BZT52C62 [DIOTEC]
Surface mount Silicon Planar Zener Diodes; 表面贴装硅平面稳压二极管型号: | BZT52C62 |
厂家: | DIOTEC SEMICONDUCTOR |
描述: | Surface mount Silicon Planar Zener Diodes |
文件: | 总2页 (文件大小:94K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZT52C2V4 ... BZT52C75 (500 mW)
BZT52C2V4 ... BZT52C75 (500 mW)
Surface mount Silicon Planar Zener Diodes
Silizium-Planar-Zener-Dioden für die Oberflächenmontage
Version 2010-09-09
Maximum power dissipation
Maximale Verlustleistung
500 mW
3...75 V
SOD-123
0.01 g
2.7
Nominal Z-voltage
Nominale Z-Spannung
0.6
0.1
Plastic case
Kunststoffgehäuse
Type
Code
Weight approx.
Gewicht ca.
3.8
Standard packaging taped and reeled
Dimensions - Maße [mm]
Standard Lieferform gegurtet auf Rolle
Standard Zener voltage tolerance is graded to the international E 24 (~ ±5%) standard.
Other voltage tolerances and higher Zener voltages on request.
Die Toleranz der Zener-Spannung ist in der Standard-Ausführung gestuft nach der internationalen
Reihe E 24 (~ ±5%). Andere Toleranzen oder höhere Arbeitsspannungen auf Anfrage.
Maximum ratings and Characteristics
Grenz- und Kennwerte
BZT52-series
Power dissipation – Verlustleistung
TA = 25°C
Ptot
500 mW 1)
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Thermal resistance junction to ambient air
RthA
< 300 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
RthT
< 240 K/W
Wärmewiderstand Sperrschicht – Anschluss
Zener voltages see table on next page – Zener-Spannungen siehe Tabelle auf der nächsten Seite
Marking – Stempelung (alternative)
BZT52C2V4 = MH, WX, 4C
BZT52C2V7 = MJ, W1, 4D
BZT52C3V0 = MK, W2, 4E
BZT52C3V3 = MM, W3, 4F
BZT52C3V6 = MN, W4, 4H
BZT52C3V9 = MP, W5, 4J
BZT52C4V3 = MR, W6, 4K
BZT52C4V7 = MX, W7, 4M
BZT52C5V1 = MY, W8, 4N
BZT52C5V6 = MZ, W9, 4P
BZT52C6V2 = NA, WA, 4R
BZT52C6V8 = NB, WB, 4X
BZT52C7V5 = NC, WC, 4Y
BZT52C8V2 = ND, WD, 4Z
BZT52C9V1 = NE, WE, 5A
BZT52C10 = NE, WF, 5B
BZT52C11 = NH, WG, 5C
BZT52C12 = NJ, WH, 5D
BZT52C13 = NK, WI, 5E
BZT52C15 = NM, WJ, 5F
BZT52C16 = NN, WK, 5H
BZT52C18 = NP, WL, 5J
BZT52C20 = NR, WM, 5K
BZT52C22 = NX, WN, 5M
BZT52C24 = NY, WO, 5N
BZT52C27 = NZ, WP, 5P
BZT52C30 = PA, WQ, 5R
BZT52C33 = PB, WR, 5X
BZT52C36 = PC, WS, 5Y
BZT52C39 = PD, WT, 5Z
BZT52C43 = WU, 6A
BZT52C47 = WV, 6B
BZT52C51 = WW, 6C
BZT52C56 = 6D
BZT52C62 = 6E
BZT52C68 = 6F
BZT52C75 = 6H
1
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad an jedem Anschluss)
© Diotec Semiconductor AG
http://www.diotec.com/
1
BZT52C2V4 ... BZT52C75 (500 mW)
Maximum ratings
Grenzwerte
Type
Typ
Z-voltage range 1)
Dynamic resistance
Diff. Widerstand
Temp. Coeffic.
of Z-voltage
…der Z-Spannung
Reverse volt.
Sperrspanng.
IR = 100 nA
Z-current 2)
Z-Strom 2)
TA = 25°C
Z-Spanngs.-Bereich 1)
IZT = 5mA
VZ min [V]
2.2
VZ max [V]
2.6
IZK [mA]
αVZ [10-4 /°C]
-9...-6
VR [V]
IZmax [mA]
ZZK [Ω]
< 100
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
5
1 (<120 µA)
192
172
156
143
132
119
109
100
93
83
76
69
63
57
0
2.5
2.9
< 110
< 120
< 130
< 130
< 130
< 130
< 130
< 130
< 80
< 50
< 30
< 30
< 30
< 30
< 30
< 30
< 35
< 35
< 40
< 40
< 45
< 50
< 55
< 60
< 70
< 80
< 80
< 90
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
-9...-6
1 (<120 µA)
2.8
3.2
-8...-5
1 (<50 µA)
3.1
3.5
-8...-5
1 (<20 µA)
3.4
3.8
-8...-5
1 (<10 µA)
3.6
4.2
-8...-5
1 (<5 µA)
4.0
4.6
-6...-3
1 (<5 µA)
4.4
5.0
-5...+2
1 (<2 µA)
4.8
5.4
-2...+2
1.5 (<2 µA)
5.2
6.0
-5...+5
2.5 (<1 µA)
5.8
6.6
-3...+6
3 (<1 µA)
6.4
7.2
+3...+7
+3...+7
+8...+7
+3...+9
+3...+10
+3...+11
+3...+11
+3...+11
+3...+11
+3...+11
+3...+11
+3...+11
+4...+12
+4...+12
+4...+12
+4...+12
+4...+12
+4...+12
3.5 (<0.5 µA)
7.0
7.9
4 (<0.5 µA)
7.7
8.7
5 (<0.5 µA)
8.5
9.6
6 (<0.5 µA)
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
7
0
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
8
0
9
0
10
11
12
13
15
17
19
21
23
25
27
0
0
0
0
0
0
0
0
16
14
13
31
35
34
38
IZT = 2.5 mA
BZT52C39
BZT52C43
BZT52C47
BZT52C51
BZT52C56
BZT52C62
BZT52C68
BZT52C75
37
40
44
48
52
58
64
70
41
46
50
54
60
66
72
79
<100
<130
<150
<180
<180
<200
<250
<300
2
2
2
2
2
2
2
2
+4...+12
+4...+12
+4...+12
+4...+12
+4...+12
+4...+12
+4...+12
+4...+12
30 (< 2 µA)
33 (< 2 µA)
36 (< 2 µA)
39 (< 1 µA)
43 (< 1 µA)
47 (<0.2 µA)
52 (<0.2 µA)
57 (<0.2 µA)
12
11
10
9
8
8
7
6
1
2
Tested with pulses (20 ms) – Gemessen mit Impulsen (20 ms)
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad an jedem Anschluss)
2
http://www.diotec.com/
© Diotec Semiconductor AG
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