BZT52C62 [DIOTEC]

Surface mount Silicon Planar Zener Diodes; 表面贴装硅平面稳压二极管
BZT52C62
型号: BZT52C62
厂家: DIOTEC SEMICONDUCTOR    DIOTEC SEMICONDUCTOR
描述:

Surface mount Silicon Planar Zener Diodes
表面贴装硅平面稳压二极管

稳压二极管 齐纳二极管
文件: 总2页 (文件大小:94K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BZT52C2V4 ... BZT52C75 (500 mW)  
BZT52C2V4 ... BZT52C75 (500 mW)  
Surface mount Silicon Planar Zener Diodes  
Silizium-Planar-Zener-Dioden für die Oberflächenmontage  
Version 2010-09-09  
Maximum power dissipation  
Maximale Verlustleistung  
500 mW  
3...75 V  
SOD-123  
0.01 g  
2.7  
Nominal Z-voltage  
Nominale Z-Spannung  
0.6  
0.1  
Plastic case  
Kunststoffgehäuse  
Type  
Code  
Weight approx.  
Gewicht ca.  
3.8  
Standard packaging taped and reeled  
Dimensions - Maße [mm]  
Standard Lieferform gegurtet auf Rolle  
Standard Zener voltage tolerance is graded to the international E 24 (~ ±5%) standard.  
Other voltage tolerances and higher Zener voltages on request.  
Die Toleranz der Zener-Spannung ist in der Standard-Ausführung gestuft nach der internationalen  
Reihe E 24 (~ ±5%). Andere Toleranzen oder höhere Arbeitsspannungen auf Anfrage.  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
BZT52-series  
Power dissipation – Verlustleistung  
TA = 25°C  
Ptot  
500 mW 1)  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+150°C  
Thermal resistance junction to ambient air  
RthA  
< 300 K/W 1)  
Wärmewiderstand Sperrschicht – umgebende Luft  
Thermal resistance junction to terminal  
RthT  
< 240 K/W  
Wärmewiderstand Sperrschicht – Anschluss  
Zener voltages see table on next page – Zener-Spannungen siehe Tabelle auf der nächsten Seite  
Marking – Stempelung (alternative)  
BZT52C2V4 = MH, WX, 4C  
BZT52C2V7 = MJ, W1, 4D  
BZT52C3V0 = MK, W2, 4E  
BZT52C3V3 = MM, W3, 4F  
BZT52C3V6 = MN, W4, 4H  
BZT52C3V9 = MP, W5, 4J  
BZT52C4V3 = MR, W6, 4K  
BZT52C4V7 = MX, W7, 4M  
BZT52C5V1 = MY, W8, 4N  
BZT52C5V6 = MZ, W9, 4P  
BZT52C6V2 = NA, WA, 4R  
BZT52C6V8 = NB, WB, 4X  
BZT52C7V5 = NC, WC, 4Y  
BZT52C8V2 = ND, WD, 4Z  
BZT52C9V1 = NE, WE, 5A  
BZT52C10 = NE, WF, 5B  
BZT52C11 = NH, WG, 5C  
BZT52C12 = NJ, WH, 5D  
BZT52C13 = NK, WI, 5E  
BZT52C15 = NM, WJ, 5F  
BZT52C16 = NN, WK, 5H  
BZT52C18 = NP, WL, 5J  
BZT52C20 = NR, WM, 5K  
BZT52C22 = NX, WN, 5M  
BZT52C24 = NY, WO, 5N  
BZT52C27 = NZ, WP, 5P  
BZT52C30 = PA, WQ, 5R  
BZT52C33 = PB, WR, 5X  
BZT52C36 = PC, WS, 5Y  
BZT52C39 = PD, WT, 5Z  
BZT52C43 = WU, 6A  
BZT52C47 = WV, 6B  
BZT52C51 = WW, 6C  
BZT52C56 = 6D  
BZT52C62 = 6E  
BZT52C68 = 6F  
BZT52C75 = 6H  
1
Mounted on P.C. board with 25 mm2 copper pads at each terminal  
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad an jedem Anschluss)  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
BZT52C2V4 ... BZT52C75 (500 mW)  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Z-voltage range 1)  
Dynamic resistance  
Diff. Widerstand  
Temp. Coeffic.  
of Z-voltage  
…der Z-Spannung  
Reverse volt.  
Sperrspanng.  
IR = 100 nA  
Z-current 2)  
Z-Strom 2)  
TA = 25°C  
Z-Spanngs.-Bereich 1)  
IZT = 5mA  
VZ min [V]  
2.2  
VZ max [V]  
2.6  
IZK [mA]  
αVZ [10-4 /°C]  
-9...-6  
VR [V]  
IZmax [mA]  
ZZK [Ω]  
< 100  
BZT52C2V4  
BZT52C2V7  
BZT52C3V0  
BZT52C3V3  
BZT52C3V6  
BZT52C3V9  
BZT52C4V3  
BZT52C4V7  
BZT52C5V1  
BZT52C5V6  
BZT52C6V2  
BZT52C6V8  
BZT52C7V5  
BZT52C8V2  
BZT52C9V1  
BZT52C10  
BZT52C11  
BZT52C12  
BZT52C13  
BZT52C15  
BZT52C16  
BZT52C18  
BZT52C20  
BZT52C22  
BZT52C24  
BZT52C27  
BZT52C30  
BZT52C33  
BZT52C36  
5
1 (<120 µA)  
192  
172  
156  
143  
132  
119  
109  
100  
93  
83  
76  
69  
63  
57  
0
2.5  
2.9  
< 110  
< 120  
< 130  
< 130  
< 130  
< 130  
< 130  
< 130  
< 80  
< 50  
< 30  
< 30  
< 30  
< 30  
< 30  
< 30  
< 35  
< 35  
< 40  
< 40  
< 45  
< 50  
< 55  
< 60  
< 70  
< 80  
< 80  
< 90  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
-9...-6  
1 (<120 µA)  
2.8  
3.2  
-8...-5  
1 (<50 µA)  
3.1  
3.5  
-8...-5  
1 (<20 µA)  
3.4  
3.8  
-8...-5  
1 (<10 µA)  
3.6  
4.2  
-8...-5  
1 (<5 µA)  
4.0  
4.6  
-6...-3  
1 (<5 µA)  
4.4  
5.0  
-5...+2  
1 (<2 µA)  
4.8  
5.4  
-2...+2  
1.5 (<2 µA)  
5.2  
6.0  
-5...+5  
2.5 (<1 µA)  
5.8  
6.6  
-3...+6  
3 (<1 µA)  
6.4  
7.2  
+3...+7  
+3...+7  
+8...+7  
+3...+9  
+3...+10  
+3...+11  
+3...+11  
+3...+11  
+3...+11  
+3...+11  
+3...+11  
+3...+11  
+4...+12  
+4...+12  
+4...+12  
+4...+12  
+4...+12  
+4...+12  
3.5 (<0.5 µA)  
7.0  
7.9  
4 (<0.5 µA)  
7.7  
8.7  
5 (<0.5 µA)  
8.5  
9.6  
6 (<0.5 µA)  
9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
28.9  
32  
7
0
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
8
0
9
0
10  
11  
12  
13  
15  
17  
19  
21  
23  
25  
27  
0
0
0
0
0
0
0
0
16  
14  
13  
31  
35  
34  
38  
IZT = 2.5 mA  
BZT52C39  
BZT52C43  
BZT52C47  
BZT52C51  
BZT52C56  
BZT52C62  
BZT52C68  
BZT52C75  
37  
40  
44  
48  
52  
58  
64  
70  
41  
46  
50  
54  
60  
66  
72  
79  
<100  
<130  
<150  
<180  
<180  
<200  
<250  
<300  
2
2
2
2
2
2
2
2
+4...+12  
+4...+12  
+4...+12  
+4...+12  
+4...+12  
+4...+12  
+4...+12  
+4...+12  
30 (< 2 µA)  
33 (< 2 µA)  
36 (< 2 µA)  
39 (< 1 µA)  
43 (< 1 µA)  
47 (<0.2 µA)  
52 (<0.2 µA)  
57 (<0.2 µA)  
12  
11  
10  
9
8
8
7
6
1
2
Tested with pulses (20 ms) – Gemessen mit Impulsen (20 ms)  
Mounted on P.C. board with 25 mm2 copper pads at each terminal  
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad an jedem Anschluss)  
2
http://www.diotec.com/  
© Diotec Semiconductor AG  
 
 

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