ES2C [DIOTEC]
Superfast Switching Surface Mount Silicon Rectifier Diodes; 超快开关表面贴装硅整流二极管型号: | ES2C |
厂家: | DIOTEC SEMICONDUCTOR |
描述: | Superfast Switching Surface Mount Silicon Rectifier Diodes |
文件: | 总2页 (文件大小:117K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ES2A ... ES2D
ES2A ... ES2D
Superfast Switching Surface Mount Silicon Rectifier Diodes
Superschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage
Version 2011-10-17
Nominal current – Nennstrom
2 A
5.4± 0.5
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...200 V
Plastic case
~ SMB
1.1
0.15
Kunststoffgehäuse
~ DO-214AA
Weight approx. – Gewicht ca.
0.1 g
Type
Typ
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
5± 0.5
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
ES2A
ES2B
ES2C
ES2D
50
100
150
200
50
100
150
200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TT = 100°C
f > 15 Hz
TA = 25°C
TA = 25°C
IFAV
2 A
10 A 1)
50 A
Repetitive peak forward current
Periodischer Spitzenstrom
IFRM
IFSM
i2t
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
12.5 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
-50...+150°C
-50...+150°C
Tj
TS
1
Max. temperature of the terminals TT = 100°C – Max. Temperatur der Anschlüsse TT = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
ES2A ... ES2D
Characteristics
Kennwerte
Type
Typ
Reverse recovery time
Sperrverzugszeit
trr [ns] 1)
Forward voltage
Durchlass-Spannung
VF [V]
at / bei
IF [A]
ES2A...ES2D
< 20
< 0.90
2
Leakage current
Sperrstrom
Tj = 25°C
Tj = 100°C
VR = VRRM
VR = VRRM
IR
IR
< 10 µA
< 350 µA
Thermal resistance junction to ambient air
RthA
< 50 K/W 2)
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
RthL
< 15 K/W
Wärmewiderstand Sperrschicht – Anschluss
10
120
[%]
[A]
1
100
80
ES2A...D
60
0.1
40
10-2
IF
20
IFAV
0
Tj = 25°C
10-3
VF
[V]
0
TT
100
150
50
[°C]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
Rated forward current vs. temp. of the terminals
Zul. Richtstrom in Abh. v. d. Temp. der Terminals
1
2
IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A
Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
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