehäuse
DO-204AC
Weight approx.
Gewicht ca.
0.4 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Ø 0.8±0.05
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Min. breakdown voltage
Min. Abbruchspannung
VBR [V] 1)
BYW52P
BYW53P
BYW54P
BYW55P
BYW56P
200
400
> 250
> 450
> 650
> 900
> 1100
600
800
1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
f > 15 Hz
TA = 25°C
TA = 25°C
IFAV
IFRM
IFSM
i2t
2 A 2)
10 A 2)
50/55 A
12.5 A2s
20 mJ
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Non-repetitive peak reverse avalanche energy
Einmalige Impulsenergie in Sperr-Richtung
IRSM = 1 mA
TA = 25°C
ERSM
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+175°C
1
2
IRSM = 1 mA
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
BYW52P ... BYW56P
Characteristics
Kennwerte
< 1.1 V
Forward voltage – Durchlass-Spannung
Leakage current – Sperrstrom
Tj = 25°C IF = 2 A
Tj = 25°C VR = VRRM
VF
IR
< 3 µA
Thermal resistance junction to ambient air
RthA
< 45 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to leads
RthL
< 15 K/W
Wärmewiderstand Sperrschicht − Anschlussdraht
102
120
[%]
[A]
10
100
Tj = 125°C
80
Tj = 25°C
1
60
40
10-1
IF
20
IFAV
0
50a-(2a-1.1v)
10-2
0.4
1.0
1.4
VF 0.8
1.2
[V] 1.8
0
TA
100
150
50
[°C]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
Rated forward current versus ambient temperature
Zul. Richtstrom in Abh. von der Umgebungstemp.
102
[A]
10
îF
1
1
10
102
[n]
103
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG
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