ES3G [DIOTEC]
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN;
| 型号： | ES3G |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN 超快速恢复二极管 IOT 光电二极管 |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES3A ... ES3J
ES3A ... ES3J
Superfast Efficient Surface Mount Silicon Rectifier Diodes
Superschnelle Hocheffizienz-Gleichrichterdioden für die Oberflächenmontage
Version 2013-12-11
7.9±0.2
Nominal current
Nennstrom
3 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...600 V
1.2
0.15
Plastic case
~ SMC
Kunststoffgehäuse
~ DO-214AB
Type
Typ
Weight approx. – Gewicht ca.
0.21 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
7.2±0.5
Dimensions - Maße [mm]
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
ES3A
ES3B
ES3C
ES3D
ES3F
ES3G
ES3J
50
100
150
200
300
400
600
50
100
150
200
300
400
600
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TT = 100°C
f > 15 Hz
TA = 25°C
TA = 25°C
IFAV
3 A
Repetitive peak forward current
Periodischer Spitzenstrom
IFRM
IFSM
i2t
15 A 1)
115/125 A
50 A2s
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
-50...+150°C
-50...+150°C
Tj
TS
1
Max. temperature of the terminals TT = 100°C – Max. Temperatur der Anschlüsse TT = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
ES3A ... ES3J
Characteristics
Kennwerte
Type
Typ
Reverse recovery time
Sperrverzugszeit
trr [ns] 1)
Forward voltage
Durchlass-Spannung
VF [V] at / bei IF [A]
ES3A...ES3D
ES3F...ES3G
ES3J
< 20
< 25
< 35
< 0.9
< 1.3
< 1.5
3
3
3
Leakage current
Sperrstrom
Tj = 25°C VR = VRRM
Tj = 100°C VR = VRRM
IR
IR
< 5 µA
< 500 µA
Thermal resistance junction to ambient air
RthA
< 40 K/W 2)
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
RthL
< 10 K/W
Wärmewiderstand Sperrschicht – Anschluss
10
120
[%]
ES3A...D
[A]
100
80
1
ES3F...G
ES3J
60
0.1
40
10-2
IF
20
IFAV
0
Tj = 25°C
10-3
VF
[V]
0
TT
100
150
50
[°C]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
Rated forward current vs. temp. of the terminals
Zul. Richtstrom in Abh. v. d. Temp. der Terminals
1
2
IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A
Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
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