BYW53P [DIOTEC]

Standard Controlled Avalanche Rectifiers; 标准控制雪崩整流器
BYW53P
型号: BYW53P
厂家: DIOTEC SEMICONDUCTOR    DIOTEC SEMICONDUCTOR
描述:

Standard Controlled Avalanche Rectifiers
标准控制雪崩整流器

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文件: 总2页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BYW52P ... BYW56P  
BYW52P ... BYW56P  
Standard Controlled Avalanche Rectifiers  
Standard-Gleichrichter mit kontrolliertem Durchbruchsverhalten  
Version 2009-06-16  
Nominal current  
Nennstrom  
2 A  
Ø 3±0.05  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
200...1000 V  
Plastic case  
DO-15  
Kunststoffgehäuse  
DO-204AC  
Weight approx.  
Gewicht ca.  
0.4 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Ø 0.8±0.05  
Standard packaging taped in ammo pack  
Standard Lieferform gegurtet in Ammo-Pack  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V]  
Min. breakdown voltage  
Min. Abbruchspannung  
VBR [V] 1)  
BYW52P  
BYW53P  
BYW54P  
BYW55P  
BYW56P  
200  
400  
> 250  
> 450  
> 650  
> 900  
> 1100  
600  
800  
1000  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TA = 50°C  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFAV  
IFRM  
IFSM  
i2t  
2 A 2)  
10 A 2)  
50/55 A  
12.5 A2s  
20 mJ  
Repetitive peak forward current  
Periodischer Spitzenstrom  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Non-repetitive peak reverse avalanche energy  
Einmalige Impulsenergie in Sperr-Richtung  
IRSM = 1 mA  
TA = 25°C  
ERSM  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+175°C  
1
2
IRSM = 1 mA  
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case  
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
BYW52P ... BYW56P  
Characteristics  
Kennwerte  
< 1.1 V  
Forward voltage – Durchlass-Spannung  
Leakage current – Sperrstrom  
Tj = 25°C IF = 2 A  
Tj = 25°C VR = VRRM  
VF  
IR  
< 3 µA  
Thermal resistance junction to ambient air  
RthA  
< 45 K/W 1)  
Wärmewiderstand Sperrschicht – umgebende Luft  
Thermal resistance junction to leads  
RthL  
< 15 K/W  
Wärmewiderstand Sperrschicht − Anschlussdraht  
102  
120  
[%]  
[A]  
10  
100  
Tj = 125°C  
80  
Tj = 25°C  
1
60  
40  
10-1  
IF  
20  
IFAV  
0
50a-(2a-1.1v)  
10-2  
0.4  
1.0  
1.4  
VF 0.8  
1.2  
[V] 1.8  
0
TA  
100  
150  
50  
[°C]  
Forward characteristics (typical values)  
Durchlasskennlinien (typische Werte)  
Rated forward current versus ambient temperature  
Zul. Richtstrom in Abh. von der Umgebungstemp.  
102  
[A]  
10  
îF  
1
1
10  
102  
[n]  
103  
Peak forward surge current versus number of cycles at 50 Hz  
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz  
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case  
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden  
2
http://www.diotec.com/  
© Diotec Semiconductor AG  
 

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