BYZ50K32 [DIOTEC]

Trans Voltage Suppressor Diode, 26V V(RWM), Unidirectional,;
BYZ50K32
型号: BYZ50K32
厂家: DIOTEC SEMICONDUCTOR    DIOTEC SEMICONDUCTOR
描述:

Trans Voltage Suppressor Diode, 26V V(RWM), Unidirectional,

二极管
文件: 总2页 (文件大小:45K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BYZ 35A22 ... BYZ 35A37  
BYZ 35K22 ... BYZ 35K37  
Silicon Protectifiers  
with TVS characteristics  
High-temperature diodes  
Silizium Schutzgleichrichter  
mit Begrenzereigenschaften  
Hochtemperaturdioden  
Nominal current – Nennstrom  
35 A  
Breakdown voltage  
Abbruch-Spannung  
20...40 V  
Metal press-fit case with plastic cover  
Metall-Einpreßgehäuse mit Plastik-Abdeckung  
Weight approx. – Gewicht ca.  
10 g  
Casting compound has UL classification 94V-0  
Vergußmasse UL94V-0 klassifiziert  
Dimensions / Maße in mm  
Standard packaging: bulk – Standard Lieferform: lose im Karton  
Maximum ratings  
Grenzwerte  
Type / Typ  
Breakdown voltage  
Reverse volt. Forward voltage  
Max. clamping voltage  
Wire to / Draht an  
Abbruch-Spannung Sperrspannung Durchlaßspanng. Max. Begrenzerspanng.  
IT = 100 mA  
VBRmin [V] VBRmax  
IR = 50 : A  
VR [V]  
tp = 0.3 s  
VF [V] IF [A]  
at / bei IPP, tp = 1m s  
Anode  
Cathode  
VC [V]  
IPP [A]  
BYZ 35A22  
BYZ 35A26  
BYZ 35A32  
BYZ 35A37  
BYZ 35K22  
BYZ 35K26  
BYZ 35K32  
BYZ 35K37  
20.0  
24.0  
29.0  
34.0  
25.0  
30.0  
36.0  
40.0  
16.0  
20.0  
26.0  
30.0  
< 1.2  
< 1.2  
< 1.3  
< 1.3  
100  
100  
80  
35  
80  
40  
80  
50  
60  
80  
56  
60  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 150/C  
TA = 25/C  
TA = 25/C  
IFAV  
35 A  
Peak forward surge current, 50 / 60 Hz half sine-wave  
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle  
IFSM  
270 / 300 A  
Rating for fusing – Grenzlastintegral, t <10 ms  
i2t  
Tj  
375 A2s  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
– 50…+215/C  
TS – 50…+215/C  
Maximum pressure – Maximaler Einpreßdruck  
7 kN  
Thermal resistance junction to case  
RthC  
< 0.8 K/W  
Wärmewiderstand Sperrschicht – Gehäuse  
170  
01.04.2000  
BYZ 50A22 ... BYZ 50A37  
BYZ 50K22 ... BYZ 50K37  
Silicon Protectifiers  
with TVS characteristics  
High-temperature diodes  
Silizium Schutzgleichrichter  
mit Begrenzereigenschaften  
Hochtemperaturdioden  
Power dissipation – Verlustleistung  
50 W  
Breakdown voltage  
Abbruch-Spannung  
20...40 V  
Metal press-fit case with plastic cover  
Metall-Einpreßgehäuse mit Plastik-Abdeckung  
Weight approx. – Gewicht ca.  
10 g  
Casting compound has UL classification 94V-0  
Vergußmasse UL94V-0 klassifiziert  
Dimensions / Maße in mm  
Standard packaging: bulk – Standard Lieferform: lose im Karton  
Maximum ratings  
Grenzwerte  
Type / Typ  
Breakdown voltage  
Reverse volt. Forward voltage  
Max. clamping voltage  
Wire to / Draht an  
Abbruch-Spannung Sperrspannung Durchlaßspanng. Max. Begrenzerspanng.  
IT = 100 mA  
VBRmin [V] VBRmax  
IR = 50 : A  
tp = 0.3 s  
VF [V] IF [A]  
at / bei IPP, tp = 1m s  
Anode  
Cathode  
VR [V]  
VC [V]  
IPP [A]  
100  
100  
80  
BYZ 50A22  
BYZ 50A26  
BYZ 50A32  
BYZ 50A37  
BYZ 50K22  
BYZ 50K26  
BYZ 50K32  
BYZ 50K37  
20.0  
24.0  
29.0  
34.0  
25.0  
30.0  
36.0  
40.0  
16.0  
20.0  
26.0  
30.0  
< 1.1  
< 1.1  
< 1.2  
< 1.2  
100  
100  
80  
35  
40  
50  
80  
56  
80  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 150/C  
TA = 25/C  
TA = 25/C  
IFAV  
50 A  
Peak forward surge current, 50 / 60 Hz half sine-wave  
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle  
IFSM  
360 / 400 A  
Rating for fusing – Grenzlastintegral, t <10 ms  
i2t  
Tj  
660 A2s  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
– 50…+215/C  
TS – 50…+215/C  
Maximum pressure – Maximaler Einpreßdruck  
7 kN  
Thermal resistance junction to case  
Wärmewiderstand Sperrschicht – Gehäuse  
RthC  
< 0.6 K/W  
171  
01.04.2000  

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